US4876582A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Crystallized silicon-on-insulator nonvolatile memory device
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1983-05-02
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Granted: 1989-10-24
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Expires: 2003-05-02
Abstract
Abstract Disclosed is a nonvolatile memory device which utilizes a laser beam recrystallized silicon layer having source-channel-drain regions. Underlying the recrystallized layer and separated therefrom by a memory dielectric is a gate in alignment with the source and drain. The gate is formed directly on a substrate of an insulative material (e.g. non-silicon material). The process of forming the above device comprises forming a conductive polysilicon gate on a substrate followed by a memory nitride layer deposition thereon. A thick oxide layer is formed over the nitride followed by removal of the thick oxide corresponding to a central portion of the gate thereby exposing the nitride therebeneath. The exposed nitride surface is thermally converted into a thin, stoichiometric memory SiO 2 . A doped polysilicon layer is then formed on the structure and thereafter converted to recrystallized silicon by subjecting it to laser radiation. The recrystallized silicon is patterned into the device active area and a source and drain in alignment with the underlying gate are implanted therein.
Inventors
- 👤 John L. Janning
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:54
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/69; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H10P; H10P34/00; H10P34/40; H10P34/42
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
112 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; and wherein said gate insulating film is a dual layer of silicon nitride-silicon dioxide, said silicon nitride being of uniform thickness and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough and relatively thick in said remaining portion for preventing a charge transfer therethrough.
Claim 2
Dependent Claim
112 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; and wherein said gate insulating film is a dual layer of silicon nitride-silicon dioxide, said silicon nitride being of uniform thickness and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough and relatively thick in said remaining portion for preventing a charge transfer therethrough.
Claim 3
Dependent Claim
136 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; wherein said silicon layer includes a spacedapart source and drain of a conductivity type opposite to said silicon layer, in alignment with said gate; and wherein said gate insulating film is a dual layer of silicon nitride-silicon dioxide, said silicon nitride being of uniform thickness and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough and relatively thick in said remaining portion for preventing a charge transfer therethrough.
Claim 4
Dependent Claim
136 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; wherein said silicon layer includes a spacedapart source and drain of a conductivity type opposite to said silicon layer, in alignment with said gate; and wherein said gate insulating film is a dual layer of silicon nitride-silicon dioxide, said silicon nitride being of uniform thickness and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough and relatively thick in said remaining portion for preventing a charge transfer therethrough.
Claim 5
Dependent Claim
133 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; and wherein said gate insulating film is a multiple silicon nitride-silicon oxynitride-silicon dioxide dielectric, and silicon nitride being of uniform thickness, said silicon oxynitride being extremely thin and formed on the silicon nitride in said central portion for permitting charged transfer therethrough and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough in relatively thick over said remaining portion for preventing a charge transfer therethrough.
Claim 6
Dependent Claim
133 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; and wherein said gate insulating film is a multiple silicon nitride-silicon oxynitride-silicon dioxide dielectric, and silicon nitride being of uniform thickness, said silicon oxynitride being extremely thin and formed on the silicon nitride in said central portion for permitting charged transfer therethrough and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough in relatively thick over said remaining portion for preventing a charge transfer therethrough.
Claim 7
Dependent Claim
157 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; wherein said silicon layer includes a spacedapart source and drain of a conductivity type opposite to said silicon layer, in alignment with said gate; and wherein said gate insulating film is a multiple silicon nitride-silicon oxynitride-silicon dioxide dielectric, and silicon nitride being of uniform thickness, said silicon oxynitride being extremely thin and formed on the silicon nitride in said central portion for permitting charged transfer therethrough and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough in relatively thick over said remaining portion for preventing a charge transfer therethrough.
Claim 8
Dependent Claim
157 words
A semiconductor memory device comprising: a substrate; a conductive gate overlying a portion of said substrate; a gate insulating film overlying said gate, said insulating film being relatively thin in a central portion of the region overlying said gate and relatively thick in the remaining portion of the region overlying the gate; a conductive, silicon layer formed over said gate insulating film; wherein said silicon layer includes a spacedapart source and drain of a conductivity type opposite to said silicon layer, in alignment with said gate; and wherein said gate insulating film is a multiple silicon nitride-silicon oxynitride-silicon dioxide dielectric, and silicon nitride being of uniform thickness, said silicon oxynitride being extremely thin and formed on the silicon nitride in said central portion for permitting charged transfer therethrough and said silicon dioxide being relatively thin in said central portion for permitting charged transfer therethrough in relatively thick over said remaining portion for preventing a charge transfer therethrough.
