Optical bistable semiconductor laser

Abstract

Abstract PURPOSE:To operate the titled laser stably by low currents to noises from the outside by coating an active layer just under a groove with a semiconductor layer interrupting current injection in the semiconductor laser, an electrode thereof is divided in the axial direction of a resonator by the groove. CONSTITUTION:Current block layers 14, 15, a buried layer 16 and a cap layer 17 are formed on a wafer, in which a buffer layer 11, an active layer 12 and a clad layer 13 are laminated on a substrate 10, in succession. Grooves 22, 23 for forming a mesa stripe containing the active layer have straight lines on the mesa stripe side and partially wide sections 24 and narrow sections 25 on the side separated from the mesa stripe. AuZn and the cap layer 17 just above the narrow sections 25 in the groove 22, 23 are removed in succession, and a groove 21 is shaped so that a P side electrode is divided into two in the direction of a resonator axis 30. A resonator is formed rectangularly to the mesa stripe so that the P side electrodes 26, 27 are divided by the groove 21. Since a section just under the groove 21 functions as a saturable absorption region, a saturable absorption section and a gain section are formed in the resonator, and optical bistable operation is realized.

Inventors

• 👤 Yuichi Odagiri
• 👤 小田切　雄一

Bibliographic Details