US5608232A
Expired / Lapsed
US
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Semiconductor, semiconductor device, and method for fabricating the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1995-06-05
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Granted: 1997-03-04
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Expires: 2015-06-05
Abstract
Abstract Method or fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Hideki Uochi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/67; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6757; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
49 words
A thin-film transistor comprising: a silicon film containing at least one material of nickel, iron, cobalt, platinum and palladium; an insulating film provided on said silicon film; and a gate electrode provided on said insulating film; wherein concentration of said material does not exceed 1×10 19 atom/cm 3 .
Claim 2
Dependent Claim
49 words
A thin-film transistor comprising: a silicon film containing at least one material of nickel, iron, cobalt, platinum and palladium; an insulating film provided on said silicon film; and a gate electrode provided on said insulating film; wherein concentration of said material does not exceed 1×10 19 atom/cm 3 .
Claim 3
Dependent Claim
18 words
The transistor of claim 1 wherein said concentration of said material is 1×10 3 atoms/cm 3 or more.
Claim 4
Dependent Claim
20 words
The transistor of claim 1 wherein said silicon film contains 1×10 15 atoms/cm 3 to 5 atomic % of hydrogen.
Claim 5
Dependent Claim
48 words
A thin-film transistor comprising: a source and a drain; wherein at least one of said source and said drain consists of a semiconductor containing at least one material of nickel, iron, cobalt, platinum and palladium; and concentration of said material does not exceed 1×10 19 atoms/cm 3 .
Claim 6
Dependent Claim
48 words
A thin-film transistor comprising: a source and a drain; wherein at least one of said source and said drain consists of a semiconductor containing at least one material of nickel, iron, cobalt, platinum and palladium; and concentration of said material does not exceed 1×10 19 atoms/cm 3 .
Claim 7
Dependent Claim
18 words
The transistor of claim 4 wherein said concentration of said material is 1×10 15 atoms/cm 3 or more.
Claim 8
Dependent Claim
19 words
The transistor of claim 4 wherein said silicon film contains 1×10 15 atoms/cm 3 to 5 atomic % hydrogen.
Claim 9
Dependent Claim
36 words
A semiconductor comprising: a crystalline silicon film; wherein said silicon film contains at least one material of nickel, iron, cobalt, platinum and palladium; and concentration of said material does not exceed 1×10 19 atoms/cm 3 .
Claim 10
Dependent Claim
36 words
A semiconductor comprising: a crystalline silicon film; wherein said silicon film contains at least one material of nickel, iron, cobalt, platinum and palladium; and concentration of said material does not exceed 1×10 19 atoms/cm 3 .
Claim 11
Dependent Claim
18 words
The transistor of claim 7 wherein said concentration of said material is 1×10 15 atoms/cm 3 or more.
Claim 12
Dependent Claim
20 words
The transistor of claim 7 wherein said silicon film contains 1×10 15 atoms/cm 3 to 5 atomic % of hydrogen.
Claim 13
Dependent Claim
21 words
The semiconductor of claim 7 wherein the semiconductor contains 1×10 19 atoms/cm 3 or less each of carbon, oxygen, and nitrogen.
Claim 14
Dependent Claim
18 words
The semiconductor of claim 7 wherein the crystallization of the silicon film is confirmed by Raman scattering spectroscopy.
Claim 15
Dependent Claim
14 words
The semiconductor of claim 7 wherein the semiconductor is formed on an insulating surface.
Claim 16
Dependent Claim
63 words
A thin-film transistor comprising: a silicon film containing at least one material of nickel, iron, cobalt, platinum and palladium; an insulating film provided on said silicon film; a gate electrode provided on said insulating film; wherein said material is introduced into said silicon film for crystallization thereof and removed such that concentration of said material do not exceed 1×10 19 atoms/cm 3 .
Claim 17
Dependent Claim
63 words
A thin-film transistor comprising: a silicon film containing at least one material of nickel, iron, cobalt, platinum and palladium; an insulating film provided on said silicon film; a gate electrode provided on said insulating film; wherein said material is introduced into said silicon film for crystallization thereof and removed such that concentration of said material do not exceed 1×10 19 atoms/cm 3 .
Claim 18
Dependent Claim
22 words
The transistor of the claim 13 wherein said removal is performed by annealing said silicon film in an atmosphere containing chlorine atoms.
Claim 19
Dependent Claim
30 words
The transistor of the claim 13 wherein said removal is performed by dissolving a metal silicide in hydrofluoric acid or hydrochloric acid, said metal silicide being formed by said introducing.
Claim 20
Dependent Claim
64 words
A thin-film transistor comprising: a source and a drain; wherein at least one of said source and said drain consists of a semiconductor film containing at least one material of nickel, iron, cobalt, platinum and palladium; and said material is introduced into said silicon film for crystallization thereof and removed such that concentration of said material do not exceed 1×10 19 atoms/cm 3 .
Claim 21
Dependent Claim
64 words
A thin-film transistor comprising: a source and a drain; wherein at least one of said source and said drain consists of a semiconductor film containing at least one material of nickel, iron, cobalt, platinum and palladium; and said material is introduced into said silicon film for crystallization thereof and removed such that concentration of said material do not exceed 1×10 19 atoms/cm 3 .
Claim 22
Dependent Claim
22 words
The transistor of the claim 16 wherein said removal is performed by annealing said silicon film in an atmosphere containing chlorine atoms.
Claim 23
Dependent Claim
30 words
The transistor of the claim 16 wherein said removal is performed by dissolving a metal silicide in hydrofluoric acid or hydrochloric acid, said metal silicide being formed by said introducing.
Claim 24
Dependent Claim
49 words
A semiconductor comprising: a crystalline silicon film; wherein said silicon film contains at least one material of nickel, iron, cobalt, platinum; and said material is introduced into said silicon film for crystallization thereof and removed such that concentration of said material do not exceed 1×10 19 atoms/cm 3 .
Claim 25
Dependent Claim
49 words
A semiconductor comprising: a crystalline silicon film; wherein said silicon film contains at least one material of nickel, iron, cobalt, platinum; and said material is introduced into said silicon film for crystallization thereof and removed such that concentration of said material do not exceed 1×10 19 atoms/cm 3 .
Claim 26
Dependent Claim
22 words
The transistor of the claim 19 wherein said removal is performed by annealing said silicon film in an atmosphere containing chlorine atoms.
Claim 27
Dependent Claim
30 words
The transistor of the claim 19 wherein said removal is performed by dissolving a metal silicide in hydrofluoric acid or hydrochloric acid, said metal silicide being formed by said introducing.
References Cited (Backward Citations)
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