Claim 9
Dependent Claim
162 words
A semiconductor memory field-effect transistor comprising: a substrate; an insulator layer formed on said substrate; a conductive gate electrode overlying a portion of said insulator layer; a silicon nitride-silicon oxynitride-silicon dioxide dielectric layer overlying said gate, said silicon nitride being of uniform thickness, said silicon oxynitride being ultrathin and formed on the silicon nitride corresponding to a central section of the region overlying the gate for permitting charge transfer across the silicon oxynitride, and said silicon dioxide being relatively thin in said central section of the region overlying the gate for permitting charge transfer across said thin silicon dioxide and relatively thick in the remaining sections overlying the gate for preventing charge transfer across said thick silicon dioxide; and a conductive recrystallized silicon layer of the second conductivity type overlying said dielectric layer, said silicon layer having a spacedapart source and drain of the first conductivity type defining a channel region therebetween, said source and drain being in alignment with the gate.
Claim 10
Dependent Claim
162 words
A semiconductor memory field-effect transistor comprising: a substrate; an insulator layer formed on said substrate; a conductive gate electrode overlying a portion of said insulator layer; a silicon nitride-silicon oxynitride-silicon dioxide dielectric layer overlying said gate, said silicon nitride being of uniform thickness, said silicon oxynitride being ultrathin and formed on the silicon nitride corresponding to a central section of the region overlying the gate for permitting charge transfer across the silicon oxynitride, and said silicon dioxide being relatively thin in said central section of the region overlying the gate for permitting charge transfer across said thin silicon dioxide and relatively thick in the remaining sections overlying the gate for preventing charge transfer across said thick silicon dioxide; and a conductive recrystallized silicon layer of the second conductivity type overlying said dielectric layer, said silicon layer having a spacedapart source and drain of the first conductivity type defining a channel region therebetween, said source and drain being in alignment with the gate.
Claim 11
Dependent Claim
12 words
The device as in claim 5 wherein said insulator is silicon dioxide.
Claim 12
Dependent Claim
140 words
A nonvolatile memory silicon gate field effect transistor comprising: a substrate; a relatively thick silicon dioxide insulator layer formed on said substrate; a conductive polysilicon gate electrode formed on a portion of said insulator layer; a dielectric layer consisting, in order, of silicon nitride, silicon oxynitride and silicon dioxide films overlying said gate, said silicon nitride film being of uniform thickness, said silicon oxynitride being ultrathin and formed on the silicon nitride corresponding to a central section of the region overlying the gate, and said silicon dioxide overlying said silicon oxynitride being relatively thin and the silicon dioxide overlying said silicon nitride being relatively thick; and a conductive recrystallized silicon layer of a second conductivity type formed on said dielectric layer, said silicon layer having a spaced-apart source and drain of the first conductivity type in alignment with said gate.
Claim 13
Dependent Claim
140 words
A nonvolatile memory silicon gate field effect transistor comprising: a substrate; a relatively thick silicon dioxide insulator layer formed on said substrate; a conductive polysilicon gate electrode formed on a portion of said insulator layer; a dielectric layer consisting, in order, of silicon nitride, silicon oxynitride and silicon dioxide films overlying said gate, said silicon nitride film being of uniform thickness, said silicon oxynitride being ultrathin and formed on the silicon nitride corresponding to a central section of the region overlying the gate, and said silicon dioxide overlying said silicon oxynitride being relatively thin and the silicon dioxide overlying said silicon nitride being relatively thick; and a conductive recrystallized silicon layer of a second conductivity type formed on said dielectric layer, said silicon layer having a spaced-apart source and drain of the first conductivity type in alignment with said gate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-23 | 1993-04-24 | 1993-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-23 | 1997-04-24 | 1997-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-23 | 2001-04-24 | 2001-10-24 | $7700.00 | Window Closed / Lapsed |