Patent US6846516B2 successfully refreshed from Google Patents.
US6846516B2
Expired / Lapsed
US
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Multiple precursor cyclical deposition system
Assignee: Applied Materials Inc
•
Filing: 2002-04-08
•
Granted: 2005-01-25
•
Expires: 2022-04-08
Abstract
Abstract Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WB x Si y ), titanium silicon nitride (TiSi x N y ), tantalum silicon nitride (TaSi x N y ), silicon oxynitride (SiO x N y ), and hafnium silicon oxide (HfSi x O y ). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.
Inventors
- 👤 Michael Xi Yang
- 👤 Hyungsuk Alexander Yoon
- 👤 Hui Zhang
- 👤 Hongbin Fang
- 👤 Ming Xi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45544; C23C16/45527; C23C16/45531; C23C16/45561
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
111 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising WB x Si y , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor at least partially overlap.
Claim 2
Independent Claim
111 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising WB x Si y , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a pulse of a second precursor; and introducing a pulse of a third precursor, wherein the pulse of the second precursor and the pulse of the third precursor at least partially overlap.
Claim 3
Dependent Claim
29 words
The method of claim 1 , wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.
Claim 4
Dependent Claim
35 words
The method of claim 2 , wherein the tungsten precursor comprises tungsten hexafluoride (WF 6 ), the borane precursor comprises diborane (B 2 H 6 ), and the silicon precursor comprises silane (SiH 4 ).
Claim 5
Dependent Claim
22 words
The method of claim 1 , further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
Claim 6
Independent Claim
110 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising HfSi x O y wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0, the at least one cycle comprising: introducing a pulse of a hafnium precursor, introducing a pulse of a silicon precursor; and introducing a pulse of an oxygen precursor, wherein the pulse of the silicon precursor and the pulse of the oxygen precursor at least partially overlap.
Claim 7
Independent Claim
110 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising HfSi x O y wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0, the at least one cycle comprising: introducing a pulse of a hafnium precursor, introducing a pulse of a silicon precursor; and introducing a pulse of an oxygen precursor, wherein the pulse of the silicon precursor and the pulse of the oxygen precursor at least partially overlap.
Claim 8
Dependent Claim
22 words
The method of claim 5 , further comprising changing the flow ratio of the silicon precursor to the oxygen precursor between cycles.
Claim 9
Independent Claim
116 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising WB x Si y , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a first pulse of a purge gas; introducing a pulse of a second precursor; introducing a pulse of a third precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas.
Claim 10
Independent Claim
116 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising WB x Si y , wherein WB x Si y comprises tungsten to borane to silicon in a ratio in which X is between about 0.0 and about 0.35 and Y is between about 0.0 and about 0.20, the at least one cycle comprising: introducing a pulse of a first precursor; introducing a first pulse of a purge gas; introducing a pulse of a second precursor; introducing a pulse of a third precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas.
Claim 11
Dependent Claim
29 words
The method of claim 7 , wherein the first precursor is a tungsten precursor, the second precursor is a borane precursor, and the third precursor is a silicon precursor.
Claim 12
Dependent Claim
29 words
The method of claim 7 , wherein the first pulse of the purge gas and the second pulse of the purge comprise a continuous flow of the purge gas.
Claim 13
Dependent Claim
28 words
The method of claim 7 , wherein the first pulse of the purge gas and the second pulse of the purge comprise separate flows of the purge gas.
Claim 14
Dependent Claim
22 words
The method of claim 7 , further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
Claim 15
Independent Claim
116 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising HfSi x O y , wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0, the at least one cycle comprising: introducing a pulse of a hafnium precursor; introducing a first pulse of a purge gas; introducing a pulse of a silicon precursor; introducing a pulse of an oxygen precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas.
Claim 16
Independent Claim
116 words
A method of depositing a ternary material layer over a substrate structure comprising: providing at least one cycle of gases to deposit a ternary material layer comprising HfSi x O y , wherein HfSi x O y comprises hafnium to silicon to oxygen in a ratio in which X is between about 0.0 and about 0.5 and Y is between about 0.0 and about 1.0, the at least one cycle comprising: introducing a pulse of a hafnium precursor; introducing a first pulse of a purge gas; introducing a pulse of a silicon precursor; introducing a pulse of an oxygen precursor without a pulse of a purge gas; and introducing a second pulse of the purge gas.
Claim 17
Dependent Claim
29 words
The method of claim 12 , wherein the first pulse of the purge gas and the second pulse of the purge comprise a continuous flow of the purge gas.
Claim 18
Dependent Claim
28 words
The method of claim 12 , wherein the first pulse of the purge gas and the second pulse of the purge comprise separate flows of the purge gas.
Claim 19
Dependent Claim
22 words
The method of claim 12 , further comprising changing the flow ratio of the second precursor to the third precursor between cycles.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-01-25 | 2008-07-26 | 2009-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-01-25 | 2012-07-26 | 2013-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-01-25 | 2016-07-26 | 2017-01-25 | $7700.00 | Window Closed / Lapsed |