Patent US6011277A successfully refreshed from Google Patents.
US6011277A
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Gate insulated field effect transistors and method of manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1998-09-09
•
Granted: 2000-01-04
•
Expires: 2018-09-09
Abstract
Abstract A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6733; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/675; H10D30/6757; H10D86/00; H10D86/40; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245
Claims Analysis
Total Claims: 68
Claim 1
Independent Claim
135 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least the channel region of said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 .
Claim 2
Dependent Claim
135 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least the channel region of said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 .
Claim 3
Dependent Claim
36 words
The device according to claim 1 wherein said thin film transistor is of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 4
Dependent Claim
40 words
The device according to claim 1 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 5
Dependent Claim
24 words
The device according to claim 1 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 6
Dependent Claim
13 words
The device according to claim 1 wherein said device is a reflection type.
Claim 7
Dependent Claim
13 words
The device according to claim 1 wherein said device is a transmission type.
Claim 8
Dependent Claim
16 words
The device according to claim 1 wherein said semiconductor layer comprises crystalline silicon doped with hydrogen.
Claim 9
Dependent Claim
150 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein the channel region of said semiconductor layer and at least portions of said pair of impurity regions in the vicinity of said channel region contain an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atom/cm 3 .
Claim 10
Dependent Claim
150 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein the channel region of said semiconductor layer and at least portions of said pair of impurity regions in the vicinity of said channel region contain an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atom/cm 3 .
Claim 11
Dependent Claim
36 words
The device according to claim 8 wherein said thin film transistor is of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 12
Dependent Claim
40 words
The device according to claim 8 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 13
Dependent Claim
24 words
The device according to claim 8 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 14
Dependent Claim
13 words
The device according to claim 8 wherein said device is a reflection type.
Claim 15
Dependent Claim
13 words
The device according to claim 8 wherein said device is a transmission type.
Claim 16
Dependent Claim
16 words
The device according to claim 8 wherein said semiconductor layer comprises crystalline silicon doped with hydrogen.
Claim 17
Dependent Claim
145 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at lease one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least the channel region of said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and said signal line is completely covered by said pixel electrode.
Claim 18
Dependent Claim
145 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at lease one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least the channel region of said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and said signal line is completely covered by said pixel electrode.
Claim 19
Dependent Claim
36 words
The device according to claim 15 wherein said thin film transistor is of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 20
Dependent Claim
40 words
The device according to claim 15 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 21
Dependent Claim
24 words
The device according to claim 15 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 22
Dependent Claim
13 words
The device according to claim 15 wherein said device is a reflection type.
Claim 23
Dependent Claim
13 words
The device according to claim 15 wherein said device is a transmission type.
Claim 24
Dependent Claim
16 words
The device according to claim 15 wherein said semiconductor layer comprises crystalline silicon doped with hydrogen.
Claim 25
Dependent Claim
153 words
A liquid crystal device comprising; a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least the channel region of said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and said at least one signal line extends below a middle portion of said at least one pixel electrode.
Claim 26
Dependent Claim
153 words
A liquid crystal device comprising; a substrate having an insulating surface; at least one thin film transistor comprising a semiconductor layer formed on said insulating surface, said semiconductor layer having therein at least a channel region and a pair of impurity regions; at least one signal line for supplying signals to said at least one thin film transistor; an interlayer insulating film comprising an organic material over said substrate covering said at least one thin film transistor and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least the channel region of said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and said at least one signal line extends below a middle portion of said at least one pixel electrode.
Claim 27
Dependent Claim
36 words
The device according to claim 22 wherein said thin film transistor is of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 28
Dependent Claim
40 words
The device according to claim 22 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 29
Dependent Claim
23 words
The device according to claim 22 wherein said liquid crystal material comprises a nematic crystal of guest host type or dielectric anisotropic type.
Claim 30
Dependent Claim
13 words
The device according to claim 22 wherein said device is a reflection type.
Claim 31
Dependent Claim
13 words
The device according to claim 22 wherein said device is a transmission type.
Claim 32
Dependent Claim
16 words
The device according to claim 22 wherein said semiconductor layer comprises crystalline silicon doped with hydrogen.
Claim 33
Dependent Claim
80 words
A semiconductor device comprising: a substrate having an insulating surface; a thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and baron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 34
Dependent Claim
80 words
A semiconductor device comprising: a substrate having an insulating surface; a thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and baron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 35
Dependent Claim
36 words
The device according to claim 29 wherein said thin film transistor is of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 36
Dependent Claim
16 words
The device according to claim 29 wherein said semiconductor layer comprises crystalline silicon doped with hydrogen.
Claim 37
Dependent Claim
18 words
The device according to claim 29 wherein said thin film transistor is an N-channel type thin film transistor.
Claim 38
Dependent Claim
18 words
The device according to claim 29 wherein said thin film transistor is a P-channel type thin film transistor.
