Method of making complementary field-effect transistors by single step diffusion

Abstract

Abstract D R A W I N G COMPLEMENTARY N-CHANNEL AND P-CHANNEL FIELD-EFFECT TRANSISTORS ARE FORMED ON A SINGLE CONDUCTIVITY-TYPE SEMICONDUCTOR WAFER BY A SINGLE DIFFUSION STEP AND A SINGLE PATTERNING STEP WHICH SEPARATES THE N-CHANNEL FROM THE P-CHANNEL DEVICES. IN ONE EMBODIMENT, COMPLEMENTARY DEVICES ARE MADE BY FORMING AN APPROPRIATE PATTERN IN A CONDUCTING AND AN INSULATING FILM OVERLYING A SEMICONDUCTOR WAFER OF A FIRST CONDUCTIVITY TYPE, DEPOSITING AN OPPOSITE CONDUCTIVITY TYPE INDUCING IMPURITY-DOPED INSULATING FILM OVER THE PATTERNED WAFER, DEPOSITING A FIRST CONDUCTIVITY TYPE INDUCING IMPURITY-DOPED INSULATING FILM OVER THE FIRST FILM, REMOVING THE IMPURITY-DOPED FILMS FROM ONE PORTION OF THE WAFER, DEPOSITING AN OPPOSITE CONDUCTIVITY TYPE INDUCING IMPURITY-DOPED INSULATING FILM OVER THE ENTIRE WAFER, DIFFUSING THE IMPURITIES INTO THE WAFER TO FORM SOURCE AND DRAIN REGIONS FOR ONE TRANSISTOR AND SOURCE, DRAIN AND A CHANNEL REGION FOR THE COMPLEMENTARY TRANSISTOR AND FORMING ELECTRICAL CONTACTS TO THE SOURCE, DRAIN AND GATE REGIONS OF BOTH DEVICCES.

Inventors

• 👤 Peter V Gray

Bibliographic Details