Method for manufacturing a semiconductor field effort transistor

Claim 1

A method for making a semiconductor structure having at least two diffused regions of one conductive type in a semiconductor substrate, which comprises: forming an insulating layer on said substrate, etching away a portion of said insulating layer, diffusing impurities into said exposed portions of said semiconductor substrate to form said diffused regions, forming a selectively oxidized conductor layer on said diffused regions and said insulating layer by forming a mask selectively on such conductor layer, and fully oxidizing the unmasked portion by anodic oxidation and simultaneously making conductive leads of said masked portion of said conductor layer on said insulating layer and electrodes of said unmasked portion of said conductor layer contacting with said diffused regions.

Claim 2

A method for making a semiconductor structure having at least two diffused regions of one conductive type in a semiconductor substrate, which comprises: forming an insulating layer on said substrate, etching away a portion of said insulating layer, diffusing impurities into said exposed portions of said semiconductor substrate to form said diffused regions, forming a selectively oxidized conductor layer on said diffused regions and said insulating layer by forming a mask selectively on such conductor layer, and fully oxidizing the unmasked portion by anodic oxidation and simultaneously making conductive leads of said masked portion of said conductor layer on said insulating layer and electrodes of said unmasked portion of said conductor layer contacting with said diffused regions.

Claim 6

A method for manufacturing a semiconductor field effect transistor including at least two conductively separated regions formed in a semiconductor substrate so as to define a channel therebetween, said regions having opposite conductivity type to said substrate and providing a source junction and drain junction, and a gate electrode spaced in said channel near the surface of said semiconductor substrate, which method includes the steps of: forming at least one insulating layer on said semiconductor substrate; forming at least one conductive layer over said insulating layer; providing openings to the source and drain respectively by removing selected portions of said insulating and conductive layers, with the remnants of said insulating and conductive layers left between said openings forming said gate insulator and gate electrode; coating the resulting surface with highly doped polycrystalline silicon having the opposite conductivity to said semiconductor substrate; masking portions of the above surface of highly doped polycrystalline silicon, which masked portions are uitlized for the source and drain electrodes and leads, the unmasked portion thereof defining a central portion of said highly doped polycrystalline silicon overlying said gate electrode and said source and drain; thermally oxidizing the unmasked portion of said highly doped polycrystalline silicon until said electrodes and leads are electrically isolated from each other, and simultaneously diffusing impurities into the semiconductor substrate in order to form said source and drain junctions.

Claim 7

A method for manufacturing a semiconductor field effect transistor including at least two conductively separated regions formed in a semiconductor substrate so as to define a channel therebetween, said regions having opposite conductivity type to said substrate and providing a source junction and drain junction, and a gate electrode spaced in said channel near the surface of said semiconductor substrate, which method includes the steps of: forming at least one insulating layer on said semiconductor substrate; forming at least one conductive layer over said insulating layer; providing openings to the source and drain respectively by removing selected portions of said insulating and conductive layers, with the remnants of said insulating and conductive layers left between said openings forming said gate insulator and gate electrode; coating the resulting surface with highly doped polycrystalline silicon having the opposite conductivity to said semiconductor substrate; masking portions of the above surface of highly doped polycrystalline silicon, which masked portions are uitlized for the source and drain electrodes and leads, the unmasked portion thereof defining a central portion of said highly doped polycrystalline silicon overlying said gate electrode and said source and drain; thermally oxidizing the unmasked portion of said highly doped polycrystalline silicon until said electrodes and leads are electrically isolated from each other, and simultaneously diffusing impurities into the semiconductor substrate in order to form said source and drain junctions.

