US5376575A
Expired / Lapsed
US
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Method of making dynamic random access memory having a vertical transistor
Assignee: SK Hynix Inc
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Filing: 1992-09-24
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Granted: 1994-12-27
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Expires: 2012-09-24
Abstract
Abstract A DRAM having a vertical transistor of a highly integrated semiconductor device and its manufacturing method are disclosed. A DRAM has a silicon substrate, a word line formed in a silicon substrate, a gate oxide layer formed on the side wall of the word line, a bit line junction region formed on the bottom of a silicon substrate, a bit line that is connected to the a bit line junction region and is insulated from the word line via a first insulating layer, a charge storage electrode junction region formed near the bottom of silicon substrate surface, a pad polysilicon layer that is insulated from the a word line via a second insulating layer and is connected at the top of a charge storage electrode diffusion region, and a charge storage electrode that is connected to the pad polysilicon layer through a contact. Accordingly, a channel region is formed on a silicon substrate positioned on the side wall of a word line by applying the voltage to the word line and thus a signal transmitter is mutually transferred from the bit line to the charge storage electrode.
Inventors
- 👤 Jong S. Kim
- 👤 Hee-Koo Yoon
- 👤 Chung G. Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:19
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/39; H10B12/395; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/05; H10B12/053; H10B12/34; H10B12/37; H10B12/377; H10B12/48; H10B12/482
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
481 words
A method of manufacturing a dynamic random access memory having a vertical transistor, comprising the steps of: providing a silicon substrate having a planar substrate surface; forming a first trench mask on said substrate surface, said first trench mask comprising a pair of sections extending in the same direction from an edge of said substrate surface, said sections of said first trench mask being separated by a portion of said substrate surface constituting a trench portion; etching said trench portion to form a first trench; forming an insulating layer in said first trench; anisotropically etching the insulating layer to form an insulating layer spacer on an interior side wall of said first trench; etching an interior bottom of said first trench to form a second trench; implanting ions on an interior bottom portion and a side wall of said second trench to form a bit line junction region; filling said first and second trenches with a bit line conducting layer; etching back said bit line conducting layer to form a bit line in said second trench below said first trench; forming a first oxide layer on said bit line, first trench, and substrate surface; forming a word line mask on said substrate surface on one side of said first trench, said word line mask comprising a pair of sections extending in the same direction from one side wall of said first trench, said sections of said word line mask being separated by a portion of said substrate surface constituting a slot portion; etching said slot portion and first oxide layer thereon to form a slot intersecting said first trench; etching said first oxide layer on an interior bottom of said slot to an interior bottom of said first trench to form a first insulating layer; removing said word line mask from said substrate surface; forming a gate oxide layer on an interior side wall of said first trench and slot; filling a word line conducting layer in said first trench; etching back said word line conducting layer to an elevation below said substrate surface to form a word line; forming a second insulating layer on said word line, said second insulating layer being below said substrate surface; forming an electrode contact on said second insulating layer, said electrode contact comprising a pad polysilicon on said second insulating layer and charge storage electrode junction region adjoining sides of said pad polysilicon and second insulating layer, said charge storage electrode junction region being formed by ion-implantation; depositing a second oxide layer on said pad polysilicon and substrate surface; forming a charge storage electrode contact mask on a portion of said second oxide layer, said contact mask enclosing another portion of said second oxide layer formed on said pad polysilicon; etching said another portion of said second oxide layer to form a contact hole; and forming a charge storage electrode in said contact hole.
Claim 2
Independent Claim
481 words
A method of manufacturing a dynamic random access memory having a vertical transistor, comprising the steps of: providing a silicon substrate having a planar substrate surface; forming a first trench mask on said substrate surface, said first trench mask comprising a pair of sections extending in the same direction from an edge of said substrate surface, said sections of said first trench mask being separated by a portion of said substrate surface constituting a trench portion; etching said trench portion to form a first trench; forming an insulating layer in said first trench; anisotropically etching the insulating layer to form an insulating layer spacer on an interior side wall of said first trench; etching an interior bottom of said first trench to form a second trench; implanting ions on an interior bottom portion and a side wall of said second trench to form a bit line junction region; filling said first and second trenches with a bit line conducting layer; etching back said bit line conducting layer to form a bit line in said second trench below said first trench; forming a first oxide layer on said bit line, first trench, and substrate surface; forming a word line mask on said substrate surface on one side of said first trench, said word line mask comprising a pair of sections extending in the same direction from one side wall of said first trench, said sections of said word line mask being separated by a portion of said substrate surface constituting a slot portion; etching said slot portion and first oxide layer thereon to form a slot intersecting said first trench; etching said first oxide layer on an interior bottom of said slot to an interior bottom of said first trench to form a first insulating layer; removing said word line mask from said substrate surface; forming a gate oxide layer on an interior side wall of said first trench and slot; filling a word line conducting layer in said first trench; etching back said word line conducting layer to an elevation below said substrate surface to form a word line; forming a second insulating layer on said word line, said second insulating layer being below said substrate surface; forming an electrode contact on said second insulating layer, said electrode contact comprising a pad polysilicon on said second insulating layer and charge storage electrode junction region adjoining sides of said pad polysilicon and second insulating layer, said charge storage electrode junction region being formed by ion-implantation; depositing a second oxide layer on said pad polysilicon and substrate surface; forming a charge storage electrode contact mask on a portion of said second oxide layer, said contact mask enclosing another portion of said second oxide layer formed on said pad polysilicon; etching said another portion of said second oxide layer to form a contact hole; and forming a charge storage electrode in said contact hole.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said pad polysilicon is formed on said second insulating layer before forming said charge storage electrode junction region.
Claim 4
Dependent Claim
16 words
The method according to claim 1, wherein said bit line conducting layer is formed of polysilicon.
Claim 5
Dependent Claim
27 words
The method of claim 1, wherein said charge storage electrode junction region is formed by diffusing an impurity contained in said pad polysilicon to said silicon substrate.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein said charge storage electrode junction region is formed before forming said pad polysilicon on said second insulating layer.
Claim 7
Dependent Claim
44 words
The method of claim 5, wherein said charge storage electrode junction region is formed by diffusing an impurity, via said slot, to a portion of said silicon substrate containing adjoining portions of said substrate surface and said interior side wall of said first trench.
Claim 8
Dependent Claim
19 words
The method of claim 1, wherein said bit line junction region is used as a source of the transistor.
Claim 9
Dependent Claim
20 words
The method of claim 1, wherein said charge storage electrode junction region is used as a drain of the transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |