Patent US6538330B1 successfully refreshed from Google Patents.
US6538330B1
Expired / Lapsed
US
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Multilevel semiconductor-on-insulator structures and circuits
Assignee: Micron Technology Inc
•
Filing: 2000-03-23
•
Granted: 2003-03-25
•
Expires: 2020-03-23
Abstract
Abstract Some advanced integrated circuits are fabricated as silicon-on-insulator structures, which facilitate faster operating speeds, closer component spacing, lower power consumption, and so forth. Unfortunately, current bonded-wafer techniques for making such structures are costly because they waste silicon. Accordingly, one embodiment of the invention provides a smart-bond technique that allows repeated use of a silicon wafer to produce hundreds and potentially thousands of silicon-on-insulator structures, not just one or two as do conventional methods. More precisely, the smart bond technique entails bonding selected first and second regions of a silicon substrate to an insulative substrate and then separating the two substrates to leave silicon protrusions or islands on the insulative substrate. The technique is also suitable to forming three-dimensional integrated circuits, that is, circuits having two or more circuit layers.
Inventors
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:42
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
55 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the insulative surface and each protrusion separated from an adjacent protrusion by an open space.
Claim 2
Dependent Claim
55 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the insulative surface and each protrusion separated from an adjacent protrusion by an open space.
Claim 3
Dependent Claim
13 words
The integrated circuit assembly of claim 1 , wherein the protrusions are noncontiguous.
Claim 4
Dependent Claim
38 words
The integrated circuit assembly of claim 1 , wherein each of the protrusions further comprises a base portion which is more narrow than the top portion in a dimension parallel to a major surface of the insulative layer.
Claim 5
Dependent Claim
33 words
The integrated circuit assembly of claim 1 , wherein the top portion of each of the protrusions has a rectangular cross-section in a plane parallel to a major surface of the insulative layer.
Claim 6
Dependent Claim
78 words
The integrated circuit assembly of claim 1 : wherein each of the protrusions further comprises a base portion which is more narrow than the top portion in a dimension parallel to a major surface of the insulative layer; and wherein the top portion has a substantially rectangular cross-section in a first plane parallel to a major surface of the insulative layer and the bottom portion has a non-rectangular cross-section in a second plane parallel to the first plane.
Claim 7
Dependent Claim
17 words
The integrated circuit assembly of claim 1 , wherein the protrusions are integral with the semiconductive structure.
Claim 8
Dependent Claim
37 words
The integrated circuit assembly of claim 1 , wherein each protrusion is integral with the semiconductive structure and its top portion has length and width dimensions less than those of a lowest portion of the semiconductive structure.
Claim 9
Dependent Claim
70 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the insulative surface and a lower portion having a width less than that of the top portion, and with each protrusion separated from an adjacent protrusion by an open space.
Claim 10
Dependent Claim
70 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the insulative surface and a lower portion having a width less than that of the top portion, and with each protrusion separated from an adjacent protrusion by an open space.
Claim 11
Dependent Claim
21 words
The integrated circuit assembly of claim 8 , wherein the semiconductive structure consists essentially of gallium-arsenic, germanium, silicon carbide, or silicon.
Claim 12
Dependent Claim
13 words
The integrated circuit assembly of claim 8 , wherein the protrusions are noncontiguous.
Claim 13
Dependent Claim
53 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the insulative surface and a lower portion having a thermally activatable cleavage plane.
Claim 14
Dependent Claim
53 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the insulative surface and a lower portion having a thermally activatable cleavage plane.
Claim 15
Dependent Claim
21 words
The integrated circuit assembly of claim 11 , wherein the semiconductive structure consists essentially of gallium-arsenic, germanium, silicon carbide, or silicon.
Claim 16
Dependent Claim
13 words
The integrated circuit assembly of claim 11 , wherein the protrusions are noncontiguous.
Claim 17
Dependent Claim
18 words
The integrated circuit assembly of claim 11 , wherein the thermally activatable cleavage plane comprises implanted hydrogen ions.
Claim 18
Dependent Claim
78 words
The integrated circuit assembly of claim 11 : wherein each of the protrusions further comprises a base portion which is more narrow than the top portion in a dimension parallel to a major surface of the insulative layer; and wherein the top portion has a substantially rectangular cross-section in a first plane parallel to a major surface of the insulative layer and the bottom portion has a non-rectangular cross-section in a second plane parallel to the first plane.
Claim 19
Dependent Claim
79 words
An integrated circuit assembly comprising: a first insulative structure having a surface; two or more transistors on the surface of the first insulative structure; at least one first conductor electrically coupling two or more of the transistors; a second insulative structure overlying the one first conductor and having a surface; and a semiconductor structure having two or more protrusions, with each of the protrusions contacting the surface of the second insulative structure and having a thermally activatable cleavage plane.
Claim 20
Dependent Claim
79 words
An integrated circuit assembly comprising: a first insulative structure having a surface; two or more transistors on the surface of the first insulative structure; at least one first conductor electrically coupling two or more of the transistors; a second insulative structure overlying the one first conductor and having a surface; and a semiconductor structure having two or more protrusions, with each of the protrusions contacting the surface of the second insulative structure and having a thermally activatable cleavage plane.
Claim 21
Dependent Claim
21 words
The integrated circuit assembly of claim 16 , wherein the semiconductive structure consists essentially of gallium-arsenic, germanium, silicon carbide, or silicon.
Claim 22
Dependent Claim
13 words
The integrated circuit assembly of claim 16 , wherein the protrusions are noncontiguous.
Claim 23
Dependent Claim
18 words
The integrated circuit assembly of claim 14 , wherein the thermally activatable cleavage plane comprises implanted hydrogen ions.
Claim 24
Dependent Claim
78 words
The integrated circuit assembly of claim 16 : wherein each of the protrusions further comprises a base portion which is more narrow than the top portion in a dimension parallel to a major surface of the insulative layer; and wherein the top portion has a substantially rectangular cross-section in a first plane parallel to a major surface of the insulative layer and the bottom portion has a non-rectangular cross-section in a second plane parallel to the first plane.
Claim 25
Dependent Claim
88 words
An integrated circuit assembly comprising: a first insulative structure having a surface; two or more transistors on the surface of the first insulative structure; at least one first conductor electrically coupling two or more of the transistors; a second insulative structure overlying the one first conductor and having a surface; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the surface of the second insulative structure and each protrusion separated from an adjacent protrusion by an open space.
Claim 26
Dependent Claim
88 words
An integrated circuit assembly comprising: a first insulative structure having a surface; two or more transistors on the surface of the first insulative structure; at least one first conductor electrically coupling two or more of the transistors; a second insulative structure overlying the one first conductor and having a surface; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top portion contacting the surface of the second insulative structure and each protrusion separated from an adjacent protrusion by an open space.
Claim 27
Dependent Claim
21 words
The integrated circuit assembly of claim 21 , wherein the semiconductive structure consists essentially of gallium-arsenic, germanium, silicon carbide, or silicon.
Claim 28
Dependent Claim
17 words
The integrated circuit assembly of claim 21 , wherein each insulative structure consists essentially of silicon dioxide.
Claim 29
Dependent Claim
13 words
The integrated circuit assembly of claim 21 , wherein the protrusions are noncontiguous.
Claim 30
Dependent Claim
78 words
The integrated circuit assembly of claim 21 : wherein each of the protrusions further comprises a base portion which is more narrow than the top portion in a dimension parallel to a major surface of the insulative layer; and wherein the top portion has a substantially rectangular cross-section in a first plane parallel to a major surface of the insulative layer and the bottom portion has a non-rectangular cross-section in a second plane parallel to the first plane.
Claim 31
Dependent Claim
18 words
The integrated circuit assembly of claim 21 , wherein each of the protrusions comprises drain and source regions.
Claim 32
Dependent Claim
85 words
An integrated circuit assembly comprising: a first insulative structure having a surface; two or more transistors on the surface of the first insulative structure; at least one first conductor electrically coupling two or more of the transistors; a second insulative structure overlying the one first conductor and having a surface; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top surface contacting the surface of the second insulative structure and a portion having a thermally activatable cleavage plane.
Claim 33
Dependent Claim
85 words
An integrated circuit assembly comprising: a first insulative structure having a surface; two or more transistors on the surface of the first insulative structure; at least one first conductor electrically coupling two or more of the transistors; a second insulative structure overlying the one first conductor and having a surface; and a semiconductor structure having two or more protrusions, with each of the protrusions having a top surface contacting the surface of the second insulative structure and a portion having a thermally activatable cleavage plane.
Claim 34
Dependent Claim
21 words
The integrated circuit assembly of claim 27 , wherein the semiconductive structure consists essentially of gallium-arsenic, germanium, silicon carbide, or silicon.
Claim 35
Dependent Claim
17 words
The integrated circuit assembly of claim 27 , wherein each insulative structure consists essentially of silicon dioxide.
Claim 36
Dependent Claim
13 words
The integrated circuit assembly of claim 27 , wherein the protrusions are noncontiguous.
Claim 37
Dependent Claim
78 words
The integrated circuit assembly of claim 27 : wherein each of the protrusions further comprises a base portion which is more narrow than the top portion in a dimension parallel to a major surface of the insulative layer; and wherein the top portion has a substantially rectangular cross-section in a first plane parallel to a major surface of the insulative layer and the bottom portion has a non-rectangular cross-section in a second plane parallel to the first plane.
Claim 38
Dependent Claim
18 words
The integrated circuit assembly of claim 27 , wherein the thermally activatable cleavage plane comprises implanted hydrogen ions.
Claim 39
Dependent Claim
83 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and one or more semiconductive structures on the insulative layer, with the insulative layer between the semiconductive structures and the two or more transistors, wherein each of the semiconductive structures comprises a wide portion contacting the insulative layer and a narrow portion extending from the wide portion and each semiconductive structure is separated from an adjacent semiconductive structure by an open space.
Claim 40
Dependent Claim
83 words
An integrated circuit assembly comprising: two or more interconnected transistors; an insulative layer overlying and contacting the two or more transistors; and one or more semiconductive structures on the insulative layer, with the insulative layer between the semiconductive structures and the two or more transistors, wherein each of the semiconductive structures comprises a wide portion contacting the insulative layer and a narrow portion extending from the wide portion and each semiconductive structure is separated from an adjacent semiconductive structure by an open space.
Claim 41
Dependent Claim
24 words
The integrated-circuit assembly of claim 33 , wherein one or more of the semiconductive structures consists essentially of gallium-arsenic, germanium, silicon carbide, or silicon.
Claim 42
Dependent Claim
16 words
The integrated-circuit assembly of claim 33 , wherein the insulative layer consist essentially of silicon dioxide.
Claim 43
Dependent Claim
28 words
The integrated circuit assembly of claim 33 , wherein the wide portion has a rectangular cross-section in a plane parallel to a major surface of the insulative layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-03-24 | 2006-09-23 | 2007-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-03-24 | 2010-09-23 | 2011-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-03-24 | 2014-09-23 | 2015-03-25 | $7700.00 | Window Closed / Lapsed |