EP0240309A2 — Method for forming crystal and crystal article ob…

Claim 1

Independent Claim 89 words

A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), thereby growing a single crystal from said single nucleus.

Claim 2

Independent Claim 89 words

A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), thereby growing a single crystal from said single nucleus.

Claim 3

Independent Claim 94 words

A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having two kinds of crystal formation surfaces with a sufficiently great nucleation density difference (ΔND), of which the nucleation surfaces (S NDL ) with greater nucleation density is exposed from the nonnucleation surface (S NDS ) with smaller nucleation density and has a sufficiently small area for a single crystal growing from only a single nucleus to form a stable single nucleus on said nucleation surfaces (S NDL ), thereby growing a single crystal from said single nucleus.

Claim 4

Independent Claim 94 words

A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having two kinds of crystal formation surfaces with a sufficiently great nucleation density difference (ΔND), of which the nucleation surfaces (S NDL ) with greater nucleation density is exposed from the nonnucleation surface (S NDS ) with smaller nucleation density and has a sufficiently small area for a single crystal growing from only a single nucleus to form a stable single nucleus on said nucleation surfaces (S NDL ), thereby growing a single crystal from said single nucleus.

Claim 5

Independent Claim 142 words

A method for forming crystal, which comprises forming a nucleation surface (S NDL ) at a desired site of a base substrate surface with large nucleation density exposed as a small area for a crystal growing from only a single nucleus by providing onto said base substrate surface a nonnucleation surface (S NDS ) having smaller nucleation density (ND S ) than nucleation density (ND L ) of said nucleation surface (S NDL ) by addition of a material (M S ) for forming said nonnucleation surface (S NDS ) which is different from the material (M L ) forming said nucleation surface (S NDL ) to obtain a substrate, and then applying a crystal forming treatment on said substrate for form a single crystal nucleus on said nucleation surface (S NDL ), thereby growing a single srystal from said single nucleus.

Claim 6

Independent Claim 142 words

A method for forming crystal, which comprises forming a nucleation surface (S NDL ) at a desired site of a base substrate surface with large nucleation density exposed as a small area for a crystal growing from only a single nucleus by providing onto said base substrate surface a nonnucleation surface (S NDS ) having smaller nucleation density (ND S ) than nucleation density (ND L ) of said nucleation surface (S NDL ) by addition of a material (M S ) for forming said nonnucleation surface (S NDS ) which is different from the material (M L ) forming said nucleation surface (S NDL ) to obtain a substrate, and then applying a crystal forming treatment on said substrate for form a single crystal nucleus on said nucleation surface (S NDL ), thereby growing a single srystal from said single nucleus.

Claim 7

Dependent Claim 24 words

A method according to claim 1, 2 or 3, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized.

Claim 8

Dependent Claim 21 words

A method according to claim 1, 2 or 3, wherein said nucleation surfaces (S NDL ) are arranged as regularly sectionalized.

Claim 9

Independent Claim 21 words

A method according to claim l, 2 or 3, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly.

Claim 10

Dependent Claim 32 words

A method according to claim 1, 2 or 3, wherin a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized and underlying said nnonucleation surface (S NDS ).

Claim 11

Dependent Claim 29 words

A method according to claim 1, 2 or 3, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized regularly and underlying said nonnucleation surface (S NDS ).

Claim 12

Dependent Claim 29 words

A method according to claim 1, 2 or 3, wherein said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly and underlying said nonnucleation surface (S NDS ).

Claim 13

Independent Claim 19 words

A method according to any preceding claim, wherein said nucleation surface (S NDL ) is formed of modified material.

Claim 14

Independent Claim 33 words

A method according to any of claims 1 to 9, wherein said nucleation surface (S NDL ) is formed of a material different from the material forming said nonnucleation surface (S NDS ).

Claim 15

Independent Claim 19 words

A method according to any preceding claim, wherein said crystal forming treatment is conducted according to the CVD method.

Claim 16

Independent Claim 23 words

A method according to any of claims 1 to 9, wherein said nonnucleation surface (S NDS ) is formed of an amorphous material.

Claim 17

Dependent Claim 36 words

A method according to claim 1, 2 or 3, wherein said number of said nucleation surfaces (S NDL ) are provided as sectionalized, and single crystals are grown from said respective nucleation surfaces (S NDL ).

Claim 18

Dependent Claim 34 words

A method according to claim 14, wherein the single crystals grown from said respective nucleation surfaces (S NDL ) are subjected to overgrowth in the direction of said respective nucleation surfaces (S NDL ).

Claim 19

Dependent Claim 38 words

A method according to claim 14, wherein the single crystals grown from the respective nucleation surfaces (S NDL ) are permitted to grow to the sizes until they are contacted between the adjacent nucleation surfaces (S NDL ).

Claim 20

Dependent Claim 21 words

A method according to claim 10, wherein said nucleation surface (S NDL ) is formed according to the ion implantation method.

Claim 21

Dependent Claim 30 words

A method according to claim 11, wherein said nonnucleation surface (S NDS ) is formed of silicon oxide and said nucleation surface (S NDL ) is formed of silicon nitride.

Claim 22

Dependent Claim 88 words

A crystal article, comprising a substrate having as a convex surface a nonnucleation surface (S NDS ) with small nucleation density and as a concave surface a nucleation surface (S NDL ) having a sufficiently small area for a crystal growing from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), and a single crystal which grows from said single nucleus and covers excessively over said deposition surface (S NDL ).

Claim 23

Dependent Claim 88 words

A crystal article, comprising a substrate having as a convex surface a nonnucleation surface (S NDS ) with small nucleation density and as a concave surface a nucleation surface (S NDL ) having a sufficiently small area for a crystal growing from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), and a single crystal which grows from said single nucleus and covers excessively over said deposition surface (S NDL ).

Claim 24

Dependent Claim 20 words

A crystal article according to claim 19, wherein a plural number of said nucleation surface (S NDL ) are arranged.

Claim 25

Dependent Claim 22 words

A crystal article according to claim 19, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized.

Claim 26

Dependent Claim 23 words

A crystal article according to claim 19, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized regularly.

Claim 27

Dependent Claim 23 words

A crystal article according to claim 19, wherein a plural number of said nucleation surfaces (S NDL ) are arranged as sectionalized irregularly.

Claim 28

Dependent Claim 34 words

A crystal article according to claim 20, wherein the single crystals grown from the respective nucleation surfaces (S NDL ) contact with the single crystals grown from the adjacent nucleation surfaces (S NDL ).

Claim 29

Dependent Claim 36 words

A crystal article according to claim 20, wherein the single crystals grown from the respective nucleation surfaces (S NDL ) are spatially apart from the single crystals grown from the adjacent nucleation surfaces (S NDL ).

Claim 30

Dependent Claim 65 words

A crystal article, comprising a crystal forming surface having as a concavity a nucleation surface (S NDL ) formed of a material with sufficiently greater nucleation density (ND) than the amorphous material constituting said crystal forming surface having a sufficiently small area to the extent that only a single nucleus can grow and a single crystal grown singly on said nucleation surface (S NDL ).

Claim 31

Dependent Claim 65 words

A crystal article, comprising a crystal forming surface having as a concavity a nucleation surface (S NDL ) formed of a material with sufficiently greater nucleation density (ND) than the amorphous material constituting said crystal forming surface having a sufficiently small area to the extent that only a single nucleus can grow and a single crystal grown singly on said nucleation surface (S NDL ).

Claim 32

Dependent Claim 35 words

A crystal article according to claim 26, wherein said crystal forming surface has a concave portion with a desired shape and said single crystal is formed in shape of an island embedding said concave portion.

Claim 33

Dependent Claim 39 words

A crystal article according to claim 26, wherein a plural number of said nucleation surfaces (S NDL ) are provided with desired intervals and grain boundaries are formed approximately at the center between said nucleation surfaces (S NDL ).

Claim 34

Independent Claim 124 words

A method for forming a crystal by utilizing the difference in nucleation density between the crystal forming materials depending on the kinds of the materials for forming the crystal forming surface, which comprises forming selectively on a base substrate a thin film of a material (M S ) with smaller nucleation density than the material (M L ) of the surface of base substrate so as to leave an uncovered area on the surface of base substrate to thereby form a nucleation surface (S NDL ) having a sufficiently small area so that only a single nucleus may grow forming only a single nucleus on said nucleation surface (S NDL ) and growing a single crystal from said single nucleus, thereby forming a crystal.

