US5663077A
Expired / Lapsed
US
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Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-07-26
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Granted: 1997-09-02
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Expires: 2014-07-26
Abstract
Abstract A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.
Inventors
- 👤 Hiroki Adachi
- 👤 Akira Takenouchi
- 👤 Takeshi Fukada
- 👤 Hiroshi Uehara
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 05:19
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D86/40; H10D86/60; H10D30/674; H10D30/6741; H10D30/6743
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
84 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; oxidizing a surface of said semiconductor film to form an oxide film by irradiating said surface with light having a wavelength of 0.5 μm to 4 μm in an oxidizing atmosphere; depositing an insulating film on the oxidized surface of said semiconductor film to form a gate insulating film of said semiconductor device; and forming a gate electrode on said insulating film.
Claim 2
Independent Claim
84 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; oxidizing a surface of said semiconductor film to form an oxide film by irradiating said surface with light having a wavelength of 0.5 μm to 4 μm in an oxidizing atmosphere; depositing an insulating film on the oxidized surface of said semiconductor film to form a gate insulating film of said semiconductor device; and forming a gate electrode on said insulating film.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said light is a laser light.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein said light is a non-coherent light.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein said insulating film is deposited through a vapor phase deposition.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said insulating film is deposited through sputtering.
Claim 7
Dependent Claim
36 words
The method of claim 1 wherein said insulating film is deposited by a CVD method using a starting gas comprising TEOS and an oxidizing gas selected from the group consisting of oxygen, ozone and nitrogen oxide.
Claim 8
Dependent Claim
37 words
The method of claim 6 wherein a concentration of P, C or N contained in said insulating film is higher than a concentration of P, C or N in an oxide layer formed by said oxidizing step.
Claim 9
Dependent Claim
11 words
The method of claim 1 wherein said semiconductor film comprises silicon.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said oxide film has a thickness from 20 Å to 200 Å.
Claim 11
Dependent Claim
20 words
The method of claim 1 further comprising the step of crystallizing said semiconductor film prior to said step of oxidizing.
Claim 12
Independent Claim
113 words
A method for manufacturing a semiconductor device comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; disposing a catalyst in contact with said amorphous semiconductor film, said catalyst being capable of promoting crystallization of said amorphous semiconductor film; crystallizing said semiconductor film with the aid of said catalyst; oxidizing a surface of said semiconductor film after the crystallization to form an oxide film by irradiating said surface with light in an oxidizing atmosphere; depositing an insulating film on the oxidized surface of said semiconductor film by deposition to form a gate insulating film of said semiconductor device; and forming a gate electrode on said insulating film.
Claim 13
Independent Claim
113 words
A method for manufacturing a semiconductor device comprising the steps of: forming an amorphous semiconductor film on a substrate having an insulating surface; disposing a catalyst in contact with said amorphous semiconductor film, said catalyst being capable of promoting crystallization of said amorphous semiconductor film; crystallizing said semiconductor film with the aid of said catalyst; oxidizing a surface of said semiconductor film after the crystallization to form an oxide film by irradiating said surface with light in an oxidizing atmosphere; depositing an insulating film on the oxidized surface of said semiconductor film by deposition to form a gate insulating film of said semiconductor device; and forming a gate electrode on said insulating film.
Claim 14
Dependent Claim
17 words
The method of claim 11 wherein said light has a wavelength of 0.5 μm to 4 μm.
Claim 15
Independent Claim
104 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; oxidizing a surface of said semiconductor film to form an oxide film by irradiating said surface with light in an oxidizing atmosphere; depositing a silicon oxide film by CVD using a reactive gas containing at least an oxidizing gas and an organic silane; annealing said silicon oxide film in an atmosphere comprising a material selected from the group consisting of NH 3 , N 2 H 4 , and N 2 O; and forming a gate electrode on said annealed oxide film.
Claim 16
Independent Claim
104 words
A method for manufacturing a semiconductor device comprising the steps of: forming a semiconductor film on a substrate having an insulating surface; oxidizing a surface of said semiconductor film to form an oxide film by irradiating said surface with light in an oxidizing atmosphere; depositing a silicon oxide film by CVD using a reactive gas containing at least an oxidizing gas and an organic silane; annealing said silicon oxide film in an atmosphere comprising a material selected from the group consisting of NH 3 , N 2 H 4 , and N 2 O; and forming a gate electrode on said annealed oxide film.
Claim 17
Dependent Claim
17 words
The method of claim 13 wherein said light has a wavelength of 0.5 μm to 4 μm.
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