US5438477A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Die-attach technique for flip-chip style mounting of semiconductor dies
Assignee: LSI Corp
•
Filing: 1993-08-12
•
Granted: 1995-08-01
•
Expires: 2013-08-12
Abstract
Abstract A technique for forming bump bonded semiconductor device assemblies is described wherein a die attach structure is disposed between a semiconductor die and a substrate. Bump bonds (conductive bump contacts) are formed between the die and the substrate, outside of the periphery of the die attach structure. The die attach structure has a "rippled" or egg-crate shaped shape or texture characterized by alternating positive and negative peaks. The die is attached (e.g., by an adhesive) to the positive peaks, and the substrate is attached to the negative peaks. The die attach has the effect of anchoring the die to the substrate and absorbing mechanical shocks which would otherwise be transmitted to the conductive bump contacts. This serves to improve the shock resistance of the chip/substrate assembly. The die attach structure can be made to match the coefficient of expansion of the bump bonds as well as that of the die.
Inventors
- 👤 Nicholas F. Pasch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:46
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/073; H10W72/072; H10W72/30; H10W72/07231; H10W72/07236; H10W72/07331; H10W72/07337; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/353; H10W72/354; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/4935
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
146 words
A semiconductor device assembly comprising: a semiconductor die having a first thermal coefficient of expansion; a substrate having a second thermal coefficient of expansion; conductive bump contacts between a surface of the semiconductor die and a surface of the substrate in a pre-defined pattern such that the surface of the die and the surface of the substrate are substantially parallel to one another and are facing one another; and a die attach structure disposed between the surface of the die and the surface of the substrate, said die attach structure formed from a sheet of material having a shape characterized by alternating positive and negative peaks and sized to fit within an area defined by the conductive bump contacts, the substrate being attached to the negative peaks of the die attach structure and the die being attached to the positive peaks of the die attach structure.
Claim 2
Dependent Claim
146 words
A semiconductor device assembly comprising: a semiconductor die having a first thermal coefficient of expansion; a substrate having a second thermal coefficient of expansion; conductive bump contacts between a surface of the semiconductor die and a surface of the substrate in a pre-defined pattern such that the surface of the die and the surface of the substrate are substantially parallel to one another and are facing one another; and a die attach structure disposed between the surface of the die and the surface of the substrate, said die attach structure formed from a sheet of material having a shape characterized by alternating positive and negative peaks and sized to fit within an area defined by the conductive bump contacts, the substrate being attached to the negative peaks of the die attach structure and the die being attached to the positive peaks of the die attach structure.
Claim 3
Dependent Claim
16 words
A semiconductor device assembly according to claim 1, wherein: the shape is a sinusoidal travelling-S shape.
Claim 4
Dependent Claim
16 words
A semiconductor device assembly according to claim 1, wherein: the shape is a triangular sawtooth shape.
Claim 5
Dependent Claim
27 words
A semiconductor device assembly according to claim 1, wherein: the shape is a three-dimensional "egg-crate" shape characterized by rows and columns of alternating positive and negative peaks.
Claim 6
Dependent Claim
63 words
A semiconductor device assembly according to claim 4, wherein: the conductive bump contacts have a third thermal coefficient of expansion; and the material and shape of the die attach structure are chosen such that a fourth thermal coefficient of expansion of the die attach structure in a direction perpendicular to the surface of the substrate closely matches the third thermal coefficient of expansion.
Claim 7
Dependent Claim
89 words
A semiconductor device assembly according to claim 4, wherein: the conductive bump contacts have a third thermal coefficient of expansion; and the material and shape of the die attach structure are chosen such that a fourth thermal coefficient of expansion of the die attach structure in a direction perpendicular to the surface of the substrate and a fifth thermal coefficient of expansion of the die attach structure in a direction parallel to the surface of the semiconductor die closely match the first and third thermal coefficients of expansion, respectively.
Claim 8
Dependent Claim
24 words
A semiconductor device assembly according to claim 1, wherein: the third thermal coefficient of expansion is greater than the first thermal coefficient of expansion.
Claim 9
Dependent Claim
31 words
A semiconductor device assembly according to claim 1, wherein: the die attach structure has "channels" between the positive and negative peaks through which cooling gas or fluid can be directed therethrough.
Claim 10
Dependent Claim
63 words
A semiconductor device assembly according to claim 1, wherein: the conductive bump contacts have a third thermal coefficient of expansion; the material and shape of the die attach structure are chosen such that a thermal coefficient of expansion of the die attach structure in a direction perpendicular to the substrate closely matches the third thermal coefficient of expansion of the conductive bump contacts.
Claim 11
Independent Claim
152 words
A method of making a semiconductor device assembly, comprising the steps of: providing a semiconductor die having a first thermal coefficient of expansion; providing a substrate having a second thermal coefficient of expansion; forming conductive bump contacts between a surface of the semiconductor die and a surface of the substrate in a pre-defined pattern such that the surface of the die and the surface of the substrate are substantially parallel to one another and are facing one another; disposing a die attach structure between the surface of the die and the surface of the substrate, said die attach structure being formed from a sheet of material sized to fit within the pattern of conductive bump contacts, and having a rippled shape characterized by alternating positive peaks and negative peaks; attaching the substrate to the negative peaks of the die attach; and attaching the die to the positive peaks of the die attach.
Claim 12
Independent Claim
152 words
A method of making a semiconductor device assembly, comprising the steps of: providing a semiconductor die having a first thermal coefficient of expansion; providing a substrate having a second thermal coefficient of expansion; forming conductive bump contacts between a surface of the semiconductor die and a surface of the substrate in a pre-defined pattern such that the surface of the die and the surface of the substrate are substantially parallel to one another and are facing one another; disposing a die attach structure between the surface of the die and the surface of the substrate, said die attach structure being formed from a sheet of material sized to fit within the pattern of conductive bump contacts, and having a rippled shape characterized by alternating positive peaks and negative peaks; attaching the substrate to the negative peaks of the die attach; and attaching the die to the positive peaks of the die attach.
Claim 13
Dependent Claim
14 words
A method according to claim 10, wherein: the shape is a sinusoidal travelling-S shape.
Claim 14
Dependent Claim
14 words
A method according to claim 10, wherein: the shape is a triangular sawtooth shape.
Claim 15
Dependent Claim
25 words
A method according to claim 10, wherein: the shape is a three-dimensional "egg-crate" shape characterized by rows and columns of alternating positive and negative peaks.
Claim 16
Dependent Claim
61 words
A method according to claim 13, wherein: the conductive bump contacts have a third thermal coefficient of expansion; and the material and shape of the die attach structure are chosen such that a fourth thermal coefficient of expansion of the die attach structure in a direction perpendicular to the surface of the substrate closely matches the third thermal coefficient of expansion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-07-31 | 1999-01-30 | 1999-08-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-07-31 | 2003-01-30 | 2003-08-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-07-31 | 2007-01-30 | 2007-08-01 | $7700.00 | Window Closed / Lapsed |