US5595923A
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Method of forming a thin film transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-06-06
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Granted: 1997-01-21
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Expires: 2015-06-06
Abstract
Abstract A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorphous silicon, thereby selectively crystallizing the amorphous silicon film. The crystallized region is used as a crystalline silicon TFT which can be used in a peripheral driver circuit of an active matrix circuit. The region which remains amorphous is used as an amorphous silicon TFT which can be used in a pixel circuit. A relatively small amount of a catalyst element for promoting crystallization is added to an amorphous silicon film, and an annealing process is conducted at a temperature which is lower than the distortion temperature of a substrate, thereby crystallizing the amorphous silicon film. A gate insulating film, and a gate electrode are then formed, and an impurity is implanted in a self-alignment manner. A film containing a catalyst element for promoting crystallization is closely contacted with the impurity region, or a relatively large amount of a catalyst element is introduced into the impurity region by an ion implantation or the like. Then, an annealing process is conducted at a temperature which is lower than the distortion temperature of the substrate, thereby activating the doping impurity.
Inventors
- 👤 Hongyong Zhang
- 👤 Hideki Uochi
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
- 👤 Mutsuo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/8311; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/02; H10D84/03; H10D84/038; H10D84/85; H10D84/856; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/431; H10D86/471; H10D86/60; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; Y; Y10; Y10S; Y10S148/00; Y10S148/016
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
112 words
A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity into a portion of said semiconductor film with said gate electrode as a mask; forming a substance containing a catalyst element in contact with the portion of said semiconductor film; and annealing said semiconductor film at a second temperature lower than the first temperature to crystallize the portion of the semiconductor film and to activate said introduced impurity.
Claim 2
Independent Claim
112 words
A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity into a portion of said semiconductor film with said gate electrode as a mask; forming a substance containing a catalyst element in contact with the portion of said semiconductor film; and annealing said semiconductor film at a second temperature lower than the first temperature to crystallize the portion of the semiconductor film and to activate said introduced impurity.
Claim 3
Dependent Claim
37 words
The method of claim 1 wherein said adding step is carried out by forming a substance containing the catalyst element is contact with said semiconductor film, and thereafter thermally combining said catalyst element with said semiconductor film.
Claim 4
Dependent Claim
17 words
The method of claim 2 wherein said substance is a compound of said catalyst element and silicon.
Claim 5
Dependent Claim
43 words
The method of claim 1 wherein the semiconductor film into which the impurity is introduced includes a channel layer and source and drain regions, and a catalyst element concentration of the source and drain region is higher than that of the channel region.
Claim 6
Independent Claim
124 words
A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity and a catalyst element into a portion of said semiconductor film with said gate electrode as a mask to obtain the portion having a concentration of said catalyst element higher than an another portion of the semiconductor film; and annealing said semiconductor film at a second temperature lower than the first temperature to crystallize the portion of the semiconductor film using the catalyst element and to activate said introduced impurity.
Claim 7
Independent Claim
124 words
A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity and a catalyst element into a portion of said semiconductor film with said gate electrode as a mask to obtain the portion having a concentration of said catalyst element higher than an another portion of the semiconductor film; and annealing said semiconductor film at a second temperature lower than the first temperature to crystallize the portion of the semiconductor film using the catalyst element and to activate said introduced impurity.
Claim 8
Dependent Claim
37 words
The method of claim 5 wherein the semiconductor film includes a channel layer and source and drain regions, and a catalyst element concentration of the source and drain regions is higher than that of the channel region.
Claim 9
Independent Claim
111 words
A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing said semiconductor film at a temperature of T 1 to crystallize it using catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity and a catalyst element into a portion of said semiconductor film with said gate electrode as a mask; and annealing said semiconductor film at a temperature of T 2 which is less than the temperature of T 1 to crystallize the portion of the semiconductor film using the catalyst element and to activate said introduced impurity.
Claim 10
Independent Claim
111 words
A method of forming a transistor comprising: forming on a substrate a semiconductor film comprising silicon; adding a catalyst element for promoting crystallization, to said semiconductor film; annealing said semiconductor film at a temperature of T 1 to crystallize it using catalyst element; forming a gate electrode on said semiconductor film; introducing a doping impurity and a catalyst element into a portion of said semiconductor film with said gate electrode as a mask; and annealing said semiconductor film at a temperature of T 2 which is less than the temperature of T 1 to crystallize the portion of the semiconductor film using the catalyst element and to activate said introduced impurity.
Claim 11
Dependent Claim
12 words
The method of claim 7 wherein T 1 -T 2 >50° C.
Claim 12
Dependent Claim
37 words
The method of claim 7 wherein the semiconductor film includes a channel layer and source and drain regions, and a catalyst element concentration of the source and drain regions is higher than that of the channel region.
