US5710057A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI fabrication method
Assignee: Individual
•
Filing: 1996-07-12
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Granted: 1998-01-20
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Expires: 2016-07-12
Abstract
Abstract A first region of a seed substrate is separated from a bonded handle substrate by etching and/or fracturing a second region of the seed substrate. A third region of the seed substrate remains bonded to the handle wafer. Etching and etch ant distribution are facilitated by capillary action in trenches formed in the seed substrate prior to bonding of the handle substrate. A portion of the second region may be removed by undercut etching prior to handle bonding. Elevated pressure and etchant composition are used to suppress bubble formation during etching. Alternatively, pressure from bubble formation is used to fracture a portion of the second region. First, second, and third regions are defined by a variety of methods.
Inventors
- 👤 Donald M. Kenney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:32
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P95/00; H10P95/11; H10W; H10W10/00; H10W10/10; H10W10/181; H10P72/00; H10P72/70; H10P72/74; H10P72/7432; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
56 words
A method of forming a bonded structure comprising the steps of: (a) providing a seed substrate having first, second, and third regions; (b) forming a groove in said seed substrate; (c) bonding a handle substrate to said third region; (d) removing and/or fracturing said second region, whereby said first region is detached from the third region.
Claim 2
Independent Claim
56 words
A method of forming a bonded structure comprising the steps of: (a) providing a seed substrate having first, second, and third regions; (b) forming a groove in said seed substrate; (c) bonding a handle substrate to said third region; (d) removing and/or fracturing said second region, whereby said first region is detached from the third region.
Claim 3
Dependent Claim
14 words
The method of claim 1 in which said groove extends into the second region.
Claim 4
Dependent Claim
14 words
The method of claim 2 in which said groove extends into the first region.
Claim 5
Dependent Claim
26 words
The method of claim 1 in which a portion of said second region is removed so as to undercut said third region prior to step (c).
Claim 6
Dependent Claim
18 words
The method of claim 1 further including use of the detached first region as a new seed substrate.
Claim 7
Dependent Claim
13 words
The method of claim 1 including etching the second region at elevated pressure.
Claim 8
Dependent Claim
21 words
The method of claim 1 in which a first sidewall spacer is used to define the thickness of the third region.
Claim 9
Dependent Claim
21 words
The method of claim 7 in which a second sidewall spacer is used to define the thickness of the second region.
Claim 10
Independent Claim
59 words
A method of forming a bonded semiconductor on semiconductor structure comprising the steps of: (a) providing a seed substrate having first, second, and third regions; (b) forming a groove in said seed substrate; (c) bonding a handle substrate to said third region; (d) removing and/or fracturing said second region, whereby said first region is detached from the third region.
Claim 11
Independent Claim
59 words
A method of forming a bonded semiconductor on semiconductor structure comprising the steps of: (a) providing a seed substrate having first, second, and third regions; (b) forming a groove in said seed substrate; (c) bonding a handle substrate to said third region; (d) removing and/or fracturing said second region, whereby said first region is detached from the third region.
Claim 12
Dependent Claim
14 words
The method of claim 9 in which said groove extends into the second region.
Claim 13
Dependent Claim
14 words
The method of claim 10 in which said groove extends into the first region.
Claim 14
Dependent Claim
26 words
The method of claim 9 in which a portion of said second region is removed so as to undercut said third region prior to step (c).
Claim 15
Dependent Claim
18 words
The method of claim 9 further including use of the detached first region as a new seed substrate.
Claim 16
Dependent Claim
13 words
The method of claim 9 including etching the second region at elevated pressure.
Claim 17
Independent Claim
59 words
A method of forming a bonded semiconductor on insulator structure comprising the steps of: (a) providing a seed substrate having first, second, and third regions; (b) forming a groove in said seed substrate; (c) bonding a handle substrate to said third region; (d) removing and/or fracturing said second region, whereby said first region is detached from the third region.
Claim 18
Independent Claim
59 words
A method of forming a bonded semiconductor on insulator structure comprising the steps of: (a) providing a seed substrate having first, second, and third regions; (b) forming a groove in said seed substrate; (c) bonding a handle substrate to said third region; (d) removing and/or fracturing said second region, whereby said first region is detached from the third region.
Claim 19
Dependent Claim
14 words
The method of claim 15 in which said groove extends into the second region.
Claim 20
Dependent Claim
14 words
The method of claim 16 in which said groove extends into the first region.
Claim 21
Dependent Claim
26 words
The method of claim 15 in which a portion of said second region is removed so as to undercut said third region prior to step (c).
Claim 22
Dependent Claim
18 words
The method of claim 15 further including use of the detached first region as a new seed substrate.
Claim 23
Dependent Claim
13 words
The method of claim 15 including etching the second region at elevated pressure.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-19 | 2001-07-21 | 2002-01-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-19 | 2005-07-21 | 2006-01-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-19 | 2009-07-21 | 2010-01-20 | $7700.00 | Window Closed / Lapsed |