US4383872A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead
Assignee: US Philips Corp
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Filing: 1980-12-15
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Granted: 1983-05-17
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Expires: 2000-12-15
Abstract
Abstract In the present invention, an epitaxial layer of a doped III-V alloy is grown on a semiconductor substrate by a molecular beam epitaxy process using a molecular beam of lead together with molecular beams of the constituent elements of the doped III-V alloy. The magnitude of the lead flux is sufficient to form and maintain a presence of from 5 to 20% of a monolayer of lead on the growth surface. The technique is directed particularly to ternary and quaternary III-V compositions.
Inventors
- 👤 John S. Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:40
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10D62/854; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/36
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
129 words
A method of forming an epitaxial layer of a doped at least ternary III-V alloy on a semiconductor substrate, the method comprising the steps of placing the semiconductor substrate in a vacuum chamber, reducing the pressure in the vacuum chamber to below atmospheric pressure, maintaining the semiconductor substrate at a temperature in the range from 300° C. to 500° C., and forming the epitaxial layer by directing a plurality of molecular beams containing the constituent elements of the doped material constituting the epitaxial layer and by directing a molecular beam of lead all onto the heated substrate for a time sufficient to grow an epitaxial layer of a desired thickness, said molecular beam of lead forming from 5 to 20% of a monolayer of lead on the growth surface.
Claim 2
Independent Claim
129 words
A method of forming an epitaxial layer of a doped at least ternary III-V alloy on a semiconductor substrate, the method comprising the steps of placing the semiconductor substrate in a vacuum chamber, reducing the pressure in the vacuum chamber to below atmospheric pressure, maintaining the semiconductor substrate at a temperature in the range from 300° C. to 500° C., and forming the epitaxial layer by directing a plurality of molecular beams containing the constituent elements of the doped material constituting the epitaxial layer and by directing a molecular beam of lead all onto the heated substrate for a time sufficient to grow an epitaxial layer of a desired thickness, said molecular beam of lead forming from 5 to 20% of a monolayer of lead on the growth surface.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1, wherein the doped III-V alloy is beryllium-doped gallium indium phosphide.
Claim 4
Independent Claim
29 words
A method as claimed in one of claims 1 or 2, wherein said lead is present in grown layers at less than 5×10 17 atoms per cm 3 .
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1, wherein lead is maintained at the growth surface in approximately 1/10 of a monolayer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-16 | 1986-11-15 | 1987-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-16 | 1990-11-15 | 1991-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-16 | 1994-11-15 | 1995-05-17 | $7700.00 | Window Closed / Lapsed |