Claim 13
Independent Claim
141 words
A method of forming a semiconductor circuit comprising: selectively forming a substance containing a catalyst element in contact with a semiconductor film comprising silicon; annealing said semiconductor film at a first temperature to crystallize a portion of said semiconductor film in contact with said catalyst element; patterning the semiconductor film into at least one amorphous silicon region and at least one crystalline silicon region forming at least one gate electrode on each of said amorphous silicon region and said crystalline silicon region; introducing an impurity and a catalyst element into the crystalline silicon region with the gate electrode as a mask; and annealing the crystalline silicon region at a second temperature lower than the first temperature to crystallize a portion of the crystalline silicon region into which the impurity is introduced using the catalyst element and to activate the introduced impurity.
Claim 14
Independent Claim
141 words
A method of forming a semiconductor circuit comprising: selectively forming a substance containing a catalyst element in contact with a semiconductor film comprising silicon; annealing said semiconductor film at a first temperature to crystallize a portion of said semiconductor film in contact with said catalyst element; patterning the semiconductor film into at least one amorphous silicon region and at least one crystalline silicon region forming at least one gate electrode on each of said amorphous silicon region and said crystalline silicon region; introducing an impurity and a catalyst element into the crystalline silicon region with the gate electrode as a mask; and annealing the crystalline silicon region at a second temperature lower than the first temperature to crystallize a portion of the crystalline silicon region into which the impurity is introduced using the catalyst element and to activate the introduced impurity.
Claim 15
Dependent Claim
21 words
The method of claim 10 wherein said annealing step is carried out at the first temperature of 580° C. or lower.
Claim 16
Dependent Claim
37 words
The method of claim 10 wherein the semiconductor film includes a channel layer and source and drain regions, and a catalyst element concentration of the source and drain regions is higher than that of the channel region.
Claim 17
Independent Claim
132 words
A method of forming a semiconductor circuit comprising: introducing a catalyst element into a semiconductor film comprising silicon; annealing said semiconductor film at a first temperature to crystallize a portion of said semiconductor film into which said catalyst element is introduced; patterning the semiconductor film into at least one amorphous silicon region and at least one crystalline silicon region; forming at least one gate electrode on each of said amorphous silicon region and said crystalline silicon region; introducing an impurity and a catalytic element into the crystalline silicon region with the gate electrode as a mask; and annealing the crystalline silicon region at a second temperature lower than the first temperature to crystallize a portion of the crystalline silicon region into which the impurity is introduced and to activate the introduced impurity.
Claim 18
Independent Claim
132 words
A method of forming a semiconductor circuit comprising: introducing a catalyst element into a semiconductor film comprising silicon; annealing said semiconductor film at a first temperature to crystallize a portion of said semiconductor film into which said catalyst element is introduced; patterning the semiconductor film into at least one amorphous silicon region and at least one crystalline silicon region; forming at least one gate electrode on each of said amorphous silicon region and said crystalline silicon region; introducing an impurity and a catalytic element into the crystalline silicon region with the gate electrode as a mask; and annealing the crystalline silicon region at a second temperature lower than the first temperature to crystallize a portion of the crystalline silicon region into which the impurity is introduced and to activate the introduced impurity.
Claim 19
Dependent Claim
21 words
The method of claim 13 wherein said annealing step is carried out at the first temperature of 580° C. or lower.
Claim 20
Independent Claim
160 words
A method for forming a semiconductor device comprising the steps of: forming on a substrate having an insulating surface a semiconductor film comprising silicon; introducing a catalyst element into the semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode and an insulating film on the crystallized semiconductor film; introducing an impurity into the crystallized semiconductor film with the gate electrode as a mask to form a semiconductor film including a channel region and source and drain regions; doping with a catalyst element the source and drain regions into which the impurity is introduced; and annealing the semiconductor film into which the catalyst element is doped at a second temperature lower than the first temperature to crystallize the semiconductor film using the catalyst element and to activate the introduced impurity. wherein the catalyst element concentration of the source and drain regions is higher than that of the channel region,
Claim 21
Independent Claim
160 words
A method for forming a semiconductor device comprising the steps of: forming on a substrate having an insulating surface a semiconductor film comprising silicon; introducing a catalyst element into the semiconductor film; annealing the semiconductor film at a first temperature to crystallize it using the catalyst element; forming a gate electrode and an insulating film on the crystallized semiconductor film; introducing an impurity into the crystallized semiconductor film with the gate electrode as a mask to form a semiconductor film including a channel region and source and drain regions; doping with a catalyst element the source and drain regions into which the impurity is introduced; and annealing the semiconductor film into which the catalyst element is doped at a second temperature lower than the first temperature to crystallize the semiconductor film using the catalyst element and to activate the introduced impurity. wherein the catalyst element concentration of the source and drain regions is higher than that of the channel region,
Claim 22
Dependent Claim
11 words
The method of claim 15 wherein the catalyst element includes nickel.
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