US5712495A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device including active matrix circuit
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-03-10
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Granted: 1998-01-27
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Expires: 2017-03-10
Abstract
Abstract A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.
Inventors
- 👤 Hideomi Suzawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:44
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D86/441; H10D86/481; H10D86/60; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
200 words
A semiconductor device comprising: a substrate having an insulating surface; an active matrix circuit, having at least one first thin film transistor, formed on the insulating surface; and a peripheral circuit, having at least one second thin film transistor, formed on the insulating surface, for driving the active matrix circuit, wherein each of the first and second thin film transistors comprises source and drain regions, a channel region provided between the source and drain regions, a gate electrode formed over the active region, an insulating film comprising an oxide of the gate electrode formed on at least side surfaces thereof, and side insulators formed adjacent to only sides of the gate electrode with said insulating film interposed therebetween, and wherein the first thin film transistor further comprises offset regions formed below said side insulators without doped impurities between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and having the same conductivity as said channel region, and the second thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region.
Claim 2
Dependent Claim
200 words
A semiconductor device comprising: a substrate having an insulating surface; an active matrix circuit, having at least one first thin film transistor, formed on the insulating surface; and a peripheral circuit, having at least one second thin film transistor, formed on the insulating surface, for driving the active matrix circuit, wherein each of the first and second thin film transistors comprises source and drain regions, a channel region provided between the source and drain regions, a gate electrode formed over the active region, an insulating film comprising an oxide of the gate electrode formed on at least side surfaces thereof, and side insulators formed adjacent to only sides of the gate electrode with said insulating film interposed therebetween, and wherein the first thin film transistor further comprises offset regions formed below said side insulators without doped impurities between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and having the same conductivity as said channel region, and the second thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region.
Claim 3
Dependent Claim
43 words
The device of claim 1 wherein a concentration of an impurity included in the source and drain regions of the first thin film transistor is lower than that of an impurity included in the source and drain of the second thin film transistor.
Claim 4
Dependent Claim
17 words
The device of claim 1 wherein the peripheral circuit includes a source driver and a gate driver.
Claim 5
Dependent Claim
30 words
The device of claim 1 wherein the semiconductor device further comprises a liquid crystal cell, and the first thin film transistor is a switching element for the liquid crystal cell.
Claim 6
Dependent Claim
209 words
A semiconductor device comprising: a substrate having an insulating surface; and a plurality of thin film transistors formed on the insulating surface, wherein each of the thin film transistors comprises a source and a drain regions, a channel region provided between the source and the drain regions, a gate electrode formed over the channel region, an insulating film comprising an oxide of the gate electrode formed on at least side surfaces thereof, and side insulators formed adjacent to only sides of the gate electrode with the insulating film interposed therebetween, wherein at least one of the thin film transistors is provided as an active matrix circuit and at least another one of the thin film transistors is provided as a peripheral circuit for driving the active matrix circuit, and wherein the one of the thin film transistors further comprises offset regions formed below the side insulators between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and the same conductivity as the channel region, and the another one thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region.
Claim 7
Dependent Claim
209 words
A semiconductor device comprising: a substrate having an insulating surface; and a plurality of thin film transistors formed on the insulating surface, wherein each of the thin film transistors comprises a source and a drain regions, a channel region provided between the source and the drain regions, a gate electrode formed over the channel region, an insulating film comprising an oxide of the gate electrode formed on at least side surfaces thereof, and side insulators formed adjacent to only sides of the gate electrode with the insulating film interposed therebetween, wherein at least one of the thin film transistors is provided as an active matrix circuit and at least another one of the thin film transistors is provided as a peripheral circuit for driving the active matrix circuit, and wherein the one of the thin film transistors further comprises offset regions formed below the side insulators between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and the same conductivity as the channel region, and the another one thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region.
Claim 8
Dependent Claim
45 words
The device of claim 5 wherein a concentration of an impurity included in the source and drain regions of the one thin film transistor is lower than that of an impurity included in the source and drain regions of the another one thin film transistor.
Claim 9
Dependent Claim
17 words
The device of claim 5 wherein the peripheral circuit includes a source driver and a gate driver.
Claim 10
Dependent Claim
36 words
The device of claim 5 wherein the semiconductor device further comprises a liquid crystal cell, and the one thin film transistor provided as the active matrix circuit is a switching element for the liquid crystal cell.
Claim 11
Dependent Claim
209 words
An active matrix type liquid crystal display device comprising: a substrate having an insulating surface; a pixel circuit, having at least one first thin film transistor, formed on the insulating surface; a liquid crystal cell connected with the pixel circuit; and a peripheral circuit, having at least one second thin film transistor, formed on the insulating surface, for driving the pixel circuit, wherein each of the first and second thin film transistors comprises source and drain regions, a channel region provided between the source and drain regions, a gate electrode formed over the channel region, an insulating film comprising an oxide of the gate electrode formed on at least side surfaces thereof, and side insulators formed adjacent to only sides of the gate electrode with the insulating film interposed therebetween, and wherein the first thin film transistor further comprises offset regions formed below said side insulators between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and having the same conductivity as the channel region, and the second thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region.
