US4637129A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective area III-V growth and lift-off using tungsten patterning
Assignee: Nokia Bell Labs
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Filing: 1984-07-30
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Granted: 1987-01-20
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Expires: 2004-07-30
Abstract
Abstract A method of device fabrication using selective area regrowth Group III-V compound semiconductors with tungsten patterning is described.
Inventors
- 👤 Gustav E. Derkits, Jr.
- 👤 James P. Harbison
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:05
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/40; H10P76/403; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/60; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H10P50/28; H10P50/282; H10P50/283; H10P50/69; H10P50/691; H10P50/692; H10P50/693; H10P50/695; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05; Y10S148/105; Y10S148/169; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
79 words
A method of semiconductor device fabrication comprising the steps of: growing a Group III-V semiconductor structure; forming a metal layer on the surface of said Group III-V semiconductor structure, said growing and forming steps performed in the same vacuum system; pattern delineating said metal layer to expose a portion of the surface of said semiconductor structure; modifying the surface of said structure, said modifying step growing at least one Group III-V epitaxial layer; and removing said patterned metal layer.
Claim 2
Independent Claim
79 words
A method of semiconductor device fabrication comprising the steps of: growing a Group III-V semiconductor structure; forming a metal layer on the surface of said Group III-V semiconductor structure, said growing and forming steps performed in the same vacuum system; pattern delineating said metal layer to expose a portion of the surface of said semiconductor structure; modifying the surface of said structure, said modifying step growing at least one Group III-V epitaxial layer; and removing said patterned metal layer.
Claim 3
Dependent Claim
23 words
A method as recited in claim 1 in which said metal is selected from the group consisting of tungsten, molybdenum, tantalum and niobium.
Claim 4
Dependent Claim
14 words
A method as recited in claim 2 in which said metal layer comprises tungsten.
Claim 5
Dependent Claim
15 words
A method as recited in claim 3 in which said modifying step comprises ion implanting.
Claim 6
Dependent Claim
17 words
A method as recited in claim 3 in which said modifying step comprises plasma etching said surface.
Claim 7
Dependent Claim
16 words
A method as recited in claim 5 in which said etching is with a chlorine-containing plasma.
Claim 8
Dependent Claim
23 words
A method as recited in claim 3 in which said modifying grows at least one Group III-V epitaxial layer by molecular beam epitaxy.
Claim 9
Dependent Claim
14 words
A method as recited in claim 1 in which said removing is by lift-off.
Claim 10
Dependent Claim
16 words
A method as recited in claim 1 in which said lift-off uses a fluorine containing plasma.
Claim 11
Dependent Claim
17 words
A method as recited in claim 3 in which said pattern delineating step uses an inorganic resist.
Claim 12
Dependent Claim
17 words
A method as recited in claim 10 in which said resist comprises Ge x Se 1-x .
Claim 13
Dependent Claim
15 words
A method as recited in claim 1 comprising the further step of metallizing said surface.
Claim 14
Dependent Claim
23 words
A method as recited in claim 3 in which said forming step is performed at a temperature of at least 400 degrees C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-19 | 1990-07-21 | 1991-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-19 | 1994-07-21 | 1995-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-19 | 1998-07-21 | 1999-01-20 | $7700.00 | Window Closed / Lapsed |