Claim 8

A method making a semiconductor field effect transistor including at least two conductively separated regions formed in a semiconductor substrate so as to define a channel therebetween, said regions having opposite conductivity type to said substrate and providing a source junction and drain junction, and a gate electrode spaced in said channel near the surface of said semiconnector substrate, which method includes the steps of: forming at least one insulating layer on said semiconductor substrate; forming at least one conductive layer over said insulating layer; providing openings for said source and drain respectively by removing selected portions of said insulating and conductive layers, the remnants of said insulating layer and said conductive layer left between said openings forming said gate insulator and gate electrode; diffusing highly doped impurities of opposite conductivity to the conductivity of the semiconductor substrate into the semiconductor substrate from said provided openings for source and drain; forming a conductor coating selected from the group consisting of aluminum, titanum and silicon over the resulting structure, which coating is to be used for the source and drain electrodes and leads, and for an insulator surrounding the gate electrode; masking portions of said conductor coating, which portions form said electrodes and leads to the source and drain, the unmasked portion defining a central portion of said conductor coating overlying said gate electrode and said source and drain; performing anodic oxidation of said central portion of said conductor coating in order to isolate said electrodes and leads from each other electrically and form said insulator surrounding said gate electrode.

Claim 9

A method making a semiconductor field effect transistor including at least two conductively separated regions formed in a semiconductor substrate so as to define a channel therebetween, said regions having opposite conductivity type to said substrate and providing a source junction and drain junction, and a gate electrode spaced in said channel near the surface of said semiconnector substrate, which method includes the steps of: forming at least one insulating layer on said semiconductor substrate; forming at least one conductive layer over said insulating layer; providing openings for said source and drain respectively by removing selected portions of said insulating and conductive layers, the remnants of said insulating layer and said conductive layer left between said openings forming said gate insulator and gate electrode; diffusing highly doped impurities of opposite conductivity to the conductivity of the semiconductor substrate into the semiconductor substrate from said provided openings for source and drain; forming a conductor coating selected from the group consisting of aluminum, titanum and silicon over the resulting structure, which coating is to be used for the source and drain electrodes and leads, and for an insulator surrounding the gate electrode; masking portions of said conductor coating, which portions form said electrodes and leads to the source and drain, the unmasked portion defining a central portion of said conductor coating overlying said gate electrode and said source and drain; performing anodic oxidation of said central portion of said conductor coating in order to isolate said electrodes and leads from each other electrically and form said insulator surrounding said gate electrode.

Claim 10

A method for manufacturing a semiconductor field effect transistor including at least two conductively separated regions formed in a semiconductor substrate so as to define a channel therebetween, said regions having opposite conductivity type to said substrate and providing a source junction and drain junction, and a gate electrode spaced in said channel near the surface of said semiconductor substrate, and an insulator covering said gate electrode, which method includes the steps of: forming at least one insulating layer on said semiconductor substrate; forming at least one conductive layer over said insulating layer; forming at least one source, base and drain having a conductivity type, relative to substrate of N - , of a base of P + , and a source and drain of N + + respectively; forming a conductor coating selected from the group consisting of aluminum, titanium and silicon over the resulting structure, which coating is to be used for the source and drain electrodes and leads, and for an insulator surrounding the gate electrode; masking portions of the conductor coating, which portions form said electrodes and leads to the source and drain, the unmasked portion defining a central portion of said conductor coating overlying said gate electrode and said source and drain; performing anodic oxidation of said central portion of said conductor coating in order to isolate said electrodes and leads from each other electrically and form said insulator surrounding said gate electrode.

Claim 11

A method for manufacturing a semiconductor field effect transistor including at least two conductively separated regions formed in a semiconductor substrate so as to define a channel therebetween, said regions having opposite conductivity type to said substrate and providing a source junction and drain junction, and a gate electrode spaced in said channel near the surface of said semiconductor substrate, and an insulator covering said gate electrode, which method includes the steps of: forming at least one insulating layer on said semiconductor substrate; forming at least one conductive layer over said insulating layer; forming at least one source, base and drain having a conductivity type, relative to substrate of N - , of a base of P + , and a source and drain of N + + respectively; forming a conductor coating selected from the group consisting of aluminum, titanium and silicon over the resulting structure, which coating is to be used for the source and drain electrodes and leads, and for an insulator surrounding the gate electrode; masking portions of the conductor coating, which portions form said electrodes and leads to the source and drain, the unmasked portion defining a central portion of said conductor coating overlying said gate electrode and said source and drain; performing anodic oxidation of said central portion of said conductor coating in order to isolate said electrodes and leads from each other electrically and form said insulator surrounding said gate electrode.