Abstract A method of growing epitaxial semiconductor films on substrates is proposed which consists in that a substrate is cleaned from damage layers and heated to a critical epitaxy temperature simultaneously by irradiating a substrate surface with an intensive luminous flux. A source material for growing a film is introduced to the substrate in a gaseous state. When producing multi-layer semiconductor structures, a substrate surface opposite to a surface exposed to the luminous flux is cooled to a temperature sufficient to prevent mutual diffusion between the film and the substrate materials. Versions of an apparatus for carrying this method into effect are also proposed. The apparatus includes a quartz chamber with a vaporizer for vaporizing the source material for film growing, a means for supporting the substrate and openings for introducing a neutral or reducing agent. The apparatus is provided with furnaces for heating the walls of the chamber. Each apparatus has a powerful light source disposed outside the chamber so as to face a working surface of the substrate support.
A vapor phase method for growing epitaxial semiconductor films, in an enclosed chamber, of silicon and the type selected from the group consisting of monocrystalline, A 2 B 6 and A 4 B 6 on a substrate with a support which does not absorb radiant heat comprising: heating a working surface of said substrate in an inert atmosphere to a critical epitaxy temperature by means of radiant light having a luminous flux intensity from about 10 1 to 10 4 watts per square centimeter of substrate surface, said critical temperature sufficient to enable epitaxial growth on the working surface of said substrate; introducing a gaseous source material capable of forming a film on the working surface of said substrate exposed to the radiant light, while simultaneously force cooling the opposite side of the working surface of the substrate to a temperature gradient sufficient to prevent mutual diffusion between the film being deposited on the working surface of the substrate, and the substrate components.
Claim 2
Dependent Claim
163 words
A vapor phase method for growing epitaxial semiconductor films, in an enclosed chamber, of silicon and the type selected from the group consisting of monocrystalline, A 2 B 6 and A 4 B 6 on a substrate with a support which does not absorb radiant heat comprising: heating a working surface of said substrate in an inert atmosphere to a critical epitaxy temperature by means of radiant light having a luminous flux intensity from about 10 1 to 10 4 watts per square centimeter of substrate surface, said critical temperature sufficient to enable epitaxial growth on the working surface of said substrate; introducing a gaseous source material capable of forming a film on the working surface of said substrate exposed to the radiant light, while simultaneously force cooling the opposite side of the working surface of the substrate to a temperature gradient sufficient to prevent mutual diffusion between the film being deposited on the working surface of the substrate, and the substrate components.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein said semiconductor films are selected from the group consisting of HgCdTe, CdTe, PbTe, and PbSnTe.
Claim 4
Dependent Claim
11 words
The method of claim 1, wherein said semiconductor film is Si.
Claim 5
Dependent Claim
11 words
The method of claim 2, wherein said semiconductor film is CdTe.
Claim 6
Dependent Claim
19 words
The method of claim 2, wherein said semiconductor film is selected from the groups consisting of PbSnTe and PbTe.