EP0244081A1
Expired / Lapsed
EP
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Method for forming crystal and crystal article obtained by said method
Assignee: Canon Inc
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Filing: 1987-03-25
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Granted: —
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Expires: 2007-03-25
Abstract
Abstract A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S NDS ) with a small nucleation density and a deposition surface (S NDL ) having a sufficinetly small area for crystal growth only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.
Inventors
- 👤 Takao Yonehara
- 👤 Yasuhiro Naruse
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-23 23:08
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; C; C30; C30B; C30B23/00; C30B23/002; C30B23/02; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B25/18; C30B29/00; C30B29/02; C30B29/04; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2903; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3414; H10P14/3418
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
91 words
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S NDS ) with a small nucleation density and a deposition surface (S NDL ) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.
Claim 2
Independent Claim
91 words
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S NDS ) with a small nucleation density and a deposition surface (S NDL ) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.
Claim 3
Independent Claim
80 words
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having two kinds of deposition surfaces with a sufficiently great nucleation density difference (ΔND), of which the deposition surface (S NDL ) with smaller nucleation density has a sufficiently small area for growth of a single crystal from only a single nucleus to form a stable single nucleus on said deposition surface (S NDL ), thereby growing a single crystal from said single nucleus.
Claim 4
Independent Claim
80 words
A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having two kinds of deposition surfaces with a sufficiently great nucleation density difference (ΔND), of which the deposition surface (S NDL ) with smaller nucleation density has a sufficiently small area for growth of a single crystal from only a single nucleus to form a stable single nucleus on said deposition surface (S NDL ), thereby growing a single crystal from said single nucleus.
Claim 5
Independent Claim
139 words
A method for forming a crystal, which comprises forming, on a substrate having a small deposition surface (S NDS ) with small nucleation density at a small area for a crystal growth from only a single nucleus at a desired position of said deposition surface (S NDS ), a deposition surface (S NDL ) having greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ) by addtiion of a material (M L ) for forming said deposition surface (S NDL ) which is different from the material (M S ) forming said deposition surface (S NDS ), and then applying a crystal forming treatment on said substrate to form a single crystal nucleus on said deposition surface (S NDL ), thereby growing a single crystal from said single nucleus.
Claim 6
Independent Claim
139 words
A method for forming a crystal, which comprises forming, on a substrate having a small deposition surface (S NDS ) with small nucleation density at a small area for a crystal growth from only a single nucleus at a desired position of said deposition surface (S NDS ), a deposition surface (S NDL ) having greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ) by addtiion of a material (M L ) for forming said deposition surface (S NDL ) which is different from the material (M S ) forming said deposition surface (S NDS ), and then applying a crystal forming treatment on said substrate to form a single crystal nucleus on said deposition surface (S NDL ), thereby growing a single crystal from said single nucleus.
Claim 7
Dependent Claim
31 words
A method according to claim 1, 2 or 3, wherein said deposition surface (S NDL ) is arranged in a plural number as sectionalized within said deposition surface (S NDS ).
Claim 8
Dependent Claim
28 words
A method according to claim 1, 2, or 3, wherein said deposition surface (S NDL ) is arranged as regularly sectionalized within said deposition surface (S NDS ).
Claim 9
Dependent Claim
28 words
A method according to claim 1, 2, or 3, wherein said deposition surface (S NDL ) is arranged as sectionalized irregularly within said deposition surface (S NDS ).
Claim 10
Dependent Claim
31 words
A method according to claim 1, 2 or 3, wherein said deposition surface (S NDL ) is arranged in a plural number as sectionalized on said deposition surface (S NDS ).
Claim 11
Dependent Claim
28 words
A method according to claim 1, 2, or 3, wherein said deposition surface (S NDL ) is arranged as sectionalized regularly on said deposition surface (S NDS ).
Claim 12
Dependent Claim
28 words
A method according to claim 1, 2, or 3 wherein said deposition surface (S NDL ) is arranged as sectionalized irregularly on said deposition surface (S NDS ).
Claim 13
Independent Claim
33 words
A method according to any of claims 1 to 9, wherein said deposition surface (S NDL ) is formed of a material different from the material forming said deposition surface (S NDS ).
Claim 14
Independent Claim
19 words
A method according to any preceding claim, wherein said crystal forming treatment is conducted according to the CVD method.
Claim 15
Independent Claim
20 words
A method according to any preceding claim, wherein said deposition surface (S NDS ) is formed of an amorphous material.
Claim 16
Dependent Claim
37 words
A method according to claim 1, 2 or 3, wherein said deposition surface (S NDL ) is provided as sectionalized in a plural number, and single crystals are grown from said respective deposition surfaces (S NDL ).
Claim 17
Dependent Claim
34 words
A method according to claim 13, wherein the single crystals grown from said respective deposition surfaces (S NDL ) are subjected to overgrowth in the direction of said respective deposited surfaces (S NDL ).
Claim 18
Dependent Claim
38 words
A method according to claim 13, wherein the single crystals grown from the respective deposition surfaces (S NDL ) are permitted to grow to the sizes until they are contacted between the adjacent deposition surfaces (S NDL ).
Claim 19
Independent Claim
22 words
A method according to any preceding claim, wherein said deposition surface (S NDL ) is formed according to the ion implantation method.
Claim 20
Dependent Claim
30 words
A method according to claim 1, wherein said deposition surface (S NDS ) is formed of silicon oxide and said deposition surface (S NDL ) is formed of silicon nitride.
Claim 21
Independent Claim
39 words
A method according to any of claims 1 to 9 or 11 to 16, wherein said deposition surface (S NDL ) is formed of a material obtained by modification of the material forming said deposition surface (S NDS ).
Claim 22
Dependent Claim
88 words
A crystal article, comprising a substrate having a deposition surface (S NDS ) with small nucleation density and a deposition surface (S NDL ) arranged adjacent to said deposition surface (S NDS ) having a sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ), and a single crystal which grows from said single nucleus and covers sufficiently over said deposition surface (S NDL ).
Claim 23
Dependent Claim
88 words
A crystal article, comprising a substrate having a deposition surface (S NDS ) with small nucleation density and a deposition surface (S NDL ) arranged adjacent to said deposition surface (S NDS ) having a sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said deposition surface (S NDS ), and a single crystal which grows from said single nucleus and covers sufficiently over said deposition surface (S NDL ).
Claim 24
Dependent Claim
20 words
A crystal article according to claim 19, wherein said deposition surface (S NDL ) is arranged in a plural number.
Claim 25
Dependent Claim
23 words
2l. A crystal article according to claim 19, wherein said deposition surface (S NDL ) is arranged as sectionalized in a plural number.
Claim 26
Dependent Claim
30 words
A crystal article according to claim 19, wherein said deposition surface (S NDL ) is arranged in a plural number as sectionalized regularly within said deposition surface (S NDS ).
Claim 27
Dependent Claim
30 words
A crystal article according to claim 19, wherein said deposition surface (S NDL ) is arranged in a plural number as sectionalized irregularly within said deposition surface (S NDS ).
Claim 28
Dependent Claim
34 words
A crystal article according to claim 20, wherein the single crystals grown from the respective deposition surfaces (S NDL ) contact with the single crystals grown from the adjacent deposition surfaces (S NDL ).
Claim 29
Dependent Claim
36 words
A crystal article according to claim 20, wherein the single crystals grown from the respective depositon surfaces (S NDL ) are spatially apart from the single crystals grown from the adjacent deposition surfaces (S NDL ).
Claim 30
Dependent Claim
66 words
A crystal article, comprising a crystal forming surface, a nucleation surface (S NDL ) formed of a material with sufficiently greater nucleation density (ND) than the amorphous material forming said crystal surface having a sufficiently small area to the extent that only a single nucleus can grow provided on said crystal forming surface, and a single crystal grown singly on said nucleation surface (S NDL ).
Claim 31
Dependent Claim
66 words
A crystal article, comprising a crystal forming surface, a nucleation surface (S NDL ) formed of a material with sufficiently greater nucleation density (ND) than the amorphous material forming said crystal surface having a sufficiently small area to the extent that only a single nucleus can grow provided on said crystal forming surface, and a single crystal grown singly on said nucleation surface (S NDL ).
Claim 32
Dependent Claim
35 words
A crystal article according to claim 26, wherein said crystal forming surface has a concave portion with a desired shape and said single crystal is formed in shape of an island embedding said concave portion.
Claim 33
Dependent Claim
38 words
A crystal article according to claim 26, wherein said nucleation surface (S NDL ) is provided in a plural number with desired intervals, and having grain boundaries approximately at the center between said nucleation surfaces (S NDL ).
Claim 34
Independent Claim
98 words
A method for forming a crystal which forms a crystal by utilizing the difference in nucleation density between the crystal forming materials according to the kinds of the materials for forming the crystal forming surface, which comprises forming a nucleation surface (S NDL ) having a sufficiently small area so that only a single nucleus may grow with a material having sufficiently greater nucleation density than the material forming said crystal forming surface, forming only a single nucleus on said nucleation surface (S NDL ) and growing a single crystal from said single nucleus, thereby forming a crystal.
Claim 35
Independent Claim
98 words
A method for forming a crystal which forms a crystal by utilizing the difference in nucleation density between the crystal forming materials according to the kinds of the materials for forming the crystal forming surface, which comprises forming a nucleation surface (S NDL ) having a sufficiently small area so that only a single nucleus may grow with a material having sufficiently greater nucleation density than the material forming said crystal forming surface, forming only a single nucleus on said nucleation surface (S NDL ) and growing a single crystal from said single nucleus, thereby forming a crystal.
Claim 36
Dependent Claim
44 words
A method for forming a crystal according to claim 29, wherein said nucleation surface (S NDL ) is formed by depositing a material having sufficiently greater nucleation density than the material forming said crystal forming surface, and thereafter patterning sufficiently finely the deposited material.
Claim 37
Dependent Claim
56 words
3l. A method for forming a crystal according to claim 29, wherein said nucleation surface (S NDL ) is formed by ion implanting a material which modifies the material forming the above crystal forming surface to a material having sufficiently greater nucleation density than said material into a sufficiently fine region of said crystal forming surface.
Claim 38
Independent Claim
133 words
A method for forming a crystal by forming selectively a single crystal layer by utilizing the difference in nucleation density between the crystal forming materials according to the kinds of the materials for forming crystal forming surfaces, preparing said crystal forming surface formed of an amorphous material, providing nucleation surfaces (S NDL ) on said crystal forming surface with a material having sufficiently greater nucleation density than the material forming the crystal forming surface so as to have a sufficiently small area to form only a single nucleus, and with a distance of the required size of said single crystal layer or more, and then forming only a single nucleus on said nucleation surface (S NDL ) to grow a single crystal from said single nucleus, thereby forming selectively a single crystal layer.
Claim 39
Independent Claim
133 words
A method for forming a crystal by forming selectively a single crystal layer by utilizing the difference in nucleation density between the crystal forming materials according to the kinds of the materials for forming crystal forming surfaces, preparing said crystal forming surface formed of an amorphous material, providing nucleation surfaces (S NDL ) on said crystal forming surface with a material having sufficiently greater nucleation density than the material forming the crystal forming surface so as to have a sufficiently small area to form only a single nucleus, and with a distance of the required size of said single crystal layer or more, and then forming only a single nucleus on said nucleation surface (S NDL ) to grow a single crystal from said single nucleus, thereby forming selectively a single crystal layer.
Claim 40
Dependent Claim
28 words
A method for forming a crystal according to claim 32, wherein said nucleation surfaces (S NDL ) are arranged in shape of a lattice on said depositon surface.
Claim 41
Dependent Claim
80 words
A crystal article, comprising a substrate for formation of crystal having a nonnucleation surface (S NDS ) formed of an amorphous material and a nucleation surface (S NDL ) formed of a material different from said amorphous material having greater nucleation density (ND) than said nonnucleation surface (S NDS ) relative to the material for forming the crystal to be formed, and single crystals formed corresponding one by one to said nucleation surfaces (S NDL ) on said nucleation surfaces.
Claim 42
Dependent Claim
80 words
A crystal article, comprising a substrate for formation of crystal having a nonnucleation surface (S NDS ) formed of an amorphous material and a nucleation surface (S NDL ) formed of a material different from said amorphous material having greater nucleation density (ND) than said nonnucleation surface (S NDS ) relative to the material for forming the crystal to be formed, and single crystals formed corresponding one by one to said nucleation surfaces (S NDL ) on said nucleation surfaces.
Claim 43
Dependent Claim
13 words
A crystal article according to claim 34, wherein said amorphous material is SiO₂.
Claim 44
Dependent Claim
16 words
A crystal article according to claim 34, wherein said single crystal is a semiconductive single crystal.
Claim 45
Dependent Claim
16 words
A crystal article according to claim 34, wherein said single crystal is a metallic single crystal.
Claim 46
Dependent Claim
16 words
A crystal article according to claim 34, wherein said single crystal is an insulating single crystal.
Claim 47
Dependent Claim
21 words
An electronic device produced by utilizing a crystal article according to any of Claims 19 to 28 or 34 to 37.
References Cited (Backward Citations)
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