Claim 35

Independent Claim 124 words

A method for forming a crystal by utilizing the difference in nucleation density between the crystal forming materials depending on the kinds of the materials for forming the crystal forming surface, which comprises forming selectively on a base substrate a thin film of a material (M S ) with smaller nucleation density than the material (M L ) of the surface of base substrate so as to leave an uncovered area on the surface of base substrate to thereby form a nucleation surface (S NDL ) having a sufficiently small area so that only a single nucleus may grow forming only a single nucleus on said nucleation surface (S NDL ) and growing a single crystal from said single nucleus, thereby forming a crystal.

Claim 36

Dependent Claim 44 words

A method for forming a crystal according to claim 29, wherein said nucleation surface (S NDL ) is formed by depositing a material having sufficiently greater nucleation density than the material forming said crystal forming surface, and thereafter patterning sufficiently finely the deposited material.

Claim 37

Dependent Claim 55 words

A method for forming a crystal according to claim 29, wherein said nucleation surface (S NDL ) is formed by ion implanting a material which modifies the material forming the above crystal forming surface to a material having sufficiently greater nucleation density than said material into a sufficiently fine region of said crystal forming suface.

Claim 38

Independent Claim 146 words

A method for forming a crystal by forming selectively a single crystal layer by utilizing the difference in nucleation density between the crystal forming materials depending on the kinds of the materials for forming crystal forming surfaces, which comprises forming selectively on a base substrate having a surface with sufficiently large nucleation density of an amorphous material a thin film of a material with smaller nucleation density than said amorphous material so as to leave an exposed area of the surface of said base substrate to provide a nucleation surface having a sufficiently small area to form only a single nucleus, and with a distance of the required size of said single crystal layer or more, and then forming only a single nucleus on said nucleation surface (S NDL ) to grow a single crystal from said single nucleus, thereby forming selectively a single crystal layer.

Claim 39

Independent Claim 146 words

A method for forming a crystal by forming selectively a single crystal layer by utilizing the difference in nucleation density between the crystal forming materials depending on the kinds of the materials for forming crystal forming surfaces, which comprises forming selectively on a base substrate having a surface with sufficiently large nucleation density of an amorphous material a thin film of a material with smaller nucleation density than said amorphous material so as to leave an exposed area of the surface of said base substrate to provide a nucleation surface having a sufficiently small area to form only a single nucleus, and with a distance of the required size of said single crystal layer or more, and then forming only a single nucleus on said nucleation surface (S NDL ) to grow a single crystal from said single nucleus, thereby forming selectively a single crystal layer.

Claim 40

Dependent Claim 28 words

A method for forming a crystal according to claim 32, wherein said nucleation surfaces (S NDL ) are arranged in shape of a lattice on said deposition surface.

Claim 41

Dependent Claim 89 words

A crystal article, comprising a substrate for formation of crystal having as a convex surface a nonnucleation surface (S NDS ) formed of an amorphous material and as a concave surface and nucleation surface (S NDL ) formed of a material different from said amorphous material having greater nucleation density (ND) than said nonnucleation surface (S NDS ) in relation to the material for forming the crystal to be formed, and single crystals formed corresponding one by one to said nucleation surfaces (S NDL ) on said nucleation surfaces.

Claim 42

Dependent Claim 89 words

A crystal article, comprising a substrate for formation of crystal having as a convex surface a nonnucleation surface (S NDS ) formed of an amorphous material and as a concave surface and nucleation surface (S NDL ) formed of a material different from said amorphous material having greater nucleation density (ND) than said nonnucleation surface (S NDS ) in relation to the material for forming the crystal to be formed, and single crystals formed corresponding one by one to said nucleation surfaces (S NDL ) on said nucleation surfaces.

Claim 43

Dependent Claim 13 words

A crystal article according to claim 34, wherein said amorphous material is SiO₂.

Claim 44

Dependent Claim 16 words

A crystal article according to claim 34, wherein said single crystal is a semiconductive single crystal.

Claim 45

Dependent Claim 16 words

A crystal article according to claim 34, wherein said single crystal is a metallic single crystal.

Claim 46

Dependent Claim 16 words

A crystal article according to claim 34, wherein said single crystal is an insulating single crystal.

Claim 47

Dependent Claim 21 words

An electronic device produced by utilizing a crystal article according to any of claims 19 to 28 or 34 to 38.

Method for forming crystal and crystal article obtained by said method

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