US5028560A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a thin layer on a semiconductor substrate
Assignee: Mitsubishi Electric Corp
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Filing: 1989-03-01
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Granted: 1991-07-02
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Expires: 2009-03-01
Abstract
Abstract A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300° C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperature of 200°-700° C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor device with the thin layer of material formed thereon having a well-controlled, well-organized interface between them.
Inventors
- 👤 Katsuhiro Tsukamoto
- 👤 Akira Tokui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 11:23
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6509; H10P14/6512; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S438/00; Y10S438/909; Y10S438/974
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
120 words
A method for forming a thin layer on a cleaned surface of a semiconductor substrate comprising the steps of: growing a thin oxide layer on a surface of a semiconductor substrate by exposing said semiconductor substrate to an oxidizing gas atmosphere while irradiating said surface of said semiconductor substrate with light; heating said semiconductor substrate to a temperature of from 200° C. to 700° C. in the presence of an oxide-etching gas while irradiating said surface of said semiconductor substrate with light, to thereby remove said thin oxide layer and provide a cleaned surface on said semiconductor substrate; and subsequently forming a thin layer on said cleaned surface of said semiconductor substrate without exposing said semiconductor substrate to ambient air.
Claim 2
Independent Claim
120 words
A method for forming a thin layer on a cleaned surface of a semiconductor substrate comprising the steps of: growing a thin oxide layer on a surface of a semiconductor substrate by exposing said semiconductor substrate to an oxidizing gas atmosphere while irradiating said surface of said semiconductor substrate with light; heating said semiconductor substrate to a temperature of from 200° C. to 700° C. in the presence of an oxide-etching gas while irradiating said surface of said semiconductor substrate with light, to thereby remove said thin oxide layer and provide a cleaned surface on said semiconductor substrate; and subsequently forming a thin layer on said cleaned surface of said semiconductor substrate without exposing said semiconductor substrate to ambient air.
Claim 3
Dependent Claim
41 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said oxidizing gas is selected from a group consisting of O 2 , O 3 , N 2 O and NF 3 .
Claim 4
Dependent Claim
36 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said oxide-etching gas is selected from a group consisting of hydrogen chloride gas, chlorine gas, and hydrogen gas.
Claim 5
Dependent Claim
44 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said step of forming a thin layer of material on said semiconductor substrate comprises forming said thin layer by means of a chemical vapor deposition technique.
Claim 6
Dependent Claim
36 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said step of forming a thin layer of material on said semiconductor substrate comprises sputter-depositing said thin layer.
Claim 7
Dependent Claim
75 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said step of removing said oxide layer comprises carrying said semiconductor substrate into a first chamber; and filling said first chamber with said oxidizing gas, and said step of forming said thin layer of material comprises: carrying said semiconductor substrate from said first chamber into a second chamber; and filling said second chamber with said oxide-etching gas.
Claim 8
Dependent Claim
76 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 6, wherein said step of carrying said semiconductor substrate from said first chamber to said second chamber comprises: transferring said semiconductor substrate from said first chamber into a third chamber which is provided between said first and second chambers and is controlled to contain no ambient air, and transferring said semiconductor substrate from said third chamber into said second chamber.
Claim 9
Dependent Claim
70 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said step of removing said oxide layer comprises carrying said semiconductor substrate into a chamber and filling said chamber with said oxide-etching gas, and said step for forming a thin layer of material comprises replacing said oxide-etching gas within said chamber with a gas suitable for forming said thin layer of material.
Claim 10
Dependent Claim
27 words
A method for forming a thin layer of material on a semiconductor substrate according to claim 1, wherein said light source comprises a source of ultra-violet light.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |