EP0390607A2
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EP
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Process for forming crystalline semiconductor film
Assignee: Canon Inc
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Filing: 1990-03-30
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Granted: —
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Expires: 2010-03-30
Abstract
Abstract A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material comprises implanting ions of an element constituting the amorpus semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.
Inventors
- 👤 Nobuhiko Sato
- 👤 Takao Yonehara
- 👤 Hideya Kumomi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 16:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
86 words
A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.
Claim 2
Dependent Claim
86 words
A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.
Claim 3
Dependent Claim
117 words
A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film such that a fine region having a lower degree of implantation damages than that of the other remaining regions at a position near the boundary between the amorphous semiconductor film and the base material, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby preferentially generating only a single crystal-nucleus from the fine region, and making a crystal grow at the crystal nucleus as growth point.
Claim 4
Dependent Claim
117 words
A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film such that a fine region having a lower degree of implantation damages than that of the other remaining regions at a position near the boundary between the amorphous semiconductor film and the base material, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby preferentially generating only a single crystal-nucleus from the fine region, and making a crystal grow at the crystal nucleus as growth point.
Claim 5
Dependent Claim
40 words
A process according to Claim 2, wherein the amorphous semiconductor film is a semiconductor film having an amorphous structure formed during the deposition of the film or a semiconductor film made amorphous by ion implantation of a polycrystalline semiconductor film.
Claim 6
Dependent Claim
46 words
A process according to Claim 2, wherein the amorphous semiconductor film is a semiconductor film made amorphous from a polycrystalline semiconductor film by ion implantation such that the projection range of ion implantation reaches positions near the middle of film thickness of the polycrystalline semiconductor film.
Claim 7
Dependent Claim
72 words
A process according to Claim 2, wherein the fine region is formed by effecting ion implanation into the amorphous semiconductor film under provision of a resist-mask on the amorphous semiconductor film so that the projection range of ion implantation reaches positions near the boundary of the amorphous semiconductor film to the base material, thereby making the degree of ion implantation damages in the fine region lower than in the other ion-implanted region.
Claim 8
Dependent Claim
113 words
A process according to Claim 3, wherein the fine region is formed by ion implantation into the polycrystalline semiconductor film under provision of a resist mask in the region corresponding to the fine region on the polycrystalline semiconductor film, the resist mask being capable of shortening the projection range, so that the projection range reaches positions near the boundary of the polycrystalline semiconductor film to the base material in other regions than the resist-masked region, thereby effecting by one run the conversion of the polycrystalline semiconductor film to amorphous state and the formation of the fine region lower in a degree of ion implantation damages than in the region except the masked region.
Claim 9
Dependent Claim
23 words
A process according to any one of Claims 1 to 6, wherein a plurality of the fine regions are formed at desired intervals.
Claim 10
Dependent Claim
100 words
A process for forming a crystalline semiconductor film, which comprises implanting ions of the material constituting the semiconductor film into the semiconductor film provided on a base material, thereby forming regions having different degrees of ion implantation damages at the boundary of the semiconductor film to the base material, and heat treating the semiconductor film at a temperature not higher than the melting point of the semiconductor film, thereby forming a crystal grown preferentially from only a single crystal-nucleus in a fine region having a low degree of ion implantation damages and crystallizing the semiconductor film through solid phase growth.
Claim 11
Dependent Claim
100 words
A process for forming a crystalline semiconductor film, which comprises implanting ions of the material constituting the semiconductor film into the semiconductor film provided on a base material, thereby forming regions having different degrees of ion implantation damages at the boundary of the semiconductor film to the base material, and heat treating the semiconductor film at a temperature not higher than the melting point of the semiconductor film, thereby forming a crystal grown preferentially from only a single crystal-nucleus in a fine region having a low degree of ion implantation damages and crystallizing the semiconductor film through solid phase growth.
Claim 12
Dependent Claim
14 words
A process according to Claim 8, wherein the semiconductor film is an amorphous film.
Claim 13
Dependent Claim
14 words
A process according to Claim 9, wherein the semiconductor film is a polycrystalline film.
Claim 14
Dependent Claim
27 words
A process according to any one of Claims 1, 2 and 8, wherein the heat treatment is carried out in a plurality of run at different temperatures.
Claim 15
Dependent Claim
29 words
A process according to any one of Claims 1, 2 and 8, wherein the fine region is a circle area having a diameter of not more than 5 µm.
Claim 16
Dependent Claim
125 words
A process for forming a crystalline semiconductor film, which comprises providing a region fine enough to form only a single crystal-nucleus by heat treatment at a desired position of an amorphous semiconductor film provided on a base material, implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except the region, then carrying out a first heat treatment of the amorphous semiconductor film at a first temperature not higher than the melting point of the amorphous semiconductor film, thereby forming only a single crystal-nucleus in the fine region, and carrying out a second heat treatment of the amorphous semiconductor film at a second temperature lower than the first temperature, thereby making a crystal grow at the nucleus as growth point.
Claim 17
Dependent Claim
125 words
A process for forming a crystalline semiconductor film, which comprises providing a region fine enough to form only a single crystal-nucleus by heat treatment at a desired position of an amorphous semiconductor film provided on a base material, implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except the region, then carrying out a first heat treatment of the amorphous semiconductor film at a first temperature not higher than the melting point of the amorphous semiconductor film, thereby forming only a single crystal-nucleus in the fine region, and carrying out a second heat treatment of the amorphous semiconductor film at a second temperature lower than the first temperature, thereby making a crystal grow at the nucleus as growth point.
Claim 18
Dependent Claim
48 words
A process according to Claim 13, wherein the amorphous semiconductor film is an amorphous semiconductor film formed by implanting ions of an element constituting the polycrystalline semiconductor film into the polycrystalline semiconductor film thereby making the polycrystalline semiconductor film amorphous or by deposition by a gas phase process.
Claim 19
Dependent Claim
23 words
A process according to Claim 13, wherein the fine region is a circle area having a diameter of not more than 5 µm.
Claim 20
Dependent Claim
20 words
A process according to any one of Claims 1 to 15, wherein the amorphous semiconductor film is composed of silicon.
References Cited (Backward Citations)
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