US4466179A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for providing polysilicon thin films of improved uniformity
Assignee: Intersil Corp
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Filing: 1982-10-19
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Granted: 1984-08-21
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Expires: 2002-10-19
Abstract
Abstract A method for forming a polysilicon thin film semiconductor device precursor, and the precursor, are disclosed, wherein the deposited thin film layer is scanned with a continuous wave laser in a first direction, and scanned a second time in a direction different from that of the first direction. The cross-scanning reduces the anisotropy of the thin film produced by the first scanning and apparently induces larger grain size in the recrystallized polysilicon.
Inventors
- 👤 Alan J. Kasten
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 05:53
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P32/00; H10P32/30; H10P32/302
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
68 words
A method of forming a polysilicon thin film semiconductor device precursor, comprising: depositing a thin film of polysilicon on a substrate; irradiating an area of said film a first time by scanning with a laser beam in a first direction; and thereafter irradiating said area of said film a second time by scanning with a laser beam in a second direction biased with respect to said first direction.
Claim 2
Independent Claim
68 words
A method of forming a polysilicon thin film semiconductor device precursor, comprising: depositing a thin film of polysilicon on a substrate; irradiating an area of said film a first time by scanning with a laser beam in a first direction; and thereafter irradiating said area of said film a second time by scanning with a laser beam in a second direction biased with respect to said first direction.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein the angle of said bias is 90°.
Claim 4
Dependent Claim
40 words
The method of claim 1, wherein said bias is secured by rotation of the substrate bearing the deposited film between said first and second irradiations through an angle relative to the laser beam equal to the angle of said bias.
Claim 5
Dependent Claim
19 words
The method of claim 1, wherein the laser employed in irradiating said film is a continuous wave argon laser.
Claim 6
Dependent Claim
15 words
The method of claim 1, further comprising implanting the twice-scanned film with an appropriate dopant.
References Cited (Backward Citations)
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-21 | 1988-02-20 | 1988-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-21 | 1992-02-20 | 1992-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-21 | 1996-02-20 | 1996-08-21 | $7700.00 | Window Closed / Lapsed |