US4773076A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Internal reflector interferometric semiconductor laser device
Assignee: Sharp Corp
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Filing: 1986-06-25
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Granted: 1988-09-20
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Expires: 2006-06-25
Abstract
Abstract A semiconductor laser device in which a double-heterostructure multi-layered crystal containing an active layer for laser oscillation is formed on a single crystal substrate having a channel composed of alternate channel portions with different widths and lengths, resulting in a plurality of alternate optical waveguides in said active layer corresponding to said alternate channel portions, said optical waveguides being optically coupled therebetween but being electrically separated from each other.
Inventors
- 👤 Saburo Yamamoto
- 👤 Osamu Yamamoto
- 👤 Hiroshi Hayashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:23
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/1021; H01S5/20; H01S5/24
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
96 words
In an internal reflector interferometric semiconductor laser device in which a double-heterostructure multilayered crystal containing an active layer for laser oscillation is formed on a single crystal substrate having a channel, the device wherein said channel is composed of a plurality of channel portions which are positioned in a row along the longitudinal direction and which are different in width and length from each other, resulting in a plurality of alternate optical waveguides in said active layer corresponding to said channel portions, said optical waveguides being optically coupled therebetween but being electrically separated from each other.
Claim 2
Dependent Claim
96 words
In an internal reflector interferometric semiconductor laser device in which a double-heterostructure multilayered crystal containing an active layer for laser oscillation is formed on a single crystal substrate having a channel, the device wherein said channel is composed of a plurality of channel portions which are positioned in a row along the longitudinal direction and which are different in width and length from each other, resulting in a plurality of alternate optical waveguides in said active layer corresponding to said channel portions, said optical waveguides being optically coupled therebetween but being electrically separated from each other.
Claim 3
Dependent Claim
44 words
An internal reflector interferometric semiconductor laser device according to claim 1, wherein the central axis of one of said channel portions is different from that of the adjacent channel portion, but the channel portion and the adjacent channel portion have a common boundary portion.
Claim 4
Dependent Claim
45 words
An internal reflector interferometric semiconductor laser device according to claim 1, wherein the central axes of said channel portions are in common and one of said channel portions which is narrower than the other channel portions is located in the central area of the channel.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |