Abstract An insulated gate field-effect transistor is fabricated to include an improved insulation layer comprising a film of silicon dioxide covered with a film of silicon nitride. The method of fabrication includes the thermal oxidation of a semiconductor silicon surface in a ''''reducing'''' atomsphere. The use of hydrogen as a carrier gas for oxygen provides a thermally grown, pinholefree oxide film having improved stability under conditions of heat cycling and electrical bias. The process permits a control of oxidation rate by adjusting the oxygen content of the gaseous mixture, rather than by the control of temperature. Best device characteristics are obtained by proceeding immediately with the vapor deposition of silicon nitride on the oxide, as a substantially continuous operation in the same reactor.
A transistor as defined by claim 1 wherein the silicon body is of P-type conductivity and said source and drain regions are of N-type conductivity.
Claim 2
Dependent Claim
19 words
A transistor as defined by claim 2 further including a diffused N-type channel connecting said source and drain regions.
Claim 3
Dependent Claim
23 words
A transistor defined by claim 1 wherein said silicon body is of N-type conductivity and said source and drain are of P-type conductivity.
Claim 4
Dependent Claim
21 words
A transistor as defined by claim 4 further including a channel region of type conductivity connecting said source and drain regions.
Claim 5
Dependent Claim
63 words
A semiconductor device comprising a silicon body of one conductivity type having a plurality of regions therein of opposite conductivity type, a layer of silicon dioxide substantially free of sodium ion contamination and of uniform thickness covering portions of the surface of said body including the surfaces of said regions, a layer of silicon nitride of uniform thickness covering said silicon dioxide layer.