Semiconductor device having film for controlling diffusion of impurity

Claim 2

A semiconductor device comprising: a semiconductor body of a first conductivity type having a major surface; a source diffusion layer of a second conductivity type formed in the major surface of said semiconductor body; a drain diffusion layer of the second conductivity type formed in the major surface of said semiconductor body; an insulating layer formed on a channel region defined between said source and drain diffusion layers; a gate electrode formed on said insulating layer; a side wall insulating layer formed on a side surface of said gate electrode, a portion of said source diffusion layer and a portion of said drain diffusion layer; a film formed on respective portions of said source and drain diffusion layers for preventing oxygen enhanced diffusion in said source and drain diffusion layers; openings in said film, said openings exposing respective portions of said source and drain diffusion layers; and a wiring layer formed on said semiconductor body and contacting said respective exposed portions of said source and drain diffusion layers. wherein said source diffusion layer is formed to a greater depth under said side wall insulating layer than under said film, and said drain diffusion layer is formed to a greater depth under said side wall insulating layer than under said film.

Claim 3

The semiconductor device according to claim 1, wherein said source diffusion layer and said drain diffusion layer each contain an impurity whose diffusivity within said semiconductor body is affected by the presence of oxygen.

Claim 4

The semiconductor device according to claim 1, wherein said film is a nitride film.

Claim 5

The semiconductor device according to claim 2, wherein said impurity is boron.

Claim 6

The semiconductor device according to claim 1, wherein said side wall insulating layer is an oxide layer.

Claim 7

A semiconductor device comprising: a semiconductor body of a first conductivity type having a major surface; a semiconductor region of a second conductivity type formed in the major surface of said semiconductor body; a source diffusion layer of the second conductivity type formed in the major surface of said semiconductor body; a drain diffusion layer of the second conductivity type formed in the major surface of said semiconductor body; a source diffusion layer of the first conductivity type formed in a surface of said semiconductor region; a drain diffusion layer of the first conductivity type formed in the surface of said semiconductor region; an insulating layer formed on the channel regions respectively defined between said source and drain diffusion layers of the second conductivity type and between said source and drain diffusion layers of the first conductivity type; first and second gate electrodes respectively formed on said insulating layer between said source and drain diffusion layers of the second conductivity type and said source and drain diffusion layers of the first conductivity type; a first side wall insulating layer formed on a side surface of said second gate electrode, a portion of said source diffusion layer of the first conductivity type and a portion of said drain diffusion layer of the first conductivity type; a film formed on respective portions of said source and drain diffusion layers of the first conductivity type for preventing oxygen enhanced diffusion in said source and drain diffusion layers of the first conductivity type; openings in said film, said openings exposing respective portions of said source and drain diffusion layers of the first conductivity type; and a wiring layer formed on said semiconductor body and contacting said exposed portions of said source and drain diffusion layers of the first conductivity type; wherein said source diffusion layer of the first conductivity type is formed to a greater depth under said first side wall insulating layer than under said film, and said drain diffusion layer of the first conductivity type is formed to a greater depth under said first side wall insulating layer than under said film.

Claim 8

A semiconductor device comprising: a semiconductor body of a first conductivity type having a major surface; a semiconductor region of a second conductivity type formed in the major surface of said semiconductor body; a source diffusion layer of the second conductivity type formed in the major surface of said semiconductor body; a drain diffusion layer of the second conductivity type formed in the major surface of said semiconductor body; a source diffusion layer of the first conductivity type formed in a surface of said semiconductor region; a drain diffusion layer of the first conductivity type formed in the surface of said semiconductor region; an insulating layer formed on the channel regions respectively defined between said source and drain diffusion layers of the second conductivity type and between said source and drain diffusion layers of the first conductivity type; first and second gate electrodes respectively formed on said insulating layer between said source and drain diffusion layers of the second conductivity type and said source and drain diffusion layers of the first conductivity type; a first side wall insulating layer formed on a side surface of said second gate electrode, a portion of said source diffusion layer of the first conductivity type and a portion of said drain diffusion layer of the first conductivity type; a film formed on respective portions of said source and drain diffusion layers of the first conductivity type for preventing oxygen enhanced diffusion in said source and drain diffusion layers of the first conductivity type; openings in said film, said openings exposing respective portions of said source and drain diffusion layers of the first conductivity type; and a wiring layer formed on said semiconductor body and contacting said exposed portions of said source and drain diffusion layers of the first conductivity type; wherein said source diffusion layer of the first conductivity type is formed to a greater depth under said first side wall insulating layer than under said film, and said drain diffusion layer of the first conductivity type is formed to a greater depth under said first side wall insulating layer than under said film.

Claim 9

The semiconductor device according to claim 6, wherein said source diffusion layer of the first conductivity type and said drain diffusion layer of the first conductivity type each contain an impurity whose diffusivity within said semiconductor body is affected by the presence of oxygen.

Claim 10

The semiconductor device according to claim 6, wherein said film is a nitride film.

Claim 11

The semiconductor device according to claim 7, wherein said impurity is boron.

Claim 12

The semiconductor device according to claim 6, wherein said first side wall insulating layer is an oxide layer.

Claim 13

The semiconductor device according to claim 6, wherein said film is formed on respective portions of said source and drain diffusion layers of the second conductivity type for preventing oxygen-enhanced-diffusion in said source and drain diffusion layers of the second conductivity type.

Claim 14

The semiconductor device according to claim 6, further comprising a second side wall insulating layer formed on a side surface of said first gate electrode, a portion of said source diffusion layer of the second conductivity type and a portion of said drain diffusion layer of the second conductivity type.

Claim 15

The semiconductor device according to claim 12, wherein said second side wall insulating layer is an oxide layer.

Claim 16

A semiconductor device according to claim 1, wherein said source diffusion layer has a lower impurity concentration under said side wall insulating layer than under said film, and said drain diffusion layer has a lower impurity concentration under said side wall insulating layer than under said film.

Claim 17

A semiconductor device according to claim 1, wherein said first conductivity type is n-type and said second conductivity type is p-type.

Claim 18

A semiconductor device according to claim 6, wherein said source diffusion layer of the first conductivity type has a lower impurity concentration under said first side wall insulating layer than under said film, and said drain diffusion of the first conductivity type layer has a lower impurity concentration under said first side wall insulating layer than under said film.

Claim 19

A semiconductor device according to claim 6, wherein said first conductivity type is p-type and said second conductivity type is n-type.

Claim 20

A semiconductor device according to claim 11, wherein said source diffusion layer of the second conductivity type has a lower impurity concentration under said second side wall insulating layer than under said film, and said drain diffusion layer of the second conductivity type layer has a lower impurity concentration under said second side wall insulating layer than under said film.

Claim 21

A semiconductor device according to claim 11, wherein said film is a nitride film.

Claim 22

A semiconductor device comprising: a semiconductor body of a first conductivity type having a major surface; a source diffusion layer of a second conductivity type formed in the major surface of said semiconductor body, said source diffusion layer having first and second source diffusion portions; a drain diffusion layer of the second conductivity type formed in the major surface of said semiconductor body, said drain diffusion layer having first and second drain diffusion portions; a gate electrode insulatively spaced from a channel region between said source and drain diffusion layers; an insulating layer formed on a side wall of said gate electrode and on portions of said major surface above said first source diffusion portion and said first drain diffusion portion; a film formed on said major surface above said second source diffusion portion and said second drain diffusion portion for preventing oxygen enhanced diffusion in said source and drain diffusion layers; openings in said film exposing said second source diffusion portion and said second drain diffusion portion; and a wiring layer contacting said exposed second source diffusion portion and second drain diffusion portion wherein said first source diffusion portion is formed to a greater depth than said second source diffusion portion, and said first drain diffusion portion is formed to a greater depth than said second drain diffusion portion.

Claim 23

A semiconductor device comprising: a semiconductor body of a first conductivity type having a major surface; a source diffusion layer of a second conductivity type formed in the major surface of said semiconductor body, said source diffusion layer having first and second source diffusion portions; a drain diffusion layer of the second conductivity type formed in the major surface of said semiconductor body, said drain diffusion layer having first and second drain diffusion portions; a gate electrode insulatively spaced from a channel region between said source and drain diffusion layers; an insulating layer formed on a side wall of said gate electrode and on portions of said major surface above said first source diffusion portion and said first drain diffusion portion; a film formed on said major surface above said second source diffusion portion and said second drain diffusion portion for preventing oxygen enhanced diffusion in said source and drain diffusion layers; openings in said film exposing said second source diffusion portion and said second drain diffusion portion; and a wiring layer contacting said exposed second source diffusion portion and second drain diffusion portion wherein said first source diffusion portion is formed to a greater depth than said second source diffusion portion, and said first drain diffusion portion is formed to a greater depth than said second drain diffusion portion.