US4151537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gate electrode for MNOS semiconductor memory device
Assignee: Verizon Laboratories Inc
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Filing: 1977-08-05
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Granted: 1979-04-24
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Expires: 1997-08-05
Abstract
Abstract Optimized switching and retention characteristics of an MNOS memory device are obtained by using as a gate electrode material either metals or semi-metals having a high work function, in conjunction with a gate dielectric layer having a low density of trapping states throughout its volume. The preferred gate electrode materials are either titanium or p + -doped polycrystalline silicon.
Inventors
- 👤 Ernest A. Goldman
- 👤 Moe S. Wasserman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 05:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D30/00; H10D30/60; H10D30/69; H10D64/665; H10D64/666; Y; Y10; Y10S; Y10S148/00; Y10S148/156
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
187 words
In a semiconductor memory device including a substrate made of a semiconductive material of a first conductivity type, a source and a drain made of a semiconductive material of a second conductivity type and being non-contiguously disposed in surface regions of said substrate so that the substrate surface region between said source and drain defines a channel, a gate insulator covering said channel and at least a portion of said source and drain adjacent to said channel, said gate insulator including a plurality of layers of dielectric material, and a gate electrode covering said gate insulator, an improvement comprising a dielectric region within said gate insulator having a density of trapping states of about 2×10 12 states per square centimeter and being separated from said channel by a tunneling-conducive distance; and said gate electrode being made of a conductive material having a work function greater than that of aluminum and capable of adequately adhering to said gate insulator for minimizing electron injection from said gate electrode into the material of said gate insulator during the application of high voltage pulses between said gate electrode and said substrate.
Claim 2
Dependent Claim
187 words
In a semiconductor memory device including a substrate made of a semiconductive material of a first conductivity type, a source and a drain made of a semiconductive material of a second conductivity type and being non-contiguously disposed in surface regions of said substrate so that the substrate surface region between said source and drain defines a channel, a gate insulator covering said channel and at least a portion of said source and drain adjacent to said channel, said gate insulator including a plurality of layers of dielectric material, and a gate electrode covering said gate insulator, an improvement comprising a dielectric region within said gate insulator having a density of trapping states of about 2×10 12 states per square centimeter and being separated from said channel by a tunneling-conducive distance; and said gate electrode being made of a conductive material having a work function greater than that of aluminum and capable of adequately adhering to said gate insulator for minimizing electron injection from said gate electrode into the material of said gate insulator during the application of high voltage pulses between said gate electrode and said substrate.
Claim 3
Dependent Claim
16 words
The semiconductor memory device according to claim 1 wherein said gate electrode is made of titanium.
Claim 4
Dependent Claim
19 words
The semiconductor memory device according to claim 1 wherein said gate electrode is made of a degenerate semiconducting material.
Claim 5
Dependent Claim
19 words
The semiconductor memory device according to claim 3 wherein said degenerate semiconducting material is p + -doped polycrystalline silicon.
Claim 6
Dependent Claim
51 words
The semiconductor memory device according to claim 2 further including: (a) a layer of a conducting material disposed on said gate electrode to facilitate the formation of an electrical contact, and (b) a layer of a conducting material on said source and said drain to facilitate the formation of electrical contacts.
Claim 7
Dependent Claim
18 words
The semiconductor memory device according to claim 5 wherein said conducting material on said gate electrode is aluminum.
Claim 8
Dependent Claim
19 words
The semiconductor memory device according to claim 6 wherein said conducting material on said source and drain is aluminum.
Claim 9
Independent Claim
171 words
A method for improving the memory retention of a semiconductive memory device of the type normally including a substrate made of a semiconductive material of a first conductivity type, a source and a drain made of semiconductive material of a second conductivity type and being non-contiguously disposed in surface regions between said source and drain to define a channel, a gate insulator covering said channel and at least a portion of said source and drain adjacent to said channel, said gate insulator including a plurality of layers of dielectric material, and a gate electrode covering said gate insulator, said method comprising the steps of: forming a dielectric region within said gate insulator having a density of trapping states of about 2×10 12 states per square centimeter and at a tunneling-conducive distance from said channel; and suppressing the flow of electron injection current from said gate electrode into said gate insulator with a conductive material capable of adhering to said gate insulator and having a work function greater than that of aluminum.
Claim 10
Independent Claim
171 words
A method for improving the memory retention of a semiconductive memory device of the type normally including a substrate made of a semiconductive material of a first conductivity type, a source and a drain made of semiconductive material of a second conductivity type and being non-contiguously disposed in surface regions between said source and drain to define a channel, a gate insulator covering said channel and at least a portion of said source and drain adjacent to said channel, said gate insulator including a plurality of layers of dielectric material, and a gate electrode covering said gate insulator, said method comprising the steps of: forming a dielectric region within said gate insulator having a density of trapping states of about 2×10 12 states per square centimeter and at a tunneling-conducive distance from said channel; and suppressing the flow of electron injection current from said gate electrode into said gate insulator with a conductive material capable of adhering to said gate insulator and having a work function greater than that of aluminum.
Claim 11
Dependent Claim
13 words
The method of claim 8 wherein said gate electrode is formed from titanium.
Claim 12
Dependent Claim
16 words
The method of claim 8 wherein said gate electrode is formed from a degenerate semiconducting material.
Claim 13
Dependent Claim
48 words
The method of claim 8 including the subsequent steps of: forming a layer of conducting material on said gate electrode to facilitate the formation of an electrical contact; and forming a layer of conducting material on said source and said drain to facilitate the formation of electrical contacts.
Claim 14
Independent Claim
173 words
A method for suppressing electron injection from the gate electrode into the gate insulator of a semiconductor memory device of the type including a substrate made of a semiconductive material of a first conductivity type, of a source and a drain made of a second conductivity type and being non-contiguously disposed in surface regions of said substrate so that the substrate surface regions between said source and drain define a channel, a gate insulator covering said channel and at least a portion of said source and drain adjacent to said channel, said gate insulator including a plurality of layers of dielectric material, a gate electrode covering said gate insulator, said method comprising the steps of: forming a dielectric region within said gate insulator having a density of trapping states of about 2×10 12 states per square centimeter and at a tunneling-conducive distance from said channel; and forming said gate electrode from a conductive material having a work function greater than that of aluminum and being capable of adequately adhering to said gate insulator.
Claim 15
Independent Claim
173 words
A method for suppressing electron injection from the gate electrode into the gate insulator of a semiconductor memory device of the type including a substrate made of a semiconductive material of a first conductivity type, of a source and a drain made of a second conductivity type and being non-contiguously disposed in surface regions of said substrate so that the substrate surface regions between said source and drain define a channel, a gate insulator covering said channel and at least a portion of said source and drain adjacent to said channel, said gate insulator including a plurality of layers of dielectric material, a gate electrode covering said gate insulator, said method comprising the steps of: forming a dielectric region within said gate insulator having a density of trapping states of about 2×10 12 states per square centimeter and at a tunneling-conducive distance from said channel; and forming said gate electrode from a conductive material having a work function greater than that of aluminum and being capable of adequately adhering to said gate insulator.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-04-23 | 1982-10-23 | 1983-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-04-23 | 1986-10-23 | 1987-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-04-23 | 1990-10-23 | 1991-04-24 | $7700.00 | Window Closed / Lapsed |