US4897361A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Patterning method in the manufacture of miniaturized devices
Assignee: Nokia Bell Labs
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Filing: 1987-12-14
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Granted: 1990-01-30
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Expires: 2007-12-14
Abstract
Abstract When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.
Inventors
- 👤 Lloyd R. Harriott
- 👤 Morton B. Panish
- 👤 Henryk Temkin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:14
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/695; H10P50/20; H10P50/692; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/072; Y10S148/084; Y10S148/106; Y10S148/149
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
72 words
A method for making a device which comprises a patterned layer which here is designated as first layer, patterning of said first layer comprising a step of selective removal of first-layer material by exposure to a removal agent in the presence of a patterned second layer, said second layer bing deposited as a layer of semiconductor material on said first layer, and patterning of said second layer being by maskless ion-beam exposure.
Claim 2
Independent Claim
72 words
A method for making a device which comprises a patterned layer which here is designated as first layer, patterning of said first layer comprising a step of selective removal of first-layer material by exposure to a removal agent in the presence of a patterned second layer, said second layer bing deposited as a layer of semiconductor material on said first layer, and patterning of said second layer being by maskless ion-beam exposure.
Claim 3
Dependent Claim
21 words
The method of claim 1 in which the thickness of said second layer is less than or equal to 100 Angstroms.
Claim 4
Dependent Claim
17 words
The method of claim 1 in which the material of said first layer is a semiconductor material.
Claim 5
Dependent Claim
19 words
The method of claim 3 in which the material of said first layer is a Group III-V semiconductor material.
Claim 6
Dependent Claim
19 words
The method of claim 3 in which the material of said first layer is a Group IV semiconductor material.
Claim 7
Dependent Claim
16 words
The method of claim 1 in which said second layer is deposited as an epitaxial layer.
Claim 8
Dependent Claim
33 words
The method of claim 6, said method comprising an additional step of epitaxial layer deposition, said additional step being carried out without removal of second layer material after patterning of said first layer.
Claim 9
Dependent Claim
17 words
The method of claim 1, patterning of said second layer involving the use of a developing agent.
Claim 10
Dependent Claim
12 words
The method of claim 8 in which said developing agent is composition-selective.
Claim 11
Dependent Claim
12 words
The method of claim 8 in which said developing agent is damage-selective.
Claim 12
Dependent Claim
12 words
The method of claim 8 in which said developing agent is strain-selective.
Claim 13
Dependent Claim
17 words
The method of claim 8 in which said developing agent is the same as said removal agent.
Claim 14
Dependent Claim
16 words
The method of claim 1 in which selective removal of first-layer material is by dry etching.
Claim 15
Dependent Claim
15 words
The method of claim 1 in which said first layer is deposited under high-vacuum conditions.
Claim 16
Dependent Claim
15 words
The method of claim 1 in which said second layer is deposited under high-vacuum conditions.
Claim 17
Dependent Claim
16 words
The method of claim 1 in which selective removal of first-layer material is under high-vacuum conditions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-29 | 1993-07-31 | 1994-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-29 | 1997-07-31 | 1998-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-29 | 2001-07-31 | 2002-01-30 | $7700.00 | Window Closed / Lapsed |