US4273594A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gallium arsenide devices having reduced surface recombination velocity
Assignee: AT&T Inc
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Filing: 1979-10-05
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Granted: 1981-06-16
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Expires: 1999-10-05
Abstract
Abstract Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.
Inventors
- 👤 Adam Heller
- 👤 Harry J. Leamy
- 👤 Barry Miller
- 👤 Ronald J. Nelson
- 👤 Bruce A. Parkinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 08:33
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/18; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10F71/00; H10F71/127; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/904; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
A semiconductor device containing n-type GaAs, said n-type GaAs having a surface, a layer of material disposed on said surface, characterized in that said surface further contains material selected from the group consisting of ruthenium, rhodium, nickel, iridium and lead, said material being present in an amount equivalent to greater than one-hundredth of a monolayer and less than one monolayer.
Claim 2
Dependent Claim
60 words
A semiconductor device containing n-type GaAs, said n-type GaAs having a surface, a layer of material disposed on said surface, characterized in that said surface further contains material selected from the group consisting of ruthenium, rhodium, nickel, iridium and lead, said material being present in an amount equivalent to greater than one-hundredth of a monolayer and less than one monolayer.
Claim 3
Dependent Claim
20 words
A device as recited in claim 1 in which said material is present in an amount less than one monolayer.
Claim 4
Dependent Claim
29 words
A device as recited in claim 2 in which said material is ruthenium and said amount is greater than 0.001 μgm/cm 2 and less than 0.1 μgm/cm 2 .
Claim 5
Dependent Claim
19 words
A device as recited in claim 1 or 3 further characterized in that said layer comprises a noble metal.
Claim 6
Dependent Claim
23 words
A device as recited in claim 4 in which said noble metal is selected from the group consisting of gold, silver and platinum.
Claim 7
Dependent Claim
29 words
A device as recited in claim 4 in which said layer comprises an oxide layer, said oxide layer being disposed between said GaAs surface and said noble metal layer.
References Cited (Backward Citations)
US3340599A
Cited
US4182796A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-15 | 1984-12-15 | 1985-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-15 | 1988-12-15 | 1989-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-15 | 1992-12-15 | 1993-06-16 | $7700.00 | Window Closed / Lapsed |