US4937645A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and a method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1988-03-16
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Granted: 1990-06-26
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Expires: 2008-03-16
Abstract
Abstract A semiconductor device comprising n-channel MISFETs and p-channel MISFETs each having a gate electrode having side walls selectively provided with side wall insulating films, and a method of manufacturing such a semiconductor device. The side wall insulating films covering the side walls of the gate electrodes of the MISFETs are formed by etching a single insulating film, formed simultaneously over all the MISFETs in a single processing step. The length of the side wall insulating films of the gate electrode of the n-channel MISFET, along the direction of channel length, is about 0.3 μm or above. The length of the side wall insulating films of the gate electrode of the p-channel MISFET, along the direction of channel length, is smaller than the length of the side wall insulating films of the n-channel MISFET.
Inventors
- 👤 Fumio Ootsuka
- 👤 Osamu Tsuchiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 09:24
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0167; H10D84/017; H10D84/0181; H10D84/0184; H10D84/0191; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/24
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
368 words
A semiconductor device comprising: (a) a semiconductor substrate having a first portion of a first conductivity type and a second portion of a second conductivity type, opposite the first conductivity type, each of the first and second portions extending to a surface of the semiconductor substrate; and (b) MISFETs formed in the semiconductor substrate, each MISFET having a gate electrode, the gate electrode having opposed side walls, with a channel region formed beneath the gate electrode, side wall insulating films formed over the opposed side walls of the gate electrode, and semiconductor regions serving as source and drain regions of the MISFETs formed in the semiconductor substrate, the MISFETs including a first group and a second group of MISFETs, the first group of MISFETs being formed in said first portion and the second group of MISFETs being formed in the second portion; wherein one of the first and second groups comprises a p-channel MISFET, and the other of the first and second groups comprises a n-channel MISFET, the semiconductor regions serving as source and drain regions of the p-channel MISFET each being of a p-type comprising a first region spaced apart from the channel region of the p-channel MISFET and a second region formed between the channel region of the p-channel MISFET and the first region, the semiconductor regions serving as source and drain regions of the n-channel MISFET each being of an n-type comprising a third region spaced apart from the channel region of the n-channel MISFET and a fourth region formed between the channel region of the n-channel MISFET and the third region, the second and fourth regions respectively having lower impurity concentrations than said first and third regions, wherein the length of the side wall insulating films of the p-channel MISFET along the direction of channel length is smaller than the length of the side wall insulating films of the n-channel MISFET along the direction of channel length, and wherein the second region is smaller in the direction of channel length than the fourth region, so that the series resistance of the source and drain regions of the p-channel MISFET is reduced while maintaining pressure resistance between source and drain regions of the n-channel MISFET.
Claim 2
Dependent Claim
368 words
A semiconductor device comprising: (a) a semiconductor substrate having a first portion of a first conductivity type and a second portion of a second conductivity type, opposite the first conductivity type, each of the first and second portions extending to a surface of the semiconductor substrate; and (b) MISFETs formed in the semiconductor substrate, each MISFET having a gate electrode, the gate electrode having opposed side walls, with a channel region formed beneath the gate electrode, side wall insulating films formed over the opposed side walls of the gate electrode, and semiconductor regions serving as source and drain regions of the MISFETs formed in the semiconductor substrate, the MISFETs including a first group and a second group of MISFETs, the first group of MISFETs being formed in said first portion and the second group of MISFETs being formed in the second portion; wherein one of the first and second groups comprises a p-channel MISFET, and the other of the first and second groups comprises a n-channel MISFET, the semiconductor regions serving as source and drain regions of the p-channel MISFET each being of a p-type comprising a first region spaced apart from the channel region of the p-channel MISFET and a second region formed between the channel region of the p-channel MISFET and the first region, the semiconductor regions serving as source and drain regions of the n-channel MISFET each being of an n-type comprising a third region spaced apart from the channel region of the n-channel MISFET and a fourth region formed between the channel region of the n-channel MISFET and the third region, the second and fourth regions respectively having lower impurity concentrations than said first and third regions, wherein the length of the side wall insulating films of the p-channel MISFET along the direction of channel length is smaller than the length of the side wall insulating films of the n-channel MISFET along the direction of channel length, and wherein the second region is smaller in the direction of channel length than the fourth region, so that the series resistance of the source and drain regions of the p-channel MISFET is reduced while maintaining pressure resistance between source and drain regions of the n-channel MISFET.
