US4675978A
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US
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Method for fabricating a radiation hardened oxide having two portions
Assignee: Fairchild Semiconductor Corp
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Filing: 1985-09-09
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Granted: 1987-06-30
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Expires: 2005-09-09
Abstract
Abstract A method for making a partially radiation hardened oxide comprises forming a first portion of an oxide layer on a semiconductor body of material at a temperature between about 950° C. and 1400° C., preferably between about 1000° C. and 1200° C. Thereafter a second portion of the oxide layer is formed between the semiconductor body and the first oxide layer at a temperature between about 850° C. and 900° C., preferably at about 875° C.
Inventors
- 👤 George A. Swartz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:34
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/60; H10D64/66; H10D64/68; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10D64/01346; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; Y; Y10; Y10S; Y10S148/00; Y10S148/118; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
71 words
A method for making a radiation hardened oxide layer comprising: forming a first portion of said oxide layer on a body of silicon semiconductor material at a temperature of between about 950° C. and 1400° C.; and forming a second portion of said oxide layer in a steam ambient at a temperature between about 850° C. and 900° C., said second portion being disposed between said body and said first portion.
Claim 2
Independent Claim
71 words
A method for making a radiation hardened oxide layer comprising: forming a first portion of said oxide layer on a body of silicon semiconductor material at a temperature of between about 950° C. and 1400° C.; and forming a second portion of said oxide layer in a steam ambient at a temperature between about 850° C. and 900° C., said second portion being disposed between said body and said first portion.
Claim 3
Dependent Claim
25 words
The method of claim 1, wherein said body has a temperature of between about 1000° C. and 1200° C. during said first recited forming step.
Claim 4
Dependent Claim
17 words
The method of claim 1, wherein said second portion has a minimum thickness of about 10 nm.
Claim 5
Dependent Claim
20 words
The method of claim 1, wherein said second recited forming step is performed at a temperature of about 875° C.
Claim 6
Dependent Claim
39 words
The method of claim 1, wherein said body comprises a silicon mesa disposed on an insulating substrate and further comprising: forming a gate on said oxide layer; and forming source and drain regions in said mesa adjacent said gate.
Claim 7
Dependent Claim
18 words
The method of claim 5, wherein said step of forming said gate comprises depositing and defining polycrystalline silicon.
Claim 8
Dependent Claim
21 words
The method of claim 5, wherein said step of forming source and drain regions comprises ion implanting a conductivity modifying dopant.
Claim 9
Dependent Claim
22 words
The method of claim 1, wherein said first portion has a thickness of about three times the thickness of said second portion.
Claim 10
Independent Claim
71 words
A method for making a radiation hardened oxide layer comprising: forming by thermal oxidation a first portion of said oxide layer on a silicon body at a temperature of between about 950° C. and 1400° C.; and forming a second portion of said oxide layer in a steam ambient at a temperature between about 850° C. and 900° C., said second portion being disposed between said body and said first portion.
Claim 11
Independent Claim
71 words
A method for making a radiation hardened oxide layer comprising: forming by thermal oxidation a first portion of said oxide layer on a silicon body at a temperature of between about 950° C. and 1400° C.; and forming a second portion of said oxide layer in a steam ambient at a temperature between about 850° C. and 900° C., said second portion being disposed between said body and said first portion.
Claim 12
Dependent Claim
25 words
The method of claim 9, wherein said body has a temperature of between about 1000° C. and 1200° C. during said first recited forming step.
Claim 13
Dependent Claim
17 words
The method of claim 9, wherein said second portion has a minimum thickness of about 10 nm.
Claim 14
Dependent Claim
20 words
The method of claim 9, wherein said second recited forming step is performed at a temperature of about 870° C.
Claim 15
Dependent Claim
38 words
The method of claim 9, wherein said body comprises a mesa disposed on an insulating substrate and further comprising: forming a gate on said oxide layer; and forming source and drain regions in said mesa adjacent said gate.
Claim 16
Dependent Claim
18 words
The method of claim 13, wherein said step of forming said gate comprises depositing and defining polycrystalline silicon.
Claim 17
Dependent Claim
21 words
The method of claim 13, wherein said step of forming source and drain regions comprises ion implanting a conductivity modifying dopant.
Claim 18
Dependent Claim
22 words
The method of claim 9, wherein said first portion has a thickness of about three times the thickness of said second portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-06-29 | 1990-12-29 | 1991-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-06-29 | 1994-12-29 | 1995-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-06-29 | 1998-12-29 | 1999-06-30 | $7700.00 | Window Closed / Lapsed |