Method for fabricating field-effect transistor devices and integrated circuit modules containing the same by selective diffusion of activator impurities through preselected portions of passivating-insulating films
Abstract
Abstract IMPROVED SEMICONDUCTOR FIELD-EFFECT TRANSISTORS HAVE SELF-REGISTRATION AND ELECTRICAL INSULATION. CONDUCTIVITYMODIFIED, SURFACE-ADJACENT SOURCE AND DRAIN REGIONS ARE FORMED BY DIFFUSING DOPANTS THROUGH GATE-OXIDE LAYER. ONE EMBODIMENT FEATURES A CONDUCTING GATE ELECTRODE WHICH IS FORMED FROM A THIN DEPOSITED FILM. IN THIS EMBODIMENT A LARGE REGION OF OPPOSITE-CONDUCTIVITY-TYPE SEMICONDUCTOR IS FORMED BY DIFFUSION THROUGH BOTH CONDUCTING AND OXIDE FILMS. COMPLEMENTARY "N-CHANNEL" AND "P-CHANNEL" DEVICES MAY BE FORMED ON THE SAME SUBSTRATE BY COMBINING TWO SEPARATE EMBODIMENTS. IN SUCH DEVICES THE ORIGINAL CONDUCTIVITY-TYPE SEMICONDUCTOR IS THE BASE FOR ONE FET, WHILE THE LARGE CONDUCTIVITY-MODIFIED TYPE REGION IS THE BASE FOR THE OTHER FET. SUCH MODULES MAY BE INTERCONNECTED TO FORM INTEGRATED CIRCUITS CAPABLE OF PERFORMING A VARIETY OF LOGICAL FUNCTIONS.
Inventors
- 👤 Dale M Brown
- 👤 William E Engeler
Bibliographic Details
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