Manufacturing method of thin film transistor

Claim 1

A method of manufacturing a thin film transistor having a polycrystalline silicon film wherein an ohmic contact part and a channel part have conductivity opposite to each other, comprising: laminating, on a substrate in the region corresponding to the ohmic contact part, an intrinsic amorphous silicon layer and a first conductive amorphous silicon layer to form a first laminated body; laminating, on the substrate in the region corresponding to the channel part, an intrinsic amorphous silicon layer and a second conductive amorphous silicon layer to form a second laminated body; said second conductive amorphous silicon layer having a conductivity opposite to that of said first conductive amorphous silicon layer; and annealing said first and said second laminated body, thereby forming said polycrystalline silicon film.

Claim 2

A method of manufacturing a thin film transistor having a polycrystalline silicon film wherein an ohmic contact part and a channel part have conductivity opposite to each other, comprising: laminating, on a substrate in the region corresponding to the ohmic contact part, an intrinsic amorphous silicon layer and a first conductive amorphous silicon layer to form a first laminated body; laminating, on the substrate in the region corresponding to the channel part, an intrinsic amorphous silicon layer and a second conductive amorphous silicon layer to form a second laminated body; said second conductive amorphous silicon layer having a conductivity opposite to that of said first conductive amorphous silicon layer; and annealing said first and said second laminated body, thereby forming said polycrystalline silicon film.

Claim 3

A method of manufacturing a thin film transistor having a polycrystalline silicon film wherein an ohmic contact part and a channel part have conductivity opposite to each other, comprising: laminating, on a substrate in the region corresponding to the ohmic contact part, an intrinsic amorphous silicon layer and a first conductive amorphous silicon layer to form a first laminated body; laminating, on the substrate in the region corresponding to the channel part, an intrinsic amorphous silicon layer and a second conductive amorphous silicon layer to form a second laminated body; said second conductive amorphous silicon layer having a conductivity opposite to that of said first conductive amorphous silicon layer; annealing said first and said second laminated body, thereby obtaining a polycrystalline silicon film; forming an insulating film on said polycrystalline silicon film; forming a contact hole in said insulating film; forming a gate electrode over said channel part; and forming a drain electrode and a source electrode over said ohmic contact part.

Claim 4

A method of manufacturing a thin film transistor having a polycrystalline silicon film wherein an ohmic contact part and a channel part have conductivity opposite to each other, comprising: laminating, on a substrate in the region corresponding to the ohmic contact part, an intrinsic amorphous silicon layer and a first conductive amorphous silicon layer to form a first laminated body; laminating, on the substrate in the region corresponding to the channel part, an intrinsic amorphous silicon layer and a second conductive amorphous silicon layer to form a second laminated body; said second conductive amorphous silicon layer having a conductivity opposite to that of said first conductive amorphous silicon layer; annealing said first and said second laminated body, thereby obtaining a polycrystalline silicon film; forming an insulating film on said polycrystalline silicon film; forming a contact hole in said insulating film; forming a gate electrode over said channel part; and forming a drain electrode and a source electrode over said ohmic contact part.