Claim 12
Dependent Claim
209 words
An active matrix type liquid crystal display device comprising: a substrate having an insulating surface; a pixel circuit, having at least one first thin film transistor, formed on the insulating surface; a liquid crystal cell connected with the pixel circuit; and a peripheral circuit, having at least one second thin film transistor, formed on the insulating surface, for driving the pixel circuit, wherein each of the first and second thin film transistors comprises source and drain regions, a channel region provided between the source and drain regions, a gate electrode formed over the channel region, an insulating film comprising an oxide of the gate electrode formed on at least side surfaces thereof, and side insulators formed adjacent to only sides of the gate electrode with the insulating film interposed therebetween, and wherein the first thin film transistor further comprises offset regions formed below said side insulators between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and having the same conductivity as the channel region, and the second thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region.
Claim 13
Dependent Claim
14 words
The device of claim 9 wherein the pixel circuit has a plurality of pixels.
Claim 14
Dependent Claim
17 words
The device of claim 9 wherein the peripheral circuit includes a source driver and a gate driver.
Claim 15
Dependent Claim
316 words
An active matrix type liquid crystal display device comprising: a substrate having an insulating surface; a pixel circuit, having at least one first thin film transistor, formed on the insulating surface, wherein the first thin film transistor comprises first source and drain regions, a first channel region provided between the first source and drain regions, a first gate electrode formed over the first channel region, a first insulating film comprising an oxide of the first gate electrode formed on at least side surfaces thereof, and first side insulators formed adjacent to only sides of the gate electrode with the first insulating film interposed therebetween; a liquid crystal cell connected with the pixel circuit; and a peripheral circuit, having at least one second thin film transistor, formed on the insulating surface, for driving the pixel circuit, wherein the second thin film transistor comprises second source and drain regions, a second channel region provided between the second source and drain regions, a second gate electrode formed over the second channel region, a second insulating film comprising an oxide of the second gate electrode formed on at least side surfaces thereof, and second insulators formed adjacent to only sides of the second gate electrode with the second insulating film interposed therebetween, wherein the first thin film transistor further comprises offset regions formed below the side insulators between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and having the same conductivity as the channel region, and the second thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region, and wherein a concentration of an impurity included in the first source and drain regions is lower than that of an impurity included in the second source and drain regions.
Claim 16
Dependent Claim
316 words
An active matrix type liquid crystal display device comprising: a substrate having an insulating surface; a pixel circuit, having at least one first thin film transistor, formed on the insulating surface, wherein the first thin film transistor comprises first source and drain regions, a first channel region provided between the first source and drain regions, a first gate electrode formed over the first channel region, a first insulating film comprising an oxide of the first gate electrode formed on at least side surfaces thereof, and first side insulators formed adjacent to only sides of the gate electrode with the first insulating film interposed therebetween; a liquid crystal cell connected with the pixel circuit; and a peripheral circuit, having at least one second thin film transistor, formed on the insulating surface, for driving the pixel circuit, wherein the second thin film transistor comprises second source and drain regions, a second channel region provided between the second source and drain regions, a second gate electrode formed over the second channel region, a second insulating film comprising an oxide of the second gate electrode formed on at least side surfaces thereof, and second insulators formed adjacent to only sides of the second gate electrode with the second insulating film interposed therebetween, wherein the first thin film transistor further comprises offset regions formed below the side insulators between the source region and the channel region and between the channel region and the drain region, said offset region comprising the same material as and having the same conductivity as the channel region, and the second thin film transistor further comprises lightly doped regions formed between the source region and the channel region and between the channel region and the drain region, and wherein a concentration of an impurity included in the first source and drain regions is lower than that of an impurity included in the second source and drain regions.
Claim 17
Dependent Claim
14 words
The device of claim 12 wherein the pixel circuit has a plurality of pixels.
Claim 18
Dependent Claim
17 words
The device of claim 12 wherein the peripheral circuit includes a source driver and a gate driver.
References Cited (Backward Citations)
US3859716A
Cited
US4757026A
Cited
US4876213A
Cited
US5266823A
Cited
US5514879A
Cited
US5495121A
Cited
US5323042A
Cited
US5412240A
Cited
US5396084A
Cited
US5412493A
Cited
US5359219A
Cited
US5473184A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-26 | 2001-07-28 | 2002-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-26 | 2005-07-28 | 2006-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-26 | 2009-07-28 | 2010-01-27 | $7700.00 | Window Closed / Lapsed |