Claim 39
Dependent Claim
114 words
A semiconductor device comprising: a substrate having an insulating surface; an N-channel type thin film transistor and a P-channel type thin film transistor, each thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween, wherein said semiconductor layer contains impurity element of carbon, oxygen and nitrogen at a concentration not lower 1×10 19 atoms/cm 3 ; wherein the semiconductor layer of at least one of said N-channel type thin film transistor and said P-channel type thin film transistor contain boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 40
Dependent Claim
114 words
A semiconductor device comprising: a substrate having an insulating surface; an N-channel type thin film transistor and a P-channel type thin film transistor, each thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween, wherein said semiconductor layer contains impurity element of carbon, oxygen and nitrogen at a concentration not lower 1×10 19 atoms/cm 3 ; wherein the semiconductor layer of at least one of said N-channel type thin film transistor and said P-channel type thin film transistor contain boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 41
Dependent Claim
15 words
The device according to claim 34 wherein said semiconductor layer comprises crystalline doped with hydrogen.
Claim 42
Dependent Claim
83 words
A semiconductor device comprising: a substrate having an insulating surface; an inverted staggered type thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 43
Dependent Claim
83 words
A semiconductor device comprising: a substrate having an insulating surface; an inverted staggered type thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 44
Dependent Claim
18 words
The device according to claim 36 wherein said thin film transistor is an N-channel type thin film transistor.
Claim 45
Dependent Claim
18 words
The device according to claim 36 wherein said thin film transistor is a P-channel type thin film transistor.
Claim 46
Dependent Claim
101 words
A liquid crystal device comprising: a substrate having an insulating surface; a thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; a pixel electrode electrically connected to said thin film transistor; and a liquid crystal layer adjacent to said pixel electrode, wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 47
Dependent Claim
101 words
A liquid crystal device comprising: a substrate having an insulating surface; a thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; a pixel electrode electrically connected to said thin film transistor; and a liquid crystal layer adjacent to said pixel electrode, wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms/cm 3 and boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 48
Dependent Claim
18 words
The device according to claim 39 wherein said thin film transistor is an N-channel type thin film transistor.
Claim 49
Dependent Claim
18 words
The device according to claim 39 wherein said thin film transistor ia a P-channel type thin film transistor.
Claim 50
Dependent Claim
40 words
The device according to claim 39 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 51
Dependent Claim
24 words
The device according to claim 39 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 52
Dependent Claim
13 words
The device according to claim 39 wherein said device is a reflection type.
Claim 53
Dependent Claim
13 words
The device according to claim 39 wherein said device is a transmission type.
Claim 54
Dependent Claim
137 words
A liquid crystal device comprising: a substrate having an insulating surface; an N-channel type thin film transistor and a P-channel type thin film transistor, each thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate, electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween, wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentrating not lower than 1×10 19 atoms/cm 3 ; a pixel electrode electrically connected to said thin film transistor; and a liquid crystal layer adjacent to sad pixel electrode, wherein the semiconductor layer of at least one of sad N-channel type thin film transistor and said P-channel type thin film transistor contains boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 55
Dependent Claim
137 words
A liquid crystal device comprising: a substrate having an insulating surface; an N-channel type thin film transistor and a P-channel type thin film transistor, each thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate, electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween, wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentrating not lower than 1×10 19 atoms/cm 3 ; a pixel electrode electrically connected to said thin film transistor; and a liquid crystal layer adjacent to sad pixel electrode, wherein the semiconductor layer of at least one of sad N-channel type thin film transistor and said P-channel type thin film transistor contains boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 56
Dependent Claim
16 words
The device according to claim 46 wherein said semiconductor layer comprises crystalline silicon doped with hydrogen.
Claim 57
Dependent Claim
40 words
The device according to claim 46 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 58
Dependent Claim
24 words
The device according to claim 46 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 59
Dependent Claim
13 words
The device according to claim 46 wherein said device is a reflection type.
Claim 60
Dependent Claim
13 words
The device according to claim 46 wherein said device is a transmission type.
Claim 61
Dependent Claim
118 words
A liquid crystal device comprising: a substrate having an insulating surface; a thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; an organic resin film formed over said thin film transistor; a pixel electrode formed over said organic resin film electrically connected to said thin film transistor, and a liquid crystal layer adjacent to said pixel electrode, wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms cm/ 3 and boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 62
Dependent Claim
118 words
A liquid crystal device comprising: a substrate having an insulating surface; a thin film transistor including at least a semiconductor layer comprising silicon formed on said insulating surface and a gate electrode adjacent to said semiconductor layer with a gate insulating film interposed therebetween; an organic resin film formed over said thin film transistor; a pixel electrode formed over said organic resin film electrically connected to said thin film transistor, and a liquid crystal layer adjacent to said pixel electrode, wherein said semiconductor layer contains an impurity element of carbon, oxygen and nitrogen at a concentration not lower than 1×10 19 atoms cm/ 3 and boron at a concentration from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 63
Dependent Claim
18 words
The device according to claim 52 wherein said thin film transistor is an N-channel type thin film transistor.
Claim 64
Dependent Claim
18 words
The device according to claim 52 wherein said thin film transistor is a P-channel type thin film transistor.
Claim 65
Dependent Claim
40 words
The device according to claim 52 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 66
Dependent Claim
24 words
The device according to claim 52 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 67
Dependent Claim
13 words
The device according to claim 52 wherein said device is a reflection type.
Claim 68
Dependent Claim
13 words
The device according to claim 52 wherein said device is a transmission type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2003-01-03 | 2003-07-05 | 2004-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-03 | 2007-07-05 | 2008-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-03 | 2011-07-05 | 2012-01-04 | $7700.00 | Window Closed / Lapsed |