US5696386A
Expired / Lapsed
US
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Semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-02-09
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Granted: 1997-12-09
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Expires: 2014-02-09
Abstract
Abstract A method relates to fabrication of semiconductor devices such as TFTs on an insulating substrate. After forming a coating consisting mainly of aluminum nitride, semiconductor devices such as TFTs or semiconductor integrated circuits comprising said semiconductor devices are built directly or indirectly on the coating to form e.g. an active matrix liquid crystal display. A coating consisting mainly of silicon oxide may be formed on the coating consisting mainly of aluminum nitride and under said semiconductor devices or said semiconductor integrated circuits.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:54
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/411; H10D86/441; H10D86/60; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; H10P14/3816
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
68 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween.
Claim 2
Dependent Claim
68 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween.
Claim 3
Dependent Claim
12 words
The device of claim 1 wherein said third film further comprises hydrogen.
Claim 4
Dependent Claim
20 words
The device of claim 1 wherein said second film comprising silicon oxide has a thickness of 100 to 1000 angstroms.
Claim 5
Dependent Claim
18 words
The device of claim 1 wherein said first film has a thickness of 500 Å to 5 μm.
Claim 6
Dependent Claim
22 words
The device of claim 1 wherein said first film has an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 7
Dependent Claim
56 words
A semiconductor device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a silicon island provided on and in contact with said second film; a gate insulating film provided on said silicon island; and a gate electrode provided on said gate insulating film.
Claim 8
Dependent Claim
56 words
A semiconductor device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a silicon island provided on and in contact with said second film; a gate insulating film provided on said silicon island; and a gate electrode provided on said gate insulating film.
Claim 9
Dependent Claim
20 words
The device of claim 6 wherein said second film comprising silicon oxide has a thickness of 100 to 2000 Å.
Claim 10
Dependent Claim
18 words
The device of claim 6 wherein said first film has a thickness of 500 Å to 5 μm.
Claim 11
Dependent Claim
22 words
The device of claim 6 wherein said first film has an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 12
Dependent Claim
87 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a glass substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween, wherein said first film contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 13
Dependent Claim
87 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a glass substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween, wherein said first film contains an element selected from the group consisting of boron, silicon, carbon and oxygen.
Claim 14
Dependent Claim
20 words
The device of claim 10 wherein said second film comprising silicon oxide has a thickness of 100 to 2000 Å.
Claim 15
Dependent Claim
18 words
The device of claim 10 wherein said first film has a thickness of 500 Å to 5 μm.
Claim 16
Dependent Claim
22 words
The device of claim 10 wherein said first film has an aluminum to nitrogen ratio in the range of 0.9 to 1.4.
Claim 17
Dependent Claim
29 words
The device of claim 10 wherein said first film contains an element selected from the group consisting of boron, silicon, carbon and oxygen at 0.01 to 20 atom %.
Claim 18
Dependent Claim
96 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween, wherein said third film comprising silicon comprises a channel of a thin film transistor provided in said third film at a channel width of 200 to 800 μm.
Claim 19
Dependent Claim
96 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween, wherein said third film comprising silicon comprises a channel of a thin film transistor provided in said third film at a channel width of 200 to 800 μm.
Claim 20
Dependent Claim
82 words
A semiconductor device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a silicon island provided on and in contact with said second film; a gate insulating film provided on said silicon island; and a gate electrode provided on said gate insulating film, wherein said silicon island comprises a channel of a thin film transistor provided in said silicon island at a channel width of 200 to 800 μm.
Claim 21
Dependent Claim
82 words
A semiconductor device comprising: a first film comprising aluminum nitride provided on a substrate; a second film comprising silicon oxide provided on said first film; a silicon island provided on and in contact with said second film; a gate insulating film provided on said silicon island; and a gate electrode provided on said gate insulating film, wherein said silicon island comprises a channel of a thin film transistor provided in said silicon island at a channel width of 200 to 800 μm.
Claim 22
Dependent Claim
85 words
A semiconductor device comprising: a film comprising aluminum nitride having a thermal conductivity of 0.6 W/cm° K. or higher provided on a glass substrate; a silicon island provided on said film; a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said silicon island with an insulator therebetween, wherein said silicon island comprises a channel of a thin film transistor provided in said silicon island at a channel width of 200 to 800 μm.
Claim 23
Dependent Claim
85 words
A semiconductor device comprising: a film comprising aluminum nitride having a thermal conductivity of 0.6 W/cm° K. or higher provided on a glass substrate; a silicon island provided on said film; a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said silicon island with an insulator therebetween, wherein said silicon island comprises a channel of a thin film transistor provided in said silicon island at a channel width of 200 to 800 μm.
Claim 24
Dependent Claim
116 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a glass substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween, wherein said first film contains an element selected from the group consisting of boron, silicon, carbon and oxygen, and wherein said third film comprising silicon comprises a channel of a thin film transistor provided in said third film at a channel width of 200 to 800 μm.
Claim 25
Dependent Claim
116 words
An electro-optical device comprising: a first film comprising aluminum nitride provided on a glass substrate; a second film comprising silicon oxide provided on said first film; a third film comprising silicon provided on and in contact with said second film; and a wiring comprising a material selected from the group consisting of a metal and a semiconductor, said wiring being provided on said third film with an insulator therebetween, wherein said first film contains an element selected from the group consisting of boron, silicon, carbon and oxygen, and wherein said third film comprising silicon comprises a channel of a thin film transistor provided in said third film at a channel width of 200 to 800 μm.
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