US4648095A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: IKOMA TOSHIAKI A CITIZEN OF JAPAN
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Filing: 1984-07-24
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Granted: 1987-03-03
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Expires: 2004-07-24
Abstract
Abstract Solid phase reaction products are employed as reflecting planes of a semiconductor laser facing each other with an active layer in between, which significantly improve its performance and productivity.
Inventors
- 👤 Tamotsu Iwasaki
- 👤 Toshiaki Ikoma
- 👤 Tsugunori Okumura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:11
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/831; H10H20/8312; H10H20/01; H10H20/011; H10H20/018; H10H20/81; H10H20/811; H10H20/822; H10H20/824; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18305; H01S5/18308; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2072; H10H20/832
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
92 words
In a semiconductor laser comprising a III-V compound semiconductor and reflecting planes facing each other with an active layer of a heterostructure in between the facing reflecting planes, the improvement comprising: an interface, acting as at least one of said reflecting planes, and which is formed between a solid phase reaction product and said III-V compound semiconductor, said solid phase reaction product being of at least one element of said III-V compound semiconductor and a transition metal which, reacting with said element, produces a stoichiometric compound formed on said III-V compound semiconductor.
Claim 2
Dependent Claim
92 words
In a semiconductor laser comprising a III-V compound semiconductor and reflecting planes facing each other with an active layer of a heterostructure in between the facing reflecting planes, the improvement comprising: an interface, acting as at least one of said reflecting planes, and which is formed between a solid phase reaction product and said III-V compound semiconductor, said solid phase reaction product being of at least one element of said III-V compound semiconductor and a transition metal which, reacting with said element, produces a stoichiometric compound formed on said III-V compound semiconductor.
Claim 3
Dependent Claim
21 words
A semiconductor laser according to claim 1, wherein said III-V compound semiconductor of the heterostructure includes a plurality of epitaxial layers.
Claim 4
Dependent Claim
39 words
A semiconductor laser according to claim 2, wherein said heterostructure has an end surface, and said solid phase reaction product formed on said end surface of said heterostructure in a direction to cross a plane of said active layer.
Claim 5
Dependent Claim
37 words
A semiconductor laser according to claim 2, wherein said solid phase reaction product is formed on an outside plane of one of said plurality of epitaxial layers and is arranged substantially in parallel with said active layer.
Claim 6
Dependent Claim
34 words
A semiconductor laser according to claim 2, wherein said solid phase reaction product is formed on the outside of a substrate of said heterostructure and is arranged substantially in parallel with said active layer.
Claim 7
Dependent Claim
35 words
A semiconductor laser according to claim 2, wherein said transition metal is at least one selected from the group consisting of titanium, iron, cobalt, nickel, rhodium, palladium, tungsten, osmium, iridium, platinum, and lanthanide series metals.
Claim 8
Dependent Claim
23 words
A semiconductor laser according to claim 2, wherein said transition metal is one selected from the group consisting of platinum, palladium, and nickel.
Claim 9
Dependent Claim
13 words
A semiconductor laser according to claim 2, wherein said transition metal is platinum.
Claim 10
Dependent Claim
13 words
A semiconductor laser according to claim 2, wherein said transition metal is palladium.
Claim 11
Dependent Claim
13 words
A semiconductor laser according to claim 2, wherein said transition metal is nickel.
References Cited (Backward Citations)
US4563368A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-03-02 | 1990-09-01 | 1991-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-02 | 1994-09-01 | 1995-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-02 | 1998-09-01 | 1999-03-03 | $7700.00 | Window Closed / Lapsed |