Claim 3
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein the side wall insulating films of each of the n-channel MISFET and the p-channel MISFET are formed of a same insulating material layer.
Claim 4
Dependent Claim
74 words
A semiconductor device according to claim 1, wherein the device further includes a memory cell comprising a MISFET, the MISFET of the memory cell having a gate electrode, the gate electrode having opposed side walls, with a channel region formed under the gate electrode, side wall insulating films formed over the opposed side walls of the gate electrode, and a semiconductor region serving as a source or drain region formed in the semiconductor substrate.
Claim 5
Dependent Claim
55 words
A semiconductor device according to claim 3, wherein the semiconductor region of the MISFET of the memory cell comprises a fifth region spaced apart from the channel region of the MISFET of the memory cell, and a sixth region formed between the channel region of the MISFET of the memory cell and the fifth region.
Claim 6
Dependent Claim
25 words
A semiconductor device according to claim 3, wherein said memory cell comprises a series circuit of said MISFET of the memory cell and a capacitor.
Claim 7
Dependent Claim
26 words
A semiconductor device according to claim 5, wherein said capacitor includes a conductive layer extending above the gate electrode of the MISFET of the memory cell.
Claim 8
Dependent Claim
91 words
A semiconductor device according to claim 1, wherein said second region is in self-alignment with the gate electrode of the p-channel MISFET and said first region is in self-alignment with the side wall insulating films of the p-channel MISFET; and wherein said fourth region is in self-alignment with the gate electrode of the n-channel MISFET and the third region is in self-alignment with the side wall insulating films of the n-channel MISFET, whereby the second region is provided to be smaller in the direction of channel length, than the fourth region.
Claim 9
Dependent Claim
42 words
A semiconductor device according to claim 1, wherein said second portion is a well region formed in the semiconductor substrate extending to said surface, and said MISFETs of the second group are formed in said well region formed in said semiconductor substrate.
Claim 10
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein the second region, of said p-type MISFET, has a depth from a substrate surface that is smaller than the depth of said first region.
Claim 11
Dependent Claim
32 words
A semiconductor device according to claim 1, wherein the fourth region, of said n-channel MISFET, has a depth from a substrate surface that is smaller than the depth of said third region.
Claim 12
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein the length of the side wall insulating films of said n-channel MISFET, along the direction of channel length, is at least about 0.3 μm .
Claim 13
Dependent Claim
33 words
A semiconductor device according to claim 11, wherein the length of the side wall insulating films of said p-channel MISFET, along the direction of channel length, is at most about 0.3 μm .
Claim 14
Dependent Claim
33 words
A semiconductor device according to claim 1, wherein the length of the side wall insulating films of said p-channel MISFET, along the direction of channel length, is at most about 0.3 μm .
Claim 15
Dependent Claim
36 words
A semiconductor device according to claim 1, wherein the second portion is a well region provided in the semiconductor substrate, said well region being of n-conductivity type, the p-channel MISFET being formed in said well region.
Claim 16
Dependent Claim
39 words
A semiconductor device according to claim 14, wherein the first portion is another well region provided in the semiconductor substrate, said another well region being of a p-conductivity type, the n-channel MISFET being formed in said another well region.
Claim 17
Dependent Claim
33 words
A semiconductor device according to claim 11, wherein the length of the side wall insulating films of said p-channel MISFET, along the direction of channel length, is 0.1 μm to 0.25 μm .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-06-25 | 1993-12-25 | 1994-06-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-25 | 1997-12-25 | 1998-06-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-25 | 2001-12-25 | 2002-06-26 | $7700.00 | Window Closed / Lapsed |