US4498953A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching techniques
Assignee: Nokia Bell Labs
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Filing: 1983-07-27
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Granted: 1985-02-12
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Expires: 2003-07-27
Abstract
Abstract A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.
Inventors
- 👤 Joel M. Cook
- 👤 Vincent M. Donnelly
- 👤 Daniel L. Flamm
- 👤 Dale E. Ibbotson
- 👤 John A. Mucha
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:23
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/53; C04B41/5338; C04B41/5346; H; H10; H10P; H10P50/00; C09; C09K; C09K13/00; C09K13/04; C09K13/08; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4405; C23F; C23F1/00; C23F1/10; C23F1/12; H10P50/20; H10P50/24; H10P50/242; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S148/00; Y10S148/105
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
74 words
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride and said first region comprises a non-oxide tantalum composition wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma.
Claim 2
Dependent Claim
74 words
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride and said first region comprises a non-oxide tantalum composition wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma.
Claim 3
Dependent Claim
30 words
The process of claim 1 wherein said polyatomic halogen fluoride is chosen from the group consisting of BrF 5 , BrF 3 , ClF 3 , and IF 5 .
Claim 4
Dependent Claim
14 words
The process of claim 1 wherein said device comprises a hybrid, film integrated circuit.
Claim 5
Dependent Claim
24 words
The process of claim 1 wherein said tantalum composition comprises a member chosen from the group consisting of tantalum, tantalum nitride, and tantalum silicide.
Claim 6
Dependent Claim
13 words
The process of claim 1 wherein said second region comprises a tantalum oxide.
Claim 7
Dependent Claim
26 words
The process of claim 1 wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.
Claim 8
Dependent Claim
12 words
The process of claim 1 wherein said device is a semiconductor device.
Claim 9
Dependent Claim
72 words
A process for treating a body comprising a first region and a second region, said process comprising the step of subjecting said body to an etchant to etch said first region, characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein a substantial fraction of the thickness of said first region is removed.
Claim 10
Dependent Claim
72 words
A process for treating a body comprising a first region and a second region, said process comprising the step of subjecting said body to an etchant to etch said first region, characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein a substantial fraction of the thickness of said first region is removed.
Claim 11
Dependent Claim
30 words
The process of claim 8 wherein said polyatomic halogen fluoride is chosen from the group consisting of BrF 5 , BrF 3 , ClF 3 , and IF 5 .
Claim 12
Dependent Claim
19 words
The process of claim 8 wherein said first region comprises a silicon oxide and said second region comprises silicon.
Claim 13
Dependent Claim
20 words
The process of claim 8 wherein said body comprises a contaminated deposition apparatus where said first region is said contamination.
Claim 14
Dependent Claim
79 words
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma, and wherein a substantial fraction of the thickness of said first region is removed.
Claim 15
Dependent Claim
79 words
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma, and wherein a substantial fraction of the thickness of said first region is removed.
Claim 16
Dependent Claim
30 words
The process of claim 12 wherein said polyatomic halogen fluoride is chosen from the group consisting of BrF 5 , BrF 3 , ClF 3 , and IF 5 .
Claim 17
Dependent Claim
12 words
The process of claim 12 wherein said device is a semiconductor device.
Claim 18
Dependent Claim
14 words
The process of claim 12 wherein said device comprises a hybrid, film integrated circuit.
Claim 19
Dependent Claim
14 words
The process of claim 12 wherein said first region comprises a non-oxide tantalum composition.
Claim 20
Dependent Claim
24 words
The process of claim 16 wherein said tantalum composition comprises a member chosen from the group consisting of tantalum, tantalum nitride, and tantalum silicide.
Claim 21
Dependent Claim
13 words
The process of claim 12 wherein said second region comprises a tantalum oxide.
Claim 22
Dependent Claim
26 words
The process of claim 12 wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.
Claim 23
Dependent Claim
25 words
The process of claim 12 wherein said second region comprises a member chosen from the group consisting of a silicon oxide and a silicon nitride.
Claim 24
Dependent Claim
87 words
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.
Claim 25
Dependent Claim
87 words
A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.
Claim 26
Dependent Claim
25 words
The process of claim 21 wherein said second region comprises a member chosen from the group consisting of a silicon oxide and a silicon nitride.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-02-12 | 1988-08-13 | 1989-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-02-12 | 1992-08-13 | 1993-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-02-12 | 1996-08-13 | 1997-02-12 | $7700.00 | Window Closed / Lapsed |