US5534716A
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Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-08-23
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Granted: 1996-07-09
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Expires: 2014-08-23
Abstract
Abstract A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, TFT provided such that the crystallization direction is roughly parallel to a current-flow between a source and a drain, and TFT provided such that the crystallization direction is roughly vertical to a current-flow between a source and a drain are manufactured. Therefore, TFT capable of conducting a high speed operation and TFT having a low leak current are formed on the same substrate.
Inventors
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10D; H10D30/00; H10D30/60; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/40; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; H10D86/0229; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S438/00; Y10S438/982
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
105 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction.
Claim 2
Dependent Claim
105 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction.
Claim 3
Dependent Claim
19 words
The device of claim 1 wherein the first angle is approximately 0° and the second angle is approximately 90°.
Claim 4
Dependent Claim
22 words
The device of claim 1 wherein the thin film transistors each further has a gate electrode formed on the silicon oxide layer.
Claim 5
Dependent Claim
28 words
The device of claim 3 wherein the crystalline silicon region is used as an active layer, and the silicon oxide layer is used as a gate insulating layer.
Claim 6
Dependent Claim
157 words
A semiconductor device for an active matrix type liquid crystal display having a peripheral circuit portion and a pixel portion comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors is provided on the peripheral circuit portion and at least another one of the thin film transistors is provided on the pixel portion, and wherein the thin film transistor provided on the peripheral circuit portion has a first angle formed between a carrier moving direction and the crystal growth direction and the thin film transistor provided on the pixel portion has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction.
Claim 7
Dependent Claim
157 words
A semiconductor device for an active matrix type liquid crystal display having a peripheral circuit portion and a pixel portion comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors is provided on the peripheral circuit portion and at least another one of the thin film transistors is provided on the pixel portion, and wherein the thin film transistor provided on the peripheral circuit portion has a first angle formed between a carrier moving direction and the crystal growth direction and the thin film transistor provided on the pixel portion has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction.
Claim 8
Dependent Claim
19 words
The device of claim 5 wherein the first angle is approximately 0° and the second angle is approximately 90°.
Claim 9
Dependent Claim
22 words
The device of claim 5 wherein the thin film transistors each further has a gate electrode formed on the silicon oxide layer.
Claim 10
Dependent Claim
28 words
The device of claim 7 wherein the crystalline silicon region is used as an active layer, and the silicon oxide layer is used as a gate insulating layer.
Claim 11
Dependent Claim
93 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each has a crystalline silicon region crystal-grown in a crystal growth direction and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has the crystalline silicon region having the crystal growth direction which coincides with a carrier moving direction and at least another one of the thin film transistors has the crystalline silicon region which is different from the carrier moving direction.
Claim 12
Dependent Claim
93 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each has a crystalline silicon region crystal-grown in a crystal growth direction and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has the crystalline silicon region having the crystal growth direction which coincides with a carrier moving direction and at least another one of the thin film transistors has the crystalline silicon region which is different from the carrier moving direction.
Claim 13
Dependent Claim
117 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction, and wherein the crystalline silicon region includes an element which promotes crystallization.
Claim 14
Dependent Claim
117 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction, and wherein the crystalline silicon region includes an element which promotes crystallization.
Claim 15
Dependent Claim
19 words
The device of claim 10 wherein the first angle is approximately 0° and the second angle is approximately 90°.
Claim 16
Dependent Claim
138 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction, and wherein the crystalline silicon region includes an element which promotes crystallization and a concentration of the element included in the crystalline silicon region is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 17
Dependent Claim
138 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction, and wherein the crystalline silicon region includes an element which promotes crystallization and a concentration of the element included in the crystalline silicon region is 1×10 17 to 1×10 20 atoms/cm 3 .
Claim 18
Dependent Claim
19 words
The device of claim 12 wherein the first angle is approximately 0° and the second angle is approximately 90°.
Claim 19
Dependent Claim
113 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction, and wherein the crystalline silicon region includes nickel.
Claim 20
Dependent Claim
113 words
A semiconductor device comprising: a substrate; and a plurality of thin film transistors formed on the substrate, wherein the thin film transistors each have a crystalline silicon region crystal-grown in a crystal growth direction parallel to the substrate and a silicon oxide layer covering the crystalline silicon region, wherein at least one of the thin film transistors has a first angle formed between a carrier moving direction and the crystal growth direction and at least another one of the thin film transistors has a second angle which is different from the first angle and formed between the carrier moving direction and the crystal growth direction, and wherein the crystalline silicon region includes nickel.
Claim 21
Dependent Claim
19 words
The device of claim 14 wherein the first angle is approximately 0° and the second angle is approximately 90°.
Claim 22
Dependent Claim
26 words
The device of claim 14 wherein a concentration of the nickel included in the crystalline silicon region is 1×10 17 to 1×10 20 atoms/cm 3 .
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-07-09 | 2000-01-08 | 2000-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-09 | 2004-01-08 | 2004-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-09 | 2008-01-08 | 2008-07-09 | $7700.00 | Window Closed / Lapsed |