US3541676A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming field-effect transistors utilizing doped insulators as activator source
Assignee: General Electric Co
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Filing: 1967-12-18
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Granted: 1970-11-24
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Expires: 1987-12-18
Abstract
No abstract record available.
Inventors
- 👤 Dale M Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 06:04
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P95/00; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/59; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/043; Y10S148/053; Y10S148/106; Y10S148/141; Y10S148/145; Y10S438/00; Y10S438/914; Y10S438/923
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
US3200019A
Cited
US3387358A
Cited
US3165430A
Cited
US3447238A
Cited
US3426422A
Cited
US3438873A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1973-11-23 | 1974-05-25 | 1974-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1977-11-23 | 1978-05-25 | 1978-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1981-11-23 | 1982-05-25 | 1982-11-24 | $7700.00 | Window Closed / Lapsed |