US5696388A
Expired / Lapsed
US
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Thin film transistors for the peripheral circuit portion and the pixel portion
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-11-12
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Granted: 1997-12-09
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Expires: 2016-11-12
Abstract
Abstract In an active matrix type liquid-crystal display device, in a peripheral circuit portion, there is arranged a TFT having a high mobility and capable of allowing a large amount of on-state current to flow. In a pixel portion, there is arranged a TFT having a small off-state current. These TFTs having different characteristics are constituted by using crystalline silicon film whose crystal has grown in a direction parallel with a substrate. That is, an angle formed between a crystal growing direction and a carrier moving direction are made different from each other, thereby to control a resistance imposed on the carriers when moving to determine the characteristics of the TFT. For example, when the crystal growing direction coincides with the carrier moving direction, high mobility can be given to the carriers. Further, when the crystal growing direction is arranged perpendicular to the carrier moving direction, the off-state current can be lowered.
Inventors
- 👤 Fumiaki Funada
- 👤 Tatsuo Morita
- 👤 Hirohisa Tanaka
- 👤 Hongyong Zhang
- 👤 Toru Takayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:06
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6733; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; Y; Y10; Y10S; Y10S148/00; Y10S148/016; Y10S438/00; Y10S438/982
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
127 words
A semiconductor device comprising: a substrate: at least a first thin film transistor and a second thin film transistor provided on said substrate, each of said thin film transistors comprising a crystalline silicon layer in which crystals grew in a direction to form crystal grain boundaries parallel with a surface of said substrate and extending through said crystalline silicon layer; wherein the crystal growth direction of the silicon layer in said first thin film transistor makes a first angle with respect to a direction along which carriers flow therethrough, and the crystal growth direction of the silicon layer in said second thin film transistor makes a second angle with respect to a direction along which carriers flow therethrough, said second angle being different from said first angle.
Claim 2
Dependent Claim
127 words
A semiconductor device comprising: a substrate: at least a first thin film transistor and a second thin film transistor provided on said substrate, each of said thin film transistors comprising a crystalline silicon layer in which crystals grew in a direction to form crystal grain boundaries parallel with a surface of said substrate and extending through said crystalline silicon layer; wherein the crystal growth direction of the silicon layer in said first thin film transistor makes a first angle with respect to a direction along which carriers flow therethrough, and the crystal growth direction of the silicon layer in said second thin film transistor makes a second angle with respect to a direction along which carriers flow therethrough, said second angle being different from said first angle.
Claim 3
Dependent Claim
172 words
A semiconductor device comprising: a substrate having a peripheral circuit portion and a pixel portion for an active matrix type liquid crystal device; a first plurality of thin film transistors provided in the peripheral circuit portion of the substrate; and a second plurality of thin film transistors provided in the pixel portion of the substrate, each of said first and second plurality of thin film transistors comprising a crystalline silicon layer in which crystals grew in a direction to form crystal grain boundaries parallel with a surface of said substrate and extending through said crystalline silicon layer, wherein the crystal growth direction of the silicon layer in each of said first plurality of thin film transistors makes a first angle with respect to a direction along which carriers flow therethrough, and the crystal growth direction of the silicon layer in each of said second plurality of thin film transistors makes a second angle with respect to a direction along which carriers flow therethrough, said second angle being different from said first angle.
Claim 4
Dependent Claim
172 words
A semiconductor device comprising: a substrate having a peripheral circuit portion and a pixel portion for an active matrix type liquid crystal device; a first plurality of thin film transistors provided in the peripheral circuit portion of the substrate; and a second plurality of thin film transistors provided in the pixel portion of the substrate, each of said first and second plurality of thin film transistors comprising a crystalline silicon layer in which crystals grew in a direction to form crystal grain boundaries parallel with a surface of said substrate and extending through said crystalline silicon layer, wherein the crystal growth direction of the silicon layer in each of said first plurality of thin film transistors makes a first angle with respect to a direction along which carriers flow therethrough, and the crystal growth direction of the silicon layer in each of said second plurality of thin film transistors makes a second angle with respect to a direction along which carriers flow therethrough, said second angle being different from said first angle.
Claim 5
Dependent Claim
22 words
The semiconductor device of claim 1 or 2 wherein said first angle is approximately 0° while said second angle is approximately 90°.
Claim 6
Dependent Claim
39 words
The semiconductor device of claim 1 wherein the silicon layer in each of said first thin film transistor and said second thin film transistor contains a metal element therein, which is capable of promoting crystallization of an amorphous silicon.
Claim 7
Dependent Claim
37 words
The semiconductor device of claim 2 wherein the silicon layer in each of said first and second plurality of thin film transistors contains a metal element therein, which is capable of promoting crystallization of an amorphous silicon.
Claim 8
Independent Claim
148 words
A device comprising at least first and second plurality of thin film semiconductor devices formed on a substrate, each of said first plurality of thin film semiconductor devices comprising silicon crystals having a needle or column shape which extend in parallel with a surface of said substrate, making a first angle with respect to a carrier flow direction along which carriers flow therethrough; each of said second plurality of thin film semiconductor devices comprising silicon crystals having a needle or column shape which extend in parallel with the surface of said substrate, making a second angle with respect to a carrier flow direction along which carriers flow therethrough, wherein said first angle is different from said second angle in order that an electrical characteristic of said first plurality of thin film semiconductor devices is different from an electrical characteristic of said second plurality of thin film semiconductor devices.
Claim 9
Independent Claim
148 words
A device comprising at least first and second plurality of thin film semiconductor devices formed on a substrate, each of said first plurality of thin film semiconductor devices comprising silicon crystals having a needle or column shape which extend in parallel with a surface of said substrate, making a first angle with respect to a carrier flow direction along which carriers flow therethrough; each of said second plurality of thin film semiconductor devices comprising silicon crystals having a needle or column shape which extend in parallel with the surface of said substrate, making a second angle with respect to a carrier flow direction along which carriers flow therethrough, wherein said first angle is different from said second angle in order that an electrical characteristic of said first plurality of thin film semiconductor devices is different from an electrical characteristic of said second plurality of thin film semiconductor devices.
Claim 10
Dependent Claim
50 words
The device of claim 6 wherein said first plurality of thin film semiconductor devices are provided in a peripheral circuit region of an active matrix liquid crystal device while said second plurality of thin film semiconductor devices are provided in a pixel region of the active matrix liquid crystal device.
Claim 11
Dependent Claim
20 words
The semiconductor device of claim 7 wherein said first angle is approximately 0° while said second angle is approximately 90°.
Claim 12
Dependent Claim
36 words
The semiconductor device of claim 6 wherein the silicon crystals in each of said first and second plurality of thin film transistors contains a metal element, which is capable of promoting crystallization of an amorphous silicon.
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| 3.5 Years (Year 4) | 2000-12-08 | 2001-06-09 | 2001-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-08 | 2005-06-09 | 2005-12-09 | $3760.00 | Window Closed / Lapsed |
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