US5359219A
Expired / Lapsed
US
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Silicon on insulator device comprising improved substrate doping
Assignee: Texas Instruments Inc
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Filing: 1992-12-04
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Granted: 1994-10-25
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Expires: 2012-12-04
Abstract
Abstract A silicon on insulator integrated circuit device is provided which comprises a substrate (10), a buried oxide layer (12), and an outer silicon layer (14). A buried p-layer (16) and a buried n-well region (26) are formed in order to position p-n junctions beneath n-channel and p-channel devices respectively formed in the outer silicon layer (14) outwardly from the p-layer (16) and (n)-well (26).
Inventors
- 👤 Jeong-Mo Hwang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:39
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/201; Y; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
170 words
A silicon on insulator device, comprising: a silicon substrate having a predetermined conductivity type; an insulating layer disposed outwardly from and substantially completely covering said silicon substrate; an outer silicon layer disposed outwardly from said insulating layer and separated from said silicon substrate by said insulating layer; a first doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said first doped region comprising a conductivity type different than said predetermined conductivity type; a second doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said second doped region having said predetermined conductivity type, said second doped region separated from said silicon substrate by a portion of said first doped region; a first integrated circuit device disposed in a portion of said outer silicon layer disposed outwardly from said first doped region; and a second integrated circuit device disposed in a portion of said outer silicon layer disposed outwardly from said second doped region.
Claim 2
Dependent Claim
170 words
A silicon on insulator device, comprising: a silicon substrate having a predetermined conductivity type; an insulating layer disposed outwardly from and substantially completely covering said silicon substrate; an outer silicon layer disposed outwardly from said insulating layer and separated from said silicon substrate by said insulating layer; a first doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said first doped region comprising a conductivity type different than said predetermined conductivity type; a second doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said second doped region having said predetermined conductivity type, said second doped region separated from said silicon substrate by a portion of said first doped region; a first integrated circuit device disposed in a portion of said outer silicon layer disposed outwardly from said first doped region; and a second integrated circuit device disposed in a portion of said outer silicon layer disposed outwardly from said second doped region.
Claim 3
Dependent Claim
18 words
The silicon on insulator device of claim 1 wherein the predetermined conductivity type comprises an n conductivity type.
Claim 4
Dependent Claim
30 words
The silicon on insulator device of claim 2, wherein the first integrated circuit device is an n-channel MOS device, and the second integrated circuit device is a p-channel MOS device.
Claim 5
Dependent Claim
19 words
The silicon on insulator device of claim 1 wherein said insulating layer is 1,000 angstroms or larger in thickness.
Claim 6
Dependent Claim
20 words
The silicon on insulator device of claim 1 wherein the outer silicon layer is 2,000 angstroms or less in thickness.
Claim 7
Dependent Claim
22 words
The silicon on insulator device of claim 1 wherein the first doped region is on the order of 2,500 angstroms in depth.
Claim 8
Dependent Claim
22 words
The silicon on insulator device of claim 1 wherein the second doped region is on the order of 1,500 angstroms in depth.
Claim 9
Dependent Claim
127 words
A silicon on insulator device, comprising: a silicon substrate having a predetermined conductivity type; an insulating layer disposed outwardly from and substantially completely covering said silicon substrate; an outer silicon layer disposed outwardly from said insulating layer and separated from said silicon substrate by said insulating layer; a first doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said first doped region comprising a conductivity type different than said predetermined conductivity type; and a second doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said second doped region having said conductivity type, said second doped region separated from said silicon substrate by a portion of said first doped region.
Claim 10
Dependent Claim
127 words
A silicon on insulator device, comprising: a silicon substrate having a predetermined conductivity type; an insulating layer disposed outwardly from and substantially completely covering said silicon substrate; an outer silicon layer disposed outwardly from said insulating layer and separated from said silicon substrate by said insulating layer; a first doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said first doped region comprising a conductivity type different than said predetermined conductivity type; and a second doped region disposed proximate said insulating layer and separated from said outer silicon layer by said insulating layer, said second doped region having said conductivity type, said second doped region separated from said silicon substrate by a portion of said first doped region.
Claim 11
Dependent Claim
18 words
The silicon on insulator device of claim 8 wherein the predetermined conductivity type comprises an n conductivity type.
Claim 12
Dependent Claim
32 words
The silicon on insulating device of claim 9, said device further comprising a p-channel silicon device disposed in a portion of said outer silicon layer disposed outwardly from said second doped region.
Claim 13
Dependent Claim
19 words
The silicon on insulator device of claim 8 wherein said insulating layer is 1,000 angstroms or larger in thickness.
Claim 14
Dependent Claim
20 words
The silicon on insulator device of claim 8 wherein the outer silicon layer is 2,000 angstroms or less in thickness.
Claim 15
Dependent Claim
22 words
The silicon on insulator device of claim 8 wherein the first doped region is on the order of 2,500 angstroms in depth.
Claim 16
Dependent Claim
22 words
The silicon on insulator device of claim 8 wherein the second doped region is on the order of 1,500 angstroms in depth.
Claim 17
Dependent Claim
26 words
The silicon on insulator device of claim 8 wherein the first doped region comprises a concentration on the order of 10 16 ions per cubic centimeter.
Claim 18
Dependent Claim
26 words
The silicon on insulator device of claim 8 wherein the second doped region comprises a concentration on the order of 10 17 ions per cubic centimeter.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-10-24 | 1998-04-25 | 1998-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-10-24 | 2002-04-25 | 2002-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-10-24 | 2006-04-25 | 2006-10-25 | $7700.00 | Window Closed / Lapsed |