Method of growing epitaxial semiconductor films utilizing radiant heating

Abstract

Abstract A method of growing epitaxial semiconductor films on substrates is proposed which consists in that a substrate is cleaned from damage layers and heated to a critical epitaxy temperature simultaneously by irradiating a substrate surface with an intensive luminous flux. A source material for growing a film is introduced to the substrate in a gaseous state. When producing multi-layer semiconductor structures, a substrate surface opposite to a surface exposed to the luminous flux is cooled to a temperature sufficient to prevent mutual diffusion between the film and the substrate materials. Versions of an apparatus for carrying this method into effect are also proposed. The apparatus includes a quartz chamber with a vaporizer for vaporizing the source material for film growing, a means for supporting the substrate and openings for introducing a neutral or reducing agent. The apparatus is provided with furnaces for heating the walls of the chamber. Each apparatus has a powerful light source disposed outside the chamber so as to face a working surface of the substrate support.

Inventors

• 👤 Yulia Ivanovna Gorina
• 👤 Galina Alexandrovna Kaljuzhnaya
• 👤 Andrei Vasilievich Kuznetsov
• 👤 Sergei Nikolaevich Maximovsky
• 👤 Mikhail Borisovich Nikiforov
• 👤 Bentsion Moiseevich Vul
• 👤 Galina Evgenievna Ivannikova
• 👤 Vintsentas Ionovich Denis
• 👤 Mikolas Mikolo Yarmalis
• 👤 Vitautas Ionovich Repshis

Bibliographic Details