Manufacture of semiconductor thin film crystal layer

Abstract

Abstract PURPOSE:To allow a monocrystalline silicon thin film of good quality to be formed on an insulating film by a method wherein a metal silicide is previously filled and formed in an opening so as to control the loss of the silicon film thickness and evaporation of the silicon. CONSTITUTION:An insulating film 2 is formed on a monocrystalline silicon layer 1, and an opening 3 is formed in a portion of the film 2. Then, this structure is subjected to heat treatment in a nitrogen atmosphere to form a nickel silicide film 5 in the opening 3. Then, the film 4 is removed by aqua regia, heat treatment is performed, NiSi2 is epitaxially grown, a silicon thin film 6 is deposited, and a protective insulating film 7 is also deposited thereon. After that, by scanning of an electronic beam, monocrystalline growth of a silicon film is performed using NiSi2 of the opening 3 as a seed.

Inventors

• 👤 Kyoichi Suguro
• 👤 恭一 須黒

Bibliographic Details