US4470192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of selected area doping of compound semiconductors
Assignee: Boeing North American Inc
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Filing: 1983-08-22
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Granted: 1984-09-11
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Expires: 2003-08-22
Abstract
Abstract A method is provided for selectively doping a compound semiconductor such as GaAs in situ by molecular beam epitaxy. The surface of the GaAs is coated with a thin layer of As by exposing it to an arsenic flux within a molecular beam epitaxy chamber. Selected areas of the surface are irradiated with a laser beam or a beam of photons, electrons, or ions in order to desorb As and form a mask of As on the surface. Dopant material such as tin is then deposited over the surface and As mask. The semiconductor is then heated to desorb the As mask while leaving the dopant in the unmasked areas. An epitaxial layer of GaAs is then grown over the surface by molecular beam epitaxy.
Inventors
- 👤 David L. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:08
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/36; H10P32/17; H10P32/174; Y; Y10; Y10S; Y10S148/00; Y10S148/084
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
119 words
A method of selective area doping compound semiconductors, comprising the steps of: exposing to a high vacuum the surface of a compound semiconductor selected from the group consisting of compounds from groups III-V and groups II-VI of the periodic table; selectively coating said surface with a thin layer of a volatile, non-reactive element selected from the same periodic table group as said compound semiconductor; depositing dopant material over said surface and over said thin layer; heating said surface, whereby said thin layer with said dopant is desorbed from said surface leaving said dopant on the portions of said surface which were not selectively coated with said thin layer; and growing an epitaxial layer of semiconductive material on said surface.
Claim 2
Independent Claim
119 words
A method of selective area doping compound semiconductors, comprising the steps of: exposing to a high vacuum the surface of a compound semiconductor selected from the group consisting of compounds from groups III-V and groups II-VI of the periodic table; selectively coating said surface with a thin layer of a volatile, non-reactive element selected from the same periodic table group as said compound semiconductor; depositing dopant material over said surface and over said thin layer; heating said surface, whereby said thin layer with said dopant is desorbed from said surface leaving said dopant on the portions of said surface which were not selectively coated with said thin layer; and growing an epitaxial layer of semiconductive material on said surface.
Claim 3
Dependent Claim
26 words
The method as claimed in claim 1 wherein said step of exposing comprises exposing said surface to a high vacuum in a molecular beam epitaxy chamber.
Claim 4
Dependent Claim
28 words
The method as claimed in claim 1 wherein said step of selectively coating comprises: depositing said element on said surface; and selectively desorbing said element from said surface.
Claim 5
Dependent Claim
24 words
The method as claimed in claim 3 wherein said step of selectively desorbing comprises irradiating selected areas of said surface with a laser beam.
Claim 6
Dependent Claim
25 words
The method as claimed in claim 3 wherein said step of selectively desorbing comprises irradiating selected areas of said surface with an intense photon beam.
Claim 7
Dependent Claim
24 words
The method as claimed in claim 3 wherein said step of selectively desorbing comprises irradiating selected areas of said surface with an electron beam.
Claim 8
Dependent Claim
24 words
The method as claimed in claim 3 wherein said step of selectively desorbing comprises irradiating selected areas of said surface with an ion beam.
Claim 9
Dependent Claim
25 words
The method as claimed in claim 1 wherein said compound semiconductor comprises an Al x Ga 1-x As compound, and wherein said element comprises As.
Claim 10
Dependent Claim
13 words
The method as claimed in claim 1 wherein said dopant material comprises tin.
Claim 11
Dependent Claim
20 words
The method as claimed in claim 1 wherein said element comprises the most volatile constituent element forming said compound semiconductor.
Claim 12
Dependent Claim
23 words
The method as claimed in claim 1 wherein said dopant material is selected from the group consisting of Sn, Si, Ge, and Be.
Claim 13
Independent Claim
139 words
A method of selective area doping an Al x Ga 1-x As semiconductor, comprising the steps of: exposing the surface of an Al x Ga 1-x As semiconductor to a vacuum inside a molecular beam epitaxy chamber; exposing said surface to a flux of As to deposit a thin layer of As on said surface; irradiating a selected area of said surface with a laser beam so that As is desorbed from said selected area; depositing dopant material over said selected area and over said thin layer of As; heating said surface to a temperature of approximately 350 degrees C, whereby said thin layer of As with said dopant material is desorbed from said surface leaving said dopant on said selected area; and growing a layer of Al x Ga 1-x As on said surface by molecular beam epitaxy.
Claim 14
Independent Claim
139 words
A method of selective area doping an Al x Ga 1-x As semiconductor, comprising the steps of: exposing the surface of an Al x Ga 1-x As semiconductor to a vacuum inside a molecular beam epitaxy chamber; exposing said surface to a flux of As to deposit a thin layer of As on said surface; irradiating a selected area of said surface with a laser beam so that As is desorbed from said selected area; depositing dopant material over said selected area and over said thin layer of As; heating said surface to a temperature of approximately 350 degrees C, whereby said thin layer of As with said dopant material is desorbed from said surface leaving said dopant on said selected area; and growing a layer of Al x Ga 1-x As on said surface by molecular beam epitaxy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-09-11 | 1988-03-12 | 1988-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-09-11 | 1992-03-12 | 1992-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-09-11 | 1996-03-12 | 1996-09-11 | $7700.00 | Window Closed / Lapsed |