US5362682A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing sheets of crystalline material and devices made therefrom
Assignee: Massachusetts Institute of Technology
•
Filing: 1993-03-15
•
Granted: 1994-11-08
•
Expires: 2013-03-15
Abstract
Abstract A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.
Inventors
- 👤 Carl O. Bozler
- 👤 John C.C. Fan
- 👤 Robert W. McClelland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:20
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/142; C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; C30B29/00; C30B29/60; C30B33/00; H10F19/00; H10F19/40; H10F71/00; H10F71/121; H10F71/127; H10F71/136; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H01; H01S; H01S2304/00; H01S2304/12; H01S5/00; H01S5/02; H01S5/0206; H01S5/0207; H01S5/0217; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02E10/547; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S117/00; Y10S117/913; Y10S117/915; Y10S148/00; Y10S148/023; Y10S148/103; Y10S148/105
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
108 words
A method of producing an integrated circuit device in a single crystal semiconductor material comprising: forming a thin-film of single crystal semiconductor material over an insulating layer and a first substrate; attaching a second substrate to a surface of the thin-film; separating the thin-film from the first substrate to provide an exposed surface under the thin film and the second substrate; attaching the thin-film and the second substrate to a third substrate on the exposed surface; and separating the thin-film and the third substrate from the second substrate, the thin-film having an integrated circuit device formed therein that is attached to the third substrate with an adhesive layer.
Claim 2
Independent Claim
108 words
A method of producing an integrated circuit device in a single crystal semiconductor material comprising: forming a thin-film of single crystal semiconductor material over an insulating layer and a first substrate; attaching a second substrate to a surface of the thin-film; separating the thin-film from the first substrate to provide an exposed surface under the thin film and the second substrate; attaching the thin-film and the second substrate to a third substrate on the exposed surface; and separating the thin-film and the third substrate from the second substrate, the thin-film having an integrated circuit device formed therein that is attached to the third substrate with an adhesive layer.
Claim 3
Dependent Claim
14 words
The method of claim 1 wherein the third substrate comprises an optically transmitting material.
Claim 4
Dependent Claim
10 words
The method of claim 1 wherein the thin-film comprises silicon.
Claim 5
Independent Claim
123 words
A method of producing an integrated circuit device in a single crystal silicon material comprising: forming a thin-film of single crystal silicon material over a silicon dioxide layer and a first substrate; attaching a second substrate to a surface of the single crystal silicon material with an adhesive; separating the single crystal silicon material from the first substrate to provide an exposed surface under the single crystal silicon material and the second substrate; attaching the single crystal silicon thin-film and the second substrate to a third substrate on the exposed surface with an adhesive; and separating the single crystal silicon material and the third substrate from the second substrate, the thin-film of single crystal silicon material having an integrated circuit device formed therein.
Claim 6
Independent Claim
123 words
A method of producing an integrated circuit device in a single crystal silicon material comprising: forming a thin-film of single crystal silicon material over a silicon dioxide layer and a first substrate; attaching a second substrate to a surface of the single crystal silicon material with an adhesive; separating the single crystal silicon material from the first substrate to provide an exposed surface under the single crystal silicon material and the second substrate; attaching the single crystal silicon thin-film and the second substrate to a third substrate on the exposed surface with an adhesive; and separating the single crystal silicon material and the third substrate from the second substrate, the thin-film of single crystal silicon material having an integrated circuit device formed therein.
Claim 7
Dependent Claim
24 words
The method of claim 4 wherein the step of attaching a third substrate further comprises attaching an optically transmitting substrate to the exposed surface.
Claim 8
Independent Claim
106 words
A method of producing an integrated circuit device in a single crystal silicon material comprising: forming a thin-film of single crystal silicon material over a silicon dioxide layer and a first substrate; attaching a second substrate to a surface of the silicon thin-film with an adhesive; separating the silicon thin-film and silicon dioxide layer from the first substrate to provide an exposed surface; attaching the silicon thin-film and the second substrate to a third substrate on the exposed surface with an adhesive; and separating the single crystal silicon material and the third substrate from the second substrate, the thin-film having an integrated circuit device formed therein.
Claim 9
Independent Claim
106 words
A method of producing an integrated circuit device in a single crystal silicon material comprising: forming a thin-film of single crystal silicon material over a silicon dioxide layer and a first substrate; attaching a second substrate to a surface of the silicon thin-film with an adhesive; separating the silicon thin-film and silicon dioxide layer from the first substrate to provide an exposed surface; attaching the silicon thin-film and the second substrate to a third substrate on the exposed surface with an adhesive; and separating the single crystal silicon material and the third substrate from the second substrate, the thin-film having an integrated circuit device formed therein.
References Cited (Backward Citations)
DE1047911B
Cited
DE1029941B
Cited
US2992903A
Cited
US3112997A
Cited
US3031275A
Cited
US3133336A
Cited
US3341376A
Cited
US3172778A
Cited
GB958852A
Cited
DE1289831B
Cited
US3186880A
Cited
US3247576A
Cited
US3290181A
Cited
US3370980A
Cited
US3336159A
Cited
US3372069A
Cited
US3425879A
Cited
US3816906A
Cited
US3634150A
Cited
US3884733A
Cited
US4046618A
Cited
US3900943A
Cited
US3911559A
Cited
US4053350A
Cited
US4116751A
Cited
US4027053A
Cited
US4168998A
Cited
US4381201A
Cited
US4445965A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |