US3673679A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complementary insulated gate field effect devices
Assignee: Texas Instruments Inc
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Filing: 1970-12-01
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Granted: 1972-07-04
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Expires: 1990-12-01
Abstract
Abstract A complementary pair of insulated gate field effect transistors is fabricated in a monocrystalline silicon wafer. The method features the use of doped-oxide diffusion sources, self-aligned, passivated-gate electrodes, and the concurrent diffusion of the source and the drain regions for both the n-channel device and the p-channel device in a single step.
Inventors
- 👤 Bernard G Carbajal
- 👤 William Milton Gosney
- 👤 Lou H Hall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:13
CPC Classifications
H; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/106; Y10S148/114; Y10S148/122; Y10S148/126; Y10S148/151
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
14 words
A method as defined by claim 1 wherein said semiconductor body is n-type silicon.
Claim 2
Dependent Claim
16 words
A method as defined by claim 2 wherein said first insulative film is thermally-grown silicon oxide.
Claim 3
Dependent Claim
16 words
A method as defined by claim 3 wherein said second insulative film is boron-doped silicon oxide.
Claim 4
Dependent Claim
25 words
A method as defined by claim 4 wherein a layer of undoped oxide is deposited on said boron-doped oxide prior to the first heating step.
Claim 5
Dependent Claim
28 words
A method as defined by claim 1 wherein said fourth insulative film comprises a first layer of thermally-grown silicon oxide and a deposited second layer of silicon nitride.
Claim 6
Dependent Claim
13 words
A method as defined by claim 6 wherein said conductor film is molybdenum.
Claim 7
Dependent Claim
16 words
A method as defined by claim 1 wherein said fifth insulative film is boron-doped silicon oxide.
Claim 8
Dependent Claim
16 words
A method as defined by claim 8 wherein said sixth insulative film is phosphorous-doped silicon oxide.
Claim 9
Dependent Claim
27 words
A method as defined by claim 9 wherein a layer of undoped silicon oxide is deposited on said sixth insulative film prior to the second heating step.
Claim 10
Dependent Claim
28 words
A method as defined by claim 1 wherein a portion of said conductor film is retained on said fourth insulating film as a buried level of electrical interconnections.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-07-04 | 1976-01-03 | 1976-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-07-04 | 1980-01-03 | 1980-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-07-04 | 1984-01-03 | 1984-07-04 | $7700.00 | Window Closed / Lapsed |