US4190855A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Installation of a semiconductor chip on a glass substrate
Assignee: Sharp Corp
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Filing: 1977-08-10
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Granted: 1980-02-26
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Expires: 1997-08-10
Abstract
Abstract A flipchip LSI is mounted on a glass substrate through the use of bonding techniques. An insulating layer made of, for example, epoxy resin is formed between the LSI chip and the glass substrate in such a manner that the insulating layer is fixed to both of the LSI chip and the glass substrate. The insulating layer functions to absorb strain caused by differences of the coefficient of thermal expansion of the LSI chip and the glass substrate, thereby securing stable operation of the LSI chip.
Inventors
- 👤 Yukihiro Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 13:46
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/01; H10W74/012; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/692; H10W72/00; H10W72/30; H10W74/10; H10W74/15; H10W72/851; H10W72/853; H10W72/856; H10W74/131; H10W74/142; H10W90/00; H10W90/701; H10W90/721; H10W90/724; H10W90/731; H10W90/734
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
185 words
A semiconductor device comprising: (a) a flipchip integrated circuit device having a specific coefficient of thermal expansion; (b) a mechanical supporting substrate which has a coefficient of thermal expansion substantially different from that of said flipchip and bears a low mechanical resistance against thermal expansion; (c) a wiring pattern deposited on said supporting substrate; (d) a bonding member for bounding said flipchip integrated circuit device and said substrate, said flipchip integrated circuit device being mechanically supported by the bonding member; and (e) an insulating resin layer deposited in such a manner so as to cover at least a junction between said flipchip integrated circuit device and said bonding member and a junction between said substrate and said bonding member, said insulating resin layer having a coefficient of thermal expansion sufficient to absorb mechanical strain caused by the differences in the coefficient of thermal expansion between said flipchip integrated circuit and said substrate, thereby ensuring the mechanical tightness of the junctions between said flipchip integrated circuit device and said bonding member and between said substrate and said bonding member against a substantial amount of thermal expansion.
Claim 2
Dependent Claim
185 words
A semiconductor device comprising: (a) a flipchip integrated circuit device having a specific coefficient of thermal expansion; (b) a mechanical supporting substrate which has a coefficient of thermal expansion substantially different from that of said flipchip and bears a low mechanical resistance against thermal expansion; (c) a wiring pattern deposited on said supporting substrate; (d) a bonding member for bounding said flipchip integrated circuit device and said substrate, said flipchip integrated circuit device being mechanically supported by the bonding member; and (e) an insulating resin layer deposited in such a manner so as to cover at least a junction between said flipchip integrated circuit device and said bonding member and a junction between said substrate and said bonding member, said insulating resin layer having a coefficient of thermal expansion sufficient to absorb mechanical strain caused by the differences in the coefficient of thermal expansion between said flipchip integrated circuit and said substrate, thereby ensuring the mechanical tightness of the junctions between said flipchip integrated circuit device and said bonding member and between said substrate and said bonding member against a substantial amount of thermal expansion.
Claim 3
Dependent Claim
39 words
The semiconductor device of claim 1 wherein said supporting substrate has a coefficient of thermal expansion of about 80 to 100×10 -7/ °C. and said flipchip integrated circuit has a coefficient of thermal expansion of about 30×10 -7/ °C.
Claim 4
Dependent Claim
37 words
The semiconductor device of claim 1 wherein the substrate is a glass substrate, and the insulating layer is a resin selected from the group consisting of an epoxy resin, a silicone resin and a photocuring acryl resin.
Claim 5
Dependent Claim
13 words
The semiconductor device of claim 1, wherein said substrate is a glass substrate.
Claim 6
Dependent Claim
12 words
The semiconductor device of claim 1, wherein said resin is epoxy resin.
Claim 7
Dependent Claim
14 words
The semiconductor device of claim 1, wherein said resin is photo curing acryl resin.
Claim 8
Dependent Claim
12 words
The semiconductor device of claim 1, wherein said resin is silicone resin.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-02-25 | 1983-08-27 | 1984-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-02-25 | 1987-08-27 | 1988-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-02-25 | 1991-08-27 | 1992-02-26 | $7700.00 | Window Closed / Lapsed |