US3669774A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature silicon etch
Assignee: RCA Corp
•
Filing: 1969-11-20
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Granted: 1972-06-13
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Expires: 1989-11-20
Abstract
Abstract A MECHANICALLY POLISHED SILICON WAFER IS ETECHED TO REMOVE SURFACE DAMAGED MATERIAL AND GIVE A SMOOTH SURFACE BY ETCHING AT A TEMPERATURE OF FROM ABOUT 800 TO 1050*C. IN A GAS MIXTURE CONSISTING OF A CARRIER GAS OF H2, HE OR A MIXTURE THEREOF, A SMALL CONCENTRATION OF A GAS REACTIVE WITH SIO2 SUCH AS HF, CIF3 OR BRF5 AND A SMALL CONCENTRATION OF A GAS REACTIVE SILICON SUCH AS HBR, HI, HCL, CL2, BR2, OR I2.
Inventors
- 👤 John Pickett Dismukes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:58
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; Y; Y10; Y10S; Y10S438/00; Y10S438/959
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-06-13 | 1975-12-13 | 1976-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-06-13 | 1979-12-13 | 1980-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-06-13 | 1983-12-13 | 1984-06-13 | $7700.00 | Window Closed / Lapsed |