US5481121A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having improved crystal orientation
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-05-25
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Granted: 1996-01-02
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Expires: 2014-05-25
Abstract
Abstract Nickel is introduced to a peripheral circuit section and a picture element section on an amorphous silicon film to crystallize them. After forming gate electrodes and others, a source, drain and channel are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film crystal-grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the crystalline silicon film crystal-grown in the direction vertical to the flow of carriers can be obtained.
Inventors
- 👤 Hongyong Zhang
- 👤 Toru Takayama
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3816; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D86/421; H10D86/425; H10D86/60; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3466; H10P14/3804; H10P14/3806; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
74 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a part of the plurality of thin film transistors has a crystalline silicon film having a crystal growth direction approximately parallel to a surface of the substrate and the other part of the plurality of thin film transistors has a crystalline silicon film having a crystal growth direction approximately vertical to the surface of the substrate.
Claim 2
Dependent Claim
74 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a part of the plurality of thin film transistors has a crystalline silicon film having a crystal growth direction approximately parallel to a surface of the substrate and the other part of the plurality of thin film transistors has a crystalline silicon film having a crystal growth direction approximately vertical to the surface of the substrate.
Claim 3
Dependent Claim
130 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a part of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display and the other part of the plurality of thin film transistors is provided as a picture element section of the active matrix type liquid crystal display, and the thin film transistors provided as the peripheral circuit section have a crystalline silicon film having a crystal growth direction in a direction parallel to a surface of the substrate and the thin film transistors provided as the picture element section have a crystalline silicon film having a crystal growth direction in a direction vertical to the surface of the substrate.
Claim 4
Dependent Claim
130 words
A semiconductor device, comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein a part of the plurality of thin film transistors is provided as a peripheral circuit section of an active matrix type liquid crystal display and the other part of the plurality of thin film transistors is provided as a picture element section of the active matrix type liquid crystal display, and the thin film transistors provided as the peripheral circuit section have a crystalline silicon film having a crystal growth direction in a direction parallel to a surface of the substrate and the thin film transistors provided as the picture element section have a crystalline silicon film having a crystal growth direction in a direction vertical to the surface of the substrate.
Claim 5
Dependent Claim
107 words
An active matrix type liquid crystal display, comprising: a picture element section having a plurality of picture element electrodes; and driving circuit means for driving each of the picture element electrodes, wherein the picture element section and the driving circuit means are composed of thin film transistors each having a substrate, and the thin film transistors composing the picture element section have a crystalline silicon film having a crystal growth direction approximately vertical to the surface of the substrate and the thin film transistors composing the driving circuit means have a crystalline silicon film having a crystal growth direction approximately parallel to the surface of the substrate.
Claim 6
Dependent Claim
107 words
An active matrix type liquid crystal display, comprising: a picture element section having a plurality of picture element electrodes; and driving circuit means for driving each of the picture element electrodes, wherein the picture element section and the driving circuit means are composed of thin film transistors each having a substrate, and the thin film transistors composing the picture element section have a crystalline silicon film having a crystal growth direction approximately vertical to the surface of the substrate and the thin film transistors composing the driving circuit means have a crystalline silicon film having a crystal growth direction approximately parallel to the surface of the substrate.
Claim 7
Dependent Claim
46 words
A semiconductor device comprising: a substrate; and a crystalline silicon film which is formed on the substrate and has a first region having a crystal growth direction approximately parallel to the substrate and a second region having a crystal growth direction approximately normal to the substrate.
Claim 8
Dependent Claim
46 words
A semiconductor device comprising: a substrate; and a crystalline silicon film which is formed on the substrate and has a first region having a crystal growth direction approximately parallel to the substrate and a second region having a crystal growth direction approximately normal to the substrate.
Claim 9
Dependent Claim
82 words
An active matrix type liquid crystal display comprising: a substrate; a plurality of picture element electrodes each having a crystalline silicon region having a crystal growth direction approximately vertical to the substrate; and a plurality of driving circuit means for driving the picture element electrodes, the plurality of driving circuit means each having a crystalline silicon region having a crystal growth direction approximately parallel to the substrate, wherein the picture element electrodes and the driving circuit means are formed on the substrate.
Claim 10
Dependent Claim
82 words
An active matrix type liquid crystal display comprising: a substrate; a plurality of picture element electrodes each having a crystalline silicon region having a crystal growth direction approximately vertical to the substrate; and a plurality of driving circuit means for driving the picture element electrodes, the plurality of driving circuit means each having a crystalline silicon region having a crystal growth direction approximately parallel to the substrate, wherein the picture element electrodes and the driving circuit means are formed on the substrate.
Claim 11
Dependent Claim
67 words
A semiconductor device comprising: a substrate; at least one first thin film transistor which is formed on the substrate and has a first crystalline silicon region having a crystal growth direction approximately normal to the substrate; and at least one second thin film transistor which is formed on the substrate and has a second crystalline silicon region having a crystal growth direction approximately parallel to the substrate.
Claim 12
Dependent Claim
67 words
A semiconductor device comprising: a substrate; at least one first thin film transistor which is formed on the substrate and has a first crystalline silicon region having a crystal growth direction approximately normal to the substrate; and at least one second thin film transistor which is formed on the substrate and has a second crystalline silicon region having a crystal growth direction approximately parallel to the substrate.
Claim 13
Dependent Claim
80 words
A semiconductor device comprising: a plurality of thin film transistors each having a crystalline silicon region at least one first thin film transistor being formed to differ a crystal growth direction of the crystalline silicon region from a carrier moving direction of the first thin film transistor and at least one second thin film transistor being formed to approximately coincide a crystal growth direction of the crystalline silicon region with a carrier moving direction of the second thin film transistor.
Claim 14
Dependent Claim
80 words
A semiconductor device comprising: a plurality of thin film transistors each having a crystalline silicon region at least one first thin film transistor being formed to differ a crystal growth direction of the crystalline silicon region from a carrier moving direction of the first thin film transistor and at least one second thin film transistor being formed to approximately coincide a crystal growth direction of the crystalline silicon region with a carrier moving direction of the second thin film transistor.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-01-01 | 1999-07-03 | 2000-01-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-01 | 2003-07-03 | 2004-01-02 | $3760.00 | Window Closed / Lapsed |
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