US4233092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Utilizing lead compounds of sulphur, selenium and tellurium as dopant sources
Assignee: US Philips Corp
•
Filing: 1979-09-12
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Granted: 1980-11-11
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Expires: 1999-09-12
Abstract
Abstract A method of growing an n-type GaAs layer on a substrate by a molecular beam epitaxy process, the dopant consisting of S, Se or Te. The layer is prepared by directing molecular beams of gallium, arsenic and PbX, where X is S, Se or Te, onto a heated substrate. It has not proved practicable to grow an n-type GaAs layer by molecular beam epitaxy using S, Se or Te as dopant in the form of a molecular beam consisting of elemental S, Se or Te.
Inventors
- 👤 Jeffrey J. Harris
- 👤 Colin E. C. Wood
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/22; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/169; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
48 words
A method of growing an n-type GaAs layer on a substrate by molecular beam epitaxy comprising the step of directing respective molecular beams of gallium, arsenic and a compound defined by PbX onto a heated substrate surface, wherein X represents one of the elements sulphur, selenium and tellurium.
Claim 2
Independent Claim
48 words
A method of growing an n-type GaAs layer on a substrate by molecular beam epitaxy comprising the step of directing respective molecular beams of gallium, arsenic and a compound defined by PbX onto a heated substrate surface, wherein X represents one of the elements sulphur, selenium and tellurium.
Claim 3
Dependent Claim
26 words
A method according to claim 1, wherein the grown n-type GaAs layer contains from 5×10 15 to 5×10 19 atoms of X per cm 3 .
Claim 4
Dependent Claim
27 words
A method according to claim 1, wherein abrupt changes in doping level of said n-type GaAs layer is carried out by changes in the amount of X.
References Cited (Backward Citations)
US2994621A
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US3716424A
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US3751310A
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US3839084A
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US3915765A
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US3941624A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-11-11 | 1984-05-12 | 1984-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-11-11 | 1988-05-12 | 1988-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-11-11 | 1992-05-12 | 1992-11-11 | $7700.00 | Window Closed / Lapsed |