Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form an oxide film having the excellent quality of a film thinly on the interface between an silicon substrate and a first oxide film by forming the first oxide film onto the silicon substrate through thermal oxidation in an electric furnace and projecting a laser onto the first oxide film in an oxygen atmosphere. CONSTITUTION:A first oxide film 2 is shaped onto an silicon substrate 1 through thermal oxidation in an electric furnace. The substrate 1 is preheated, and a laser is projected from the upper section of the oxide film 2 in an oxygen atmosphere. Consequently, a gate oxide film 3 grows on the interface between the oxide film 2 and the substrate 1. Accordingly, the oxide film 3, the quality of a film thereof hardly disperses, is formed thinly on the interface between the oxide film 2 and the substrate 1.

Inventors

• 👤 Takashi Taniguchi
• 👤 隆 谷口
• 👤 Morio Inoue
• 👤 井上　森雄

Bibliographic Details