US5010033A — Process for producing compound semiconductor usin…

Claim 1

Independent Claim 270 words

A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a non-nucleation surface (S NDS ) with a smaller nucleation density and an amorphous nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area so as to form a single nucleus from which a single crystal is grown and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ) so as to form only a single nucleus from which a single crystal is grown, by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table; and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow only from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to a first electroconduction type and a starting material (Dp) for feeding a dopant for controlling to a second electroconduction type opposite to said first electroconduction type with change-over to one another into said gas phase, during said crystal forming treatment.

Claim 2

Dependent Claim 270 words

A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a non-nucleation surface (S NDS ) with a smaller nucleation density and an amorphous nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area so as to form a single nucleus from which a single crystal is grown and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ) so as to form only a single nucleus from which a single crystal is grown, by exposing the substrate to either of the gas phases: (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table; and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow only from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to a first electroconduction type and a starting material (Dp) for feeding a dopant for controlling to a second electroconduction type opposite to said first electroconduction type with change-over to one another into said gas phase, during said crystal forming treatment.

Claim 3

Dependent Claim 23 words

A process for producing a compound semiconductor according to claim 1, wherein said crystal growth treatment is performed according to the MOCVD method.

Claim 4

Dependent Claim 28 words

A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed internally of said nonnucleation surface (S NDS ).

Claim 5

Dependent Claim 26 words

A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized.

Claim 6

Dependent Claim 27 words

A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized regularly.

Claim 7

Dependent Claim 27 words

A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in a plural number as sectionalized irregularly.

Claim 8

Dependent Claim 26 words

A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed in the shape of a lattice.

Claim 9

Dependent Claim 41 words

A process for producing a compound semiconductor according to claim 1, wherein the monocrystal formed on the nucleation surface (S NDL ) is grown in the direction of the nucleation surface (S NDL ) beyond said nucleation surface (S NDL ).

Claim 10

Dependent Claim 39 words

A process for producing a compound semiconductor according to claim 4, wherein the monocrystal grown from the each nucleation surface (S NDL ) is grown to the size to be adjacent to the adjoining nucleation surface (S NDL ).

Claim 11

Dependent Claim 37 words

A process for producing a compound semiconductor according to claim 1, wherein said nucleation surface (S NDL ) is formed of a material which is modified from the material for producing said nonnucleation surface (S NDS ).

Claim 12

Dependent Claim 21 words

A process for producing a compound semiconductor according to claims 1, wherein said compound semiconductor is a binary system compound semiconductor.

Claim 13

Dependent Claim 21 words

A process for producing a compound semiconductor according to claim 1, wherein said compound semiconductor is a mixed crystal compound semiconductor.

Claim 14

Dependent Claim 247 words

A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with a smaller nucleation density and an amorphous nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area so as to form a single nucleus from which a single crystal is grown and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ), so as to form a single nucleus from which a single crystal is grown by exposing the substrate to either of the gas phases; (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table; and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow only from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type while changing the introduced amount of said starting material (Dn) with the lapse of time.

Claim 15

Dependent Claim 247 words

A process for producing a compound semiconductor, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with a smaller nucleation density and an amorphous nucleation surface (S NDL ) arranged adjacent thereto having a sufficiently small area so as to form a single nucleus from which a single crystal is grown and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ), so as to form a single nucleus from which a single crystal is grown by exposing the substrate to either of the gas phases; (a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table; and (b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming a single nucleus on said nucleation surface (S NDL ) and permitting a monocrystal of the compound semiconductor to grow only from said single nucleus, characterized in that a semiconductor junction is formed in said monocrystal by feeding a starting material (Dn) for feeding a dopant for controlling to one electroconduction type while changing the introduced amount of said starting material (Dn) with the lapse of time.

Claim 16

Dependent Claim 20 words

A process for producing a compound semiconductor according to claim 1, wherein said substrate is constituted of an amorphous material.

Claim 17

Dependent Claim 19 words

A process for producing a compound semiconductor according to claim 14, wherein said amorphous material is SiO 2 .

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1994-04-22	1994-10-22	1995-04-23	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1998-04-22	1998-10-22	1999-04-23	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2002-04-22	2002-10-22	2003-04-23	$7700.00	Window Closed / Lapsed

Process for producing compound semiconductor using an amorphous